International Rectifier IRFPS3815 Datasheet
PD - 93911
IRFPS3815
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
V
= 150V
DSS
R
S
DS(on)
I
D
= 0.015Ω
= 105A
Description
The HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
Super-247™
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 105
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A
I
DM
PD @TC = 25°C Power Dissipation 441 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
T
J
T
STG
Pulsed Drain Current 390
Linear Derating Factor 2.9 W/°C
Gate-to-Source Voltage ± 30 V
Single Pulse Avalanche Energy 1610 mJ
Avalanche Current 58 A
Repetitive Avalanche Energy 38 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.34
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
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IRFPS3815
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 1270 ––– VGS = 0V, VDS = 0V to 120V
oss
Drain-to-Source Breakdown Voltage 150 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.015 Ω VGS = 10V, ID = 63A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = 10V, ID = 250µA
Forward Transconductance 47 ––– ––– SVDS = 50V, ID = 58A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
µA
nA
= 100V, VGS = 0V
V
DS
VGS = -30V
Total Gate Charge ––– 260 390 ID = 58A
Gate-to-Source Charge ––– 53 80 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– 150 230 VGS = 10V
Turn-On Delay Time ––– 22 ––– VDD = 75V
Rise Time ––– 130 ––– ID = 58A
Turn-Off Delay Time ––– 51 ––– RG = 1.03Ω
ns
Fall Time ––– 60 ––– VGS = 10V
5.0
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 6810 ––– VGS = 0V
Output Capacitance ––– 1570 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 9820 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 670 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
105
390
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V
Reverse Recovery Time ––– 270 410 ns TJ = 25°C, IF = 58A
Reverse RecoveryCharge ––– 2990 4490 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 0.96mH
J
= 58A. (See Figure 12)
AS
≤ 58A, di/dt ≤ 450A/µs, V
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
,
oss
while V
is rising from 0 to 80% V
DS
DSS
TJ ≤ 175°C
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D
S
IRFPS3815
1000
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM
5.0V
5.0V
50µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM
5.0V
5.0V
10
D
I , Drain-to-Source Current (A)
50µs PULSE WIDTH
°
T = 175 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
97A
2.5
°
T = 175 C
J
100
°
T = 25 C
J
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
5 6 7 8 9 10 11 12
V , Gate-to-Source Voltage (V)
GS
50µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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