International Rectifier IRFPS43N50K Datasheet
PD- 93922B
SMPS MOSFET
IRFPS43N50K
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Low R
DS(on)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 47
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A
I
DM
PD @TC = 25°C Power Dissipation 540 W
V
GS
T
J
T
STG
Pulsed Drain Current 190
Linear Derating Factor 4.3 W/°C
Gate-to-Source Voltage ± 30 V
dv/dtPeak Diode Recovery dv/dt 9.0 V/ns
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case )
V
DSS
R
DS(on)
typ. I
500V 0.078Ω 47A
Super-247™
D
°C
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 910 mJ
Avalanche Current ––– 47 A
Repetitive Avalanche Energy ––– 54 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.23
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
www.irf.com 1
04/03/01
IRFPS43N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 440 ––– VGS = 0V, VDS = 0V to 400V
oss
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.078 0.090 Ω VGS = 10V, ID = 28A
Gate Threshold Voltage 3. 0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
––– ––– 50 µA V
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 125°C
nA
= 500V, VGS = 0V
DS
VGS = -30V
Forward Transconductance 23 ––– ––– SVDS = 50V, ID = 28A
Total Gate Charge ––– ––– 350 ID = 47A
Gate-to-Source Charge ––– ––– 85 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 180 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 25 ––– VDD = 250V
Rise Time ––– 140 ––– ID = 47A
Turn-Off Delay Time ––– 55 ––– RG = 1.0Ω
ns
Fall Time ––– 74 ––– VGS = 10V,See Fig. 10
Input Capacitance ––– 8310 ––– VGS = 0V
Output Capacitance ––– 960 ––– VDS = 25V
Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 10170 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 240 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
47
190
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 47A, VGS = 0V
Reverse Recovery Time ––– 620 940 ns TJ = 25°C, IF = 47A
Reverse RecoveryCharge ––– 14 21 µC di/dt = 100A/µs
Reverse RecoveryCurrent ––– 38 ––– A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. (See Fig. 11)
C
eff. is a fixed capacitance that gives the same charging time
Starting T
I
AS
I
SD
= 25°C, L = 0.82mH, RG = 25Ω,
J
= 47A (See Figure 12a).
≤ 47A, di/dt ≤ 230A/µs, V
DD
≤ V
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
.
TJ ≤ 150°C.
2 www.irf.com
IRFPS43N50K
1000
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
1000
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
I =
D
48A
3.0
100
10
1
D
I , Drain-to-Source Current (A)
0.1
4 5 6 7 8 9 10 11 12
Fig 3. Typical Transfer Characteristics
°
T = 150 C
J
°
T = 25 C
J
V = 50V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
V =
Fig 4. Normalized On-Resistance
GS
10V
°
Vs. Temperature
www.irf.com 3
Loading...