International Rectifier IRFP3710 Datasheet
PD-91490C
IRFP3710
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
G
D
V
= 100V
DSS
R
DS(on)
= 0.025W
ID = 57A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
TO-247AC
because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 180
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 530 mJ
Avalanche Current 28 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
qJC
R
qCS
R
qJA
www.irf.com 1
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
IRFP3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
DV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/DT
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.025 W VGS = 10V, ID = 28A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 20 ––– ––– S VDS = 25V, ID = 28A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 190 ID = 28A
Gate-to-Source Charge ––– ––– 26 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 82 VGS = 1.7V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 50V
Rise Time ––– 59 ––– ID = 28A
Turn-Off Delay Time ––– 58 ––– RG = 2.5W
ns
Fall Time ––– 48 ––– RD = 1.7W, See Fig. 10
5.0
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3000 ––– VGS = 0V
Output Capacitance ––– 640 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25W , I
I
SD
TJ £ 175°C
2 www.irf.com
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
57
180
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
Reverse Recovery Time ––– 210 320 ns TJ = 25°C, IF = 28A
Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width £ 300µs; duty cycle £ 2%.
= 25°C, L = 1.4mH
J
= 28A. (See Figure 12)
AS
£ 28A, di/dt £ 460A/µs, V
DD
£ V
(BR)DSS
Uses IRF3710 data and test conditions
,
G
D
S
IRFP3710
A
A
)
A
A
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOT TOM 4. 5V
100
10
D
I , D ra in-to -S o u rc e C u rre n t (A )
4.5V
20µs PULS E WIDTH
T = 25°C
1
0.1 1 10 100
V , Drain- to -S o u rc e V o ltage (V)
DS
C
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
D
I , D ra in-to -S o u rc e C u rre n t (A )
20µs PULS E WIDTH
T = 175°C
1
0.1 1 10 100
V , Drain- to -S o u rc e V o ltage (V)
DS
C
Fig 2. Typical Output Characteristics
3.0
I = 4 6A
D
2.5
T = 25°C
100
10
D
I , Drain-to-Source Current (A)
1
45678910
V , Gate -to-Sourc e V o l tage (V
GS
J
T = 175°C
J
V = 50V
DS
20µs PULSE W IDTH
2.0
1.5
(N o rmalize d )
1.0
0.5
DS(on)
R , D ra in -to -S o u rc e On R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Tem pe rature (°C)
J
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
V = 10 V
GS
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