International Rectifier IR2117S, IR2117 Datasheet
Data Sheet No. PD-6.031C
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IR2117
SINGLE CHANNEL DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout
n CMOS Schmitt-triggered inputs with pull-down
n Output in phase with input
Description
The IR2117 is a high voltage, high speed power
MOSFET and IGBT driver. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is
compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage
designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
Product Summary
V
OFFSET
IO+/- 200 mA / 420 mA
V
OUT
t
(typ.) 125 & 105 ns
on/off
Packages
600V max.
10 - 20V
Typical Connection
V
CC
IN
V
CC
COM
up to 600V
V
B
HOIN
V
S
TO
LOAD
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-75
IR2117
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Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
Parameter Value
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
IN
dVs/dt Allowable Offset Supply Voltage Transient (Figure 2) — 50 V/ns
P
D
R
θJA
T
J
T
S
T
L
High Side Floating Supply Voltage -0.3 625
High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
High Side Floating Output Voltage VS - 0.3 V
Logic Supply Voltage -0.3 25
Logic Input Voltage -0.3 V
Package Power Dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0
(8 Lead SOIC) — 0.625
Thermal Resistance, Junction to Ambient (8 Lead DIP) — 125
(8 Lead SOIC) — 200
Junction Temperature — 150
Storage Temperature -55 150 °C
Lead Temperature (Soldering, 10 seconds) — 300
+ 0.3 V
B
+ 0.3
CC
W
°C/W
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
IN
T
A
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.
High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage Note 1 600
High Side Floating Output Voltage V
Logic Supply Voltage 10 2 0
Logic Input Voltage 0 V
Ambient Temperature -40 125 °C
B-76 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
offset rating is tested with all supplies biased at 15V differential.
S
Parameter Value
S
V
B
CC
V
Dynamic Electrical Characteristics
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V
(VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics
BIAS
are measured using the test circuit shown in Figure 3.
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
t
off
t
t
Turn-On Propagation Delay — 125 200 VS = 0V
Tur n-Off Propagation Delay — 105 180 VS = 600V
Turn-On Rise Time — 80 130
r
Tur n-Off Fall Time — 40 65
f
Static Electrical Characteristics
V
(VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
BIAS
COM. The V
Symbol Definition Min. Typ. Max. Units Test Conditions
V
V
V
V
I
I
QBS
I
QCC
I
IN+
I
IN-
V
BSUV+VBS
V
BSUV-
V
CCUV+VCC
V
CCUV-
I
O+
I
and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
O
Parameter Value
Logic “1” Input Voltage 6.4 — — VCC = 10V
IH
Logic “0” Input Voltage — — 3.8 VCC = 10V
IL
OH
OL
LK
O-
High Level Output V oltage, V
Low Level Output Voltage , V
Offset Supply Leakage Current — — 50 VB = VS = 600V
Quiescent VBS Supply Current — 50 24 0 V
Quiescent VCC Supply Current — 70 340 µA VIN = 0V or V
Logic “1” Input Bias Current — 20 40 VIN = V
Logic “0” Input Bias Current — — 1.0 VIN = 0V
Supply Undervoltage Positive Going Threshold 7.6 8.6 9.6
VBS Supply Undervoltage Negative Going Threshold 7.2 8.2 9.2
Supply Undervoltage Positive Going Threshold 7.6 8.6 9.6
VCC Supply Undervoltage Negative Going Threshold 7.2 8.2 9.2
Output High Short Circuit Pulsed Current 200 250 — VO = 0V, V
Output Low Short Circuit Pulsed Current 420 500 — VO = 15V, V
BIAS
O
- V
IR2117
ns
9.5 — — VCC = 15V
12.6 — — VCC = 20V
——6.0 VCC = 15V
——8.3 VCC = 20V
O
— — 100 IO = 0A
— — 100 IO = 0A
V
mV
V
mA
= 0V or V
IN
IN
PW ≤ 10 µs
PW ≤ 10 µs
CC
IN
= V
= 0V
CC
CC
CC
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-77
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