International Rectifier IR2155 Datasheet
Data Sheet No. PD-6.029G
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IR2155
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Undervoltage lockout
n Programmable oscillator frequency
f =
1.4 (R 150 ) C
nMatched propagation delay for both channels
n Micropower supply startup current of 125 µA typ.
n Low side output in phase with R
1
×+ ×
Ω
TT
T
Description
The IR2155 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high
and low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the
555 timer. The output drivers feature a high pulse current buff er stage and an internal deadtime designed f or
minimum driver cross-conduction. Propagation dela ys
for the two channels are matched to simplify use in
50% duty cycle applications. The floating channel can
be used to drive an N-channel power MOSFET or IGBT
Product Summary
V
OFFSET
Duty Cycle 50%
IO+/- 210 mA / 420 mA
V
OUT
Deadtime (typ.) 1.2 µs
600V max.
10 - 20V
Package
in the high side configuration that operates off a high
voltage rail up to 600 volts.
Typical Connection
up to 600V
V
CC
R
T
C
T
V
HO
V
LOCOM
B
S
TO
LOAD
ONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-199
C
IR2155
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Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Parameter Value
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
LO
V
RT
V
CT
I
CC
I
RT
dVs/dt Allowable Offset Supply Voltage Transient — 50 V/ns
P
D
R
θJA
T
J
T
S
T
L
High Side Floating Supply Voltage -0.3 625
High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
High Side Floating Output Voltage VS - 0.3 V
Low Side Output Voltage -0.3 VCC + 0.3
RT V oltage -0.3 VCC + 0.3
CT Voltage -0.3 V
Supply Current (Note 1) — 25
RT Output Current -5 5
Package Power Dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0
(8 Lead SOIC) — 0.625
Thermal Resistance, Junction to Ambient (8 Lead DIP) — 125
(8 Lead SOIC) — 200
Junction Temperature — 150
Storage Temperature -55 150 °C
Lead Temperature (Soldering, 10 seconds) — 300
CC
B
+ 0.3
+ 0.3
mA
°C/W
V
W
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
LO
I
CC
T
A
Note 1: Because of the IR2155’s application specificity toward off-line supply systems, this IC contains a zener clamp
B-200 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage — 600
High Side Floating Output Voltage V
Low Side Output Voltage 0 V
Supply Current (Note 1) — 5 mA
Ambient Temperature -40 125 °C
structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V
to COM) and allowing the internal zener clamp circuit to deter mine the nominal supply voltage. There-
V
CC
fore, this circuit should not be driven by a DC, low impedance power source of greater than V
offset rating is tested with all supplies biased at 15V differential.
S
Parameter Value
S
and the rectified line voltage and a local decoupling capacitor from
CC
V
B
CC
CLAMP
V
.
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