International Rectifier IRFP4110PBF Datasheet

)

S

D

G

PD - 97311

IRFP4110PbF

Applications

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

Benefits

l Improved Gate, Avalanche and Dynamic dv/dt

V

DSS

R

DS(on

typ.

max. I

D (Silicon Limited

I

D (Package Limited

HEXFET® Power MOSFET

100V

3.7m

4.5m

180A

120A

Ruggedness

l Fully Characterized Capacitance and Avalanche

D

SOA

l Enhanced body diode dV/dt and dI/dt Capability

TO-247AC

GDS

Gate Drain Source

Absolute Maximum Ratings

Symbol Parameter Units

ID @ TC = 25°C

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

D

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

I

D

I

DM

@TC = 25°C

P

D

V

GS

dv/dt T

J

T

STG

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

d

f

Max.

c

180

c

130

120

670

370

2.5

± 20

5.3

-55 to + 175

300

10lbxin (1.1Nxm)

: :

c

D

G

A

W

W/°C

V

V/ns

°C

S

Avalanche Characteristics

g

e

190

108

37

mJ

A

mJ

E

AS (Thermally limited)

I

AR

E

AR

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

d

Thermal Resistance

Symbol Parameter Typ. Max. Units

JC

CS

JA

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

k

j

––– 0.402

0.24 ––– °C/W

––– 40

03/03/08

R

θ

R

θ

R

θ

www.irf.com 1

IRFP4110PbF

/

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 160 ––– ––– S Q

g

Q

gs

Q

gd

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

eff. (ER)

oss

C

eff. (TR)

oss

Drain-to-Source Breakdown Voltage 100 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.108 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 3.7 4.5

Gate Threshold Voltage 2.0 ––– 4.0 V

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 150 210 nC

Gate-to-Source Charge ––– 35 –––

Gate-to-Drain ("Miller") Charge ––– 43 –––

Gate Resistance

–––

1.3 ––– Turn-On Delay Time ––– 25 ––– ns

Rise Time ––– 67 –––

Turn-Off Delay Time ––– 78 –––

Fall Time ––– 88 –––

Input Capacitance ––– 9620 ––– pF

Output Capacitance ––– 670 –––

Reverse Transfer Capacitance ––– 250 –––

––– 820 –––

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

i

––– 950 –––

h

mΩ

VGS = 0V, ID = 250µA

Reference to 25°C, I

= 10V, ID = 75A

V

GS

V

= VGS, ID = 250µA

DS

= 100V, VGS = 0V

V

DS

V

= 100V, VGS = 0V, TJ = 125°C

DS

= 20V

V

GS

V

= -20V

GS

VDS = 50V, ID = 75A

I

= 75A

D

V

= 50V

DS

= 10V

V

GS

Ω

V

= 65V

DD

= 75A

I

D

R

= 2.6Ω

G

VGS = 10V

V

= 0V

GS

V

= 50V

DS

ƒ = 1.0MHz

V

= 0V, VDS = 0V to 80V

GS

V

= 0V, VDS = 0V to 80V

GS

Conditions

g

= 5mA

D

g

d

i

h

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

I

RRM

t

on

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 120A. Note that current

limitations arising from heating of the device leads may occur with some lead mounting arrangements.

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 25Ω, I above this value.

Continuous Source Current ––– –––

170

c

(Body Diode) Pulsed Source Current ––– ––– 670

(Body Diode)

di

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 50 75 ns

––– 60 90

Reverse Recovery Charge ––– 94 140 nC

––– 140 210

Reverse Recovery Current ––– 3.5 ––– A

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 I

≤ 75A, di/dt ≤ 630A/µs, V

SD

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

, starting TJ = 25°C, L = 0.033mH

Jmax

= 108A, VGS =10V. Part not recommended for use

AS

as C

 C

C

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

 R

while V

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

oss

is measured at TJ approximately 90°C.

θ

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

Conditions

MOSFET symbol

A

showing the integral reverse

p-n junction diode. T

= 25°C, IS = 75A, VGS = 0V

J

T

= 25°C VR = 85V,

J

T

= 125°C IF = 75A

J

T

= 25°C

J

T

= 125°C

J

T

= 25°C

J

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

DSS

.

DSS

di/dt = 100A/µs

.

D

G

S

g

2 www.irf.com

IRFP4110PbF

1000

TOP 15V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 4.5V

100

VGS

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

60µs PULSE WIDTH

≤

Tj = 25°C

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

) A

(

100

t n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r D

,

D

I

TJ = 175°C

1

TJ = 25°C

V

= 25V

DS

≤

60µs PULSE WIDTH

0.1 1 2 3 4 5 6 7

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1000

) A

( t n e

r

r u

C e

c

r

100

u o S

o

t

n

i a

r D

,

D

I

TOP 15V

BOTTOM 4.5V

VGS

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

60µs PULSE WIDTH

≤

Tj = 175°C

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

) d e z

i

l a

m

r o

N

(

2.5

2.0

1.5

1.0

ID = 75A

V

= 10V

GS

0.5

-60 -40 -20 0 20 40 60 80 100 120140160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

100000

) F

10000

p

( e

c n a

t

i c a p a

C

1000

, C

100

V

= 0V, f = 1 MHZ

GS

C

= C

C

iss

rss

oss

= C

gs

gd

ds

C

iss

C

oss

C

rss

+ Cgd, C

+ C

SHORTED

ds

gd

1 10 100

VDS, Drain-to-Source Voltage (V)

12.0 ID= 75A

)

10.0

V

( e

g a

t

l

8.0

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

VDS= 80V

VDS= 50V

0.0 0 50 100 150 200

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

www.irf.com 3