International Rectifier IRFP360LC Datasheet
HEXFET® Power MOSFET
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Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced C
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
iss
, C
oss
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PD - 9.1230
IRFP360LC
V
= 400V
DSS
R
ID = 23A
DS(on)
= 0.20 Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A
I
DM
PD @TC = 25°C Power Dissipation 280 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
T
J
T
STG
Pulsed Drain Current 92
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ±30 V
Single Pulse Avalanche Energy 1200 mJ
Avalanche Current 23 A
Repetitive Avalanche Energy 28 mJ
Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 0.45
Case-to-Sink, Flat, Greased Surface –––– 0.24 –––– °C/W
Junction-to-Ambient –––– –––– 40
Revision 0
IRFP360LC
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 400 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.49 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 14A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 13 ––– ––– S VDS = 50V, ID = 14A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
––– ––– 25 VDS = 400V , VGS = 0V
––– ––– 250 VDS = 320V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– ––– 110 ID = 23A
Gate-to-Source Charge ––– ––– 28 nC VDS = 320V
Gate-to-Drain ("Miller") Charge ––– ––– 45 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 16 ––– VDD = 200V
Rise Time ––– 75 ––– ID = 23A
Turn-Off Delay Time ––– 42 ––– RG = 4.3Ω
ns
Fall Time ––– 50 ––– RD = 7.9Ω, See Fig. 10
Internal Drain Inductance ––– 5.0 –––
Internal Source Inductance ––– 13 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3400 ––– VGS = 0V
Output Capacitance ––– 540 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 4.0mH
DD
RG = 25Ω, I
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 23
A
––– ––– 92
Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 23A, VGS = 0V
Reverse Recovery Time ––– 400 600 ns TJ = 25°C, IF = 23A
Reverse Recovery Charge ––– 5.7 8.6 µC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 23A, di/dt ≤ 170A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 23A. (See Figure 12)
AS
IRFP360LC
GS
, Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
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1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
BOTTOM 4.5V
10
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25°C
0.1
0.1 1 1 0 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 1. Typical Output Characteristics,
TC = 25oC
1000
4.5V
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
BOTT OM 4.5V
10
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics,
TC = 150oC
3.0
I = 23A
D
4.5V
100
T = 15 0 °C
J
10
1
0.1
4 5 6 7 8 9 10
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
V
T = 25°C
J
V = 50V
DS
20µs P U LSE WIDTH
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-6 0 -40 -20 0 20 40 6 0 80 1 00 120 14 0 160
T , Junction Temperature (°C)
J
Vs. Temperature
V = 10V
GS
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