International Rectifier IRFP32N50K Datasheet
PD - 94099A
IRFP32N50K
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
V
DSS
500V 0.135Ω 32A
Circuits
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Low R
DS(on)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A
I
DM
PD @TC = 25°C Power Dissipation 460 W
V
GS
dv/dt Peak Diode Recovery dv/dt 13 V/ns
T
J
T
STG
Pulsed Drain Current 130
Linear Derating Factor 3.7 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case )
Mounting torque, 6-32 or M3 screw 10lb*in (1.1N*m)
HEXFET® Power MOSFET
R
DS(on)
typ. I
TO-247AC
D
°C
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 450 mJ
Avalanche Current ––– 32 A
Repetitive Avalanche Energy ––– 46 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.26
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
www.irf.com 1
05/24/01
IRFP32N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 265 ––– VGS = 0V, VDS = 0V to 400V
oss
Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.135 0.16 Ω VGS = 10V, ID = 32A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
––– ––– 50 µA V
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 150°C
nA
= 500V, VGS = 0V
DS
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 14 ––– ––– SVDS = 50V, ID = 32A
Total Gate Charge ––– ––– 190 ID = 32A
Gate-to-Source Charge ––– ––– 59 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 84 VGS = 10V
Turn-On Delay Time ––– 28 ––– VDD = 250V
Rise Time ––– 120 ––– ID = 32A
Turn-Off Delay Time ––– 48 ––– RG = 4.3Ω
ns
Fall Time ––– 54 ––– VGS = 10V
Input Capacitance ––– 5280 ––– VGS = 0V
Output Capacitance ––– 550 ––– VDS = 25V
Reverse Transfer Capacitance ––– 45 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 5630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 155 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
t
rr
Q
I
RRM
t
on
SD
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
32
130
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V
Reverse Recovery Time ––– 530 800 ns TJ = 25°C, IF = 32A
Reverse RecoveryCharge ––– 9.0 13.5 µC di/dt = 100A/µs
Reverse RecoveryCurrent ––– 30 ––– A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
C
eff. is a fixed capacitance that gives the same charging time
Starting T
I
AS
I
SD
= 25°C, L = 0.87mH, RG = 25Ω,
J
= 32A,
≤ 32A, di/dt ≤ 197A/µs, V
DD
≤ V
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
.
TJ ≤ 150°C
2 www.irf.com
D
S
IRFP32N50K
1000
100
10
1
, Drain-to-Source Current (A)
D
0.1
I
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000
100
10
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
32A
I =
D
2.5
100
10
1
D
I , Drain-to-Source Current (A)
0.1
4 5 7 8 9 11 12
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
°
T = 150 C
J
T = 25 C
J
°
V = 50V
DS
20µs PULSE WIDTH
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
V =
Fig 4. Normalized On-Resistance
GS
10V
°
Vs. Temperature
www.irf.com 3
Loading...