International Rectifier IR51H737 Datasheet
Data Sheet No. PD-6.057D
)
COM
V
IN
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IR51H737
SELF-OSCILLATING HALF-BRIDGE
Features
Output Power MOSFETs in half-bridge configuration
n
300V Rated Breakdown Voltage
High side gate drive designed for bootstrap operation
n
Accurate timing control for both Power MOSFETs
n
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
Internal oscillator with programmable frequency
n
f =
14 R 75 CTT. × ( ) × Ω
Zener clamped Vcc for offline operation
n
Half-bridge output is out of phase with R
n
1
+
T
Description
The IR51H737 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch
immune CMOS technologies, along with the
HEXFET® power MOSFET technology, enable
ruggedized single package construction. The front-end
features a programmable oscillator which functions
similar to the CMOS 555 timer. The supply to the
control circuit has a zener clamp to simplify offline
operation. The output features two HEXFETs in a
half-bridge configuration with an internally set
deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and
low side power MOSFETs are matched to simplify use
in 50% duty cycle applications. The device can
operate up to 300 volts.
Product Summary
V
(max) 300V
IN
Duty Cycle 50%
Deadtime 1.2µs
R
DS(on
PD (TA = 25 ºC) 2.0W
Package
IR51H737
9506
0.75ΩΩ
Typical Connection
U P TO 300V D C B US
RT
CT
IR51H 737
1
V
CC
2
R
T
3
C
T
4
COM
6
V
B
9
V
IN
7
VO
TO LOA D
IR51H737
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
---
-5
---
---
---
-55
-55
---
Min.
VO + 10
---
-5
---
---
---
-40
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Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol Definition
V
IN
V
B
VO Half-Bridge Output Voltage
V
RT
V
CT
I
CC
I
RT
dv/dt Peak Diode Recovery dv/dt
P
D
R
θJA
T
J
T
S
T
L
High Voltage Supply
High Side Floating Supply Absolute Voltage
RT Voltage
CT Voltage
Supply Current (Note 1)
RT Output Current
Package Power Dissipation @ TA ≤ +25ºC
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Max. Units
300
325
VIN + 0.3 V
VCC + 0.3
VCC + 0.3
25 mA
5
3.4 V/ns
2.00 W
60 ºC/W
150
150 ºC
300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.
Parameter
Symbol Definition
V
B
V
IN
VO Half-Bridge Output Voltage
I
D
I
CC
T
A
Note 1: Because of the IR51H737's application specificity toward off-line supply systems, this IC contains a
High Side Floating Supply Absolute Voltage
High Voltage Supply
Continuous Drain Current
(T
A
= 25ºC)
(TA = 85ºC)
Supply Current (Note 1)
Ambient Temperature
zener clamp structure between the chip V
and COM which has a nominal breakdown voltage of
CC
15.6V. Therefore, the IC supply voltage is normally derived by current feeding the V
(typically by means of a high value resistor connected between the chip V
voltage and a local decoupling capacitor from V
to COM) and allowing the internal zener clamp
CC
circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC,
low impedance power source of greater than V
CLAMP
.
Max. Units
VO + V
CC
CLAMP
300 V
300
1.3 A
0.8
5mA
125 ºC
CC
and the rectified line
lead
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