International Rectifier IR2151S, IR2151 Datasheet
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Undervoltage lockout
n Programmable oscillator frequency
f =
×+ ×
1
1.4 (R 75 ) C
TT
Ω
nMatched propagation delay for both channels
n Low side output in phase with R
T
Descr iption
The IR2151 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high
and low side referenced output channels. Proprietar y
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the
555 timer. The output drivers f eature a high pulse current buff er stage and an internal deadtime designed f or
minimum driver cross-conduction. Propagation dela ys
for the two channels are matched to simplify use in
50% duty cycle applications. The floating channel can
be used to drive an N-channel power MOSFET or IGBT
in the high side configuration that operates off a high
voltage rail up to 600 volts.
Data Sheet No. PD-6.034G
IR2151
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
Duty Cycle 50%
IO+/- 100 mA / 210 mA
V
OUT
10 - 20V
Deadtime (typ.) 1.2 µs
Packages
Typical Connection
up to 600V
V
CC
V
B
V
S
HO
LOCOM
R
T
C
T
TO
LOAD
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-187
IR2151
B-188 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
Parameter Value
Symbol Definition Min. Max. Units
V
B
High Side Floating Supply Absolute Voltage VS + 10 VS + 20
V
S
High Side Floating Supply Offset Voltage — 600
V
HO
High Side Floating Output Voltage V
S
V
B
V
LO
Low Side Output Voltage 0 V
CC
I
CC
Supply Current (Note 1) — 5 mA
T
A
Ambient Temperature -40 125 °C
Pa rameter Value
Symbol Definition Min. Max. Units
V
B
High Side Floating Supply Voltage -0.3 625
V
S
High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
V
HO
High Side Floating Output Voltage VS - 0.3 V
B
+ 0.3
V
LO
Low Side Output Voltage -0.3 VCC + 0.3
V
RT
RT V oltage -0.3 VCC + 0.3
V
CT
CT Voltage -0.3 V
CC
+ 0.3
I
CC
Supply Current (Note 1) — 25
I
RT
RT Output Current -5 5
dVs/dt Allowable Offset Supply Voltage Transient — 50 V/ns
P
D
Package Power Dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0
(8 Lead SOIC) — 0.625
R
θJA
Thermal Resistance, Junction to Ambient (8 Lead DIP) — 125
(8 Lead SOIC) — 200
T
J
Junction Temperature — 150
T
S
Storage Temperature -55 150 °C
T
L
Lead Temperature (Soldering, 10 seconds) — 300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Po wer Dissipation ratings are measured
under board mounted and still air conditions.
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
V
°C/W
W
mA
V
structure between the chip VCC and COM which has a nominal breakdo wn voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V
CC
and the rectified line voltage and a local decoupling capacitor from
V
CC
to COM) and allowing the internal zener clamp circuit to deter mine the nominal supply voltage. There-
fore, this circuit should not be dri ven by a DC, low impedance power source of greater than V
CLAMP
.
Note 1: Because of the IR2151’s application specificity toward off-line supply systems, this IC contains a zener clamp
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