International Rectifier IRFP3415 Datasheet
PD - 93962
IRFP3415
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET® Power MOSFETs from
G
D
V
= 150V
DSS
R
DS(on)
= 0.042Ω
ID = 43A
S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
I
DM
PD @TC = 25°C Power Dissipation 20 0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 150
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 590 mJ
Avalanche Current 22 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRFP3415
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 150 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.042 Ω VGS = 10V, ID = 22A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 19 ––– ––– SVDS = 50V, ID = 22A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 200 ID = 22A
Gate-to-Source Charge ––– ––– 17 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 98 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 75V
Rise Time ––– 55 ––– ID = 22A
Turn-Off Delay Time ––– 71 ––– RG = 2.5Ω
ns
Fall Time ––– 69 ––– RD = 3.3Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2400 ––– VGS = 0V
Output Capacitance ––– 640 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
43
150
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V
Reverse Recovery Time ––– 260 390 ns TJ = 25°C, IF = 22A
Reverse RecoveryCharge ––– 2.2 3.3 µC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 2.4mH
DD
RG = 25Ω, I
= 22A. (See Figure 12)
AS
I
≤ 22A, di/dt ≤ 820A/µs, V
SD
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
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D
S
IRFP3415
1000
100
D
I , Drain-to-Source Current (A)
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20us PULSE WIDTH
1 10 100
V , Drain-to-Source Voltage (V)
DS
o
T = 25 C
J
Fig 1. Typical Output Characteristics
1000
1000
100
D
I , Drain-to-Source Current (A)
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20us PULSE WIDTH
1 10 100
V , Drain-to-Source Voltage (V)
DS
o
T = 175 C
J
Fig 2. Typical Output Characteristics
3.0
37A
I =
D
2.5
2.0
°
T = 25 C
J
100
D
I , Drain-to-Source Current (A)
10
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
V = 50V
DS
20µs PULSE WIDTH
°
T = 175 C
J
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
o
Vs. Temperature
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