International Rectifier IRFP450N Datasheet
PD- 94216
SMPS MOSFET
IRFP450N
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.8 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 56
Linear Derating Factor 1.6 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
Rds(on) max I
500V 0.37Ω 14A
TO-247AC
D
°C
Typical SMPS Topologies
l Two transistor Forward
l Half Bridge and Full Bridge
l PFC Boost
Notes through are on page 8
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1/17/02
IRFP450N
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 110 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.59 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.37 Ω VGS = 10V, ID = 8.4A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
= 30V
GS
nA
V
= -30V
GS
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 7.9 ––– ––– SVDS = 50V, ID = 8.4A
Total Gate Charge ––– ––– 77 ID = 14A
Gate-to-Source Charge ––– ––– 26 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 34 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 20 ––– VDD = 250V
Rise Time ––– 63 ––– ID = 14A
Turn-Off Delay Time ––– 29 ––– RG = 6.2Ω
ns
Fall Time ––– 25 ––– VGS = 10V,See Fig. 10
Input Capacitance ––– 2260 ––– VGS = 0V
Output Capacitance ––– 210 ––– VDS = 25V
Reverse Transfer Capacitance ––– 14 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 2410 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 59 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 170 mJ
Avalanche Current ––– 14 A
Repetitive Avalanche Energy ––– 20 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.4 V TJ = 25°C, IS = 14A, VGS = 0V
Reverse Recovery Time ––– 430 650 ns TJ = 25°C, IF = 14A
Reverse RecoveryCharge ––– 3.7 5 . 6 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
14
56
showing the
A
p-n junction diode.
G
D
S
IRFP450N
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM
6.0V
6.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
6.0V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
1
1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
14A
°
T = 150 C
J
10
°
T = 25 C
1
D
I , Drain-to-Source Current (A)
0.1
6.0 7.0 8.0 9.0 10.0
J
V = 50V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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