International Rectifier IRFPC50A Datasheet

TO-247AC

PD- 91898

SMPS MOSFET

IRFPC50A

HEXFET® Power MOSFET

Applications

l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss specified ( See AN 1001)

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A
I

DM

PD @TC = 25°C Power Dissipation 180 W

V

GS

dv/dt Peak Diode Recovery dv/dt  4.9 V/ns
T

J

T

STG

Pulsed Drain Current  44

Linear Derating Factor 1.4 W/°C
Gate-to-Source Voltage ± 30 V

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

V

DSS

Rds(on) max I

600V 0.58Ω 11A

SDG

D

°C

Typical SMPS Topology:

l PFC Boost

Notes  through  are on page 8

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6/23/99

IRFPC50A

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 81 ––– VGS = 0V, VDS = 0V to 480V 

oss

Avalanche Characteristics

E

AS

I

AR

E

AR

Thermal Resistance

R

θJC

R

θCS

R

θJA

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

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Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

––– 0.65 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.58 Ω VGS = 10V, ID = 6.0A 
Gate Threshold Voltage 2.0 ––– 4. 0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 600V, VGS = 0V

µA

nA

VGS = -30V

Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 7.7 ––– ––– S VDS = 50V, ID = 6.0A
Total Gate Charge ––– ––– 70 ID = 11A
Gate-to-Source Charge ––– ––– 19 nC VDS = 480V
Gate-to-Drain ("Miller") Charge ––– ––– 28 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 15 ––– VDD = 300V
Rise Time ––– 40 ––– ID = 11A
Turn-Off Delay Time ––– 33 ––– RG = 6.2Ω

ns

Fall Time ––– 29 ––– RD = 30Ω,See Fig. 10 
Input Capacitance ––– 2100 ––– VGS = 0V
Output Capacitance ––– 270 ––– VDS = 25V
Reverse Transfer Capacitance ––– 9.7 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 2830 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 74 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz

Parameter Typ. Max. Units

Single Pulse Avalanche Energy ––– 920 mJ
Avalanche Current ––– 11 A
Repetitive Avalanche Energy ––– 18 mJ

Parameter Typ. Max. Units

Junction-to-Case ––– 0.65
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– 1.4 V TJ = 25°C, IS = 11A, VGS = 0V 
Reverse Recovery Time ––– 500 740 ns TJ = 25°C, IF = 11A
Reverse RecoveryCharge ––– 4.0 6 .0 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

11

44

showing the

A

p-n junction diode.



G

D

S

IRFPC50A

100

10

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

1

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

100

J

100

10

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 150 C

1

1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

I =

D

11A

13A

2.5

°

T = 150 C

J

10

°

T = 25 C

J

D

I , Drain-to-Source Current (A)

100V

V = 50V

DS

1

4.0 5.0 6.0 7.0 8.0 9.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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