International Rectifier IRFPS37N50A Datasheet
PD- 91822C
SMPS MOSFET
IRFPS37N50A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High Speed Power Switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN
1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
I
DM
PD @TC = 25°C Power Dissipation 446 W
V
GS
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
T
J
T
STG
Pulsed Drain Current 144
Linear Derating Factor 3.6 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
V
DSS
R
DS(on)
max I
500V 0.13Ω 36A
SUPER-247
D
°C
Typical SMPS Topologies
l Full Bridge Converters
l Power Factor Correction Boost
Notes through are on page 8
www.irf.com 1
12/14/99
IRFPS37N50A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 400 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
2 www.irf.com
Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance ––– ––– 0.13 Ω VGS = 10V, ID = 22A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 20 ––– ––– S VDS = 50V, ID = 22A
Total Gate Charge ––– ––– 180 ID = 36A
Gate-to-Source Charge ––– ––– 46 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 71 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 23 –– – VDD = 250V
Rise Time ––– 98 – –– ID = 36A
Turn-Off Delay Time ––– 52 – –– RG = 2.15Ω
ns
Fall Time ––– 80 ––– RD = 7.0Ω,See Fig. 10
Input Capacitance ––– 5579 ––– VGS = 0V
Output Capacitance ––– 810 ––– VDS = 25V
Reverse Transfer Capacitance ––– 36 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 7905 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 221 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 1260 mJ
Avalanche Current ––– 36 A
Repetitive Avalanche Energy ––– 44 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.28
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V
Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 36A
Reverse RecoveryCharge ––– 8.6 13 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
36
144
showing the
A
p-n junction diode.
G
D
S
IRFPS37N50A
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 150 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
36A
2.5
100
°
T = 150 C
J
°
T = 25 C
10
D
I , Drain-to-Source Current (A)
1
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
J
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
www.irf.com 3
Loading...