International Rectifier IRFP460AS Datasheet
PD-94011A
SMPS MOSFET
Applications
l SMPS, UPS, Welding and High Speed
Power Switching
Benefits
Dynamic dv/dt Rating
l
l Repetitive Avalanche Rated
l Isolated Central Mounting Hole
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
l Solder plated and leadformed for surface mounting
Description
Third Generation HEXFET®s from International Rectifier provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also provides
greater creepage distance between pins to meet the requirements of
most safety specifications.
V
DSS
500V 0.27Ω 20A
IRFP460AS
HEXFET® Power MOSFET
Rds(on) max I
SMD-247
D
This plated and leadformed version of the TO-247 package allows
the package to be surface mounted in an application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
I
DM
PD @TC = 25°C Power Dissipation 280 W
V
GS
dv/dt Peak Diode Recovery dv/dt 3.8 V/ns
T
J
T
STG
Maximum Reflow Temperature 230 (Time above 183 °C
should not exceed 100s) °C
Pulsed Drain Current 80
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range °C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Typical SMPS Topologies:
l Full Bridge
l PFC Boost
Notes through are on page 8
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01/17/01
IRFP460AS
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 140 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.61 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.27 Ω VGS = 10V, ID = 12A
Gate Threshold Voltage 2. 0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
= 30V
GS
nA
V
= -30V
GS
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 11 ––– ––– SVDS = 50V, ID = 12A
Total Gate Charge ––– ––– 105 ID = 20A
Gate-to-Source Charge ––– ––– 26 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 42 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 18 ––– VDD = 250V
Rise Time ––– 55 ––– ID = 20A
Turn-Off Delay Time ––– 45 ––– RG = 4.3Ω
ns
Fall Time ––– 39 ––– RD = 13Ω, See Fig. 10
Input Capacitance ––– 3100 ––– VGS = 0V
Output Capacitance ––– 480 ––– VDS = 25V
Reverse Transfer Capacitance ––– 18 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 4430 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 130 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 960 mJ
Avalanche Current ––– 20 A
Repetitive Avalanche Energy ––– 28 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V
Reverse Recovery Time ––– 480 710 ns TJ = 25°C, IF = 20A
Reverse RecoveryCharge ––– 5.0 7.5 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
20
80
showing the
A
p-n junction diode.
G
D
S
IRFP460AS
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
D
I , Drain-to-Source Current (A)
1
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
°
T = 150 C
J
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
20A
19A
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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