International Rectifier IR2111S, IR2111 Datasheet

Data Sheet No. PD-6.028C

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IR2111

HALF-BRIDGE DRIVER

Features

n Floating channel designed for bootstrap operation

Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune

n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n CMOS Schmitt-triggered inputs with pull-down
n Matched propagation delay for both channels
n Internally set deadtime

n High side output in phase with input

Description

The IR2111 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for
half-bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible
with standard CMOS outputs. The output drivers
feature a high pulse current buffer stage designed
for minimum driver cross-conduction. Internal
deadtime is provided to avoid shoot-through in the
output half-bridge. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to
600 volts.

Product Summary

V

OFFSET

IO+/- 200 mA / 420 mA

V

OUT

t

(typ.) 850 & 150 ns

on/off

Deadtime (typ.) 700 ns

600V max.

10 - 20V

Packages

Typical Connection

V

CC

IN

V

CC

IN
COM
LO

up to 600V

V

B

HO

V

S

TO

LOAD

CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-39

IR2111

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Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits be yond which damage to the device ma y occur. All voltage parameters are
absolute voltages ref erenced to COM. The Thermal Resistance and P o wer Dissipation r atings are measured under board
mounted and still air conditions. Additional information is shown in Figures 7 through 10.

Par ameter Value

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

dVs/dt Allowable Offset Supply V oltage T ransient (Figure 2) — 50 V/ns

P

D

R

θJA

T

J

T

S

T

L

High Side Floating Supply V oltage -0.3 625
High Side Floating Supply Offset V oltage VB - 25 VB + 0.3
High Side Floating Output V oltage VS - 0.3 V
Low Side and Logic Fix ed Supply V oltage -0.3 25
Low Side Output Voltage -0.3 VCC + 0.3
Logic Input V oltage -0.3 V

P ackage P ow er Dissipation @ TA ≤ +25° C (8 Lead DIP) — 1.0

(8 Lead SOIC) — 0.625

Thermal Resistance, Junction to Ambient (8 Lead DIP) — 12 5

(8 Lead SOIC) — 20 0
Junction Temperature — 150
Storage T emperature -55 150 °C
Lead Temperature (Soldering, 10 seconds) — 3 00

CC

B

+ 0.3

+ 0.3

V

W

°C/W

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

T

A

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.

High Side Floating Supply Absolute V oltage VS + 10 VS + 20
High Side Floating Supply Offset V oltage Note 1 60 0
High Side Floating Output V oltage V
Low Side and Logic Fix ed Supply V oltage 10 20
Low Side Output Voltage 0 V
Logic Input V oltage 0 V

Ambient T emper ature -40 125

B-40 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL

offset rating is tested with all supplies biased at 15V differential.

S

Parameter V alue

S

V

B

CC
CC

V

°C

Dynamic Electrical Characteristics

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V

(VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics

BIAS

are measured using the test circuit shown in Figure 3.

Parameter Value

Symbol Definition Min. Typ. Max. Units Test Conditions

t

on

t

off

t
t

DT Deadtime, LS Turn-Off to HS Turn-On & — 7 00 900

MT Delay Matching, HS & LS Turn-On/Off — 30 —

Turn-On Propagation Delay — 850 1,000 VS = 0V
Turn-Off Propagation Delay — 150 180 VS = 600V
Turn-On Rise Time — 80 130

r

Turn-Off Fall Time — 40 65

f

HS Turn-Off to LS Turn-On

Static Electrical Characteristics

V

(VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to

BIAS

COM. The V

Symbol Definition Min. Typ. Max. Units Test Conditions

V

V

V
V

I

I

QBS

I

QCC

I

IN+

I

IN-

V

BSUV+VBS

V

BSUV-

V

CCUV+VCC

V

CCUV-

I

O+

I

and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

O

Parameter Value

Logic “1” Input Voltage for HO & Logic “0” for LO 6.4 — — VCC = 10V

IH

Logic “0” Input Voltage for HO & Logic “1” for LO — — 3.8 VCC = 10V

IL

OH

OL

LK

O-

High Level Output V oltage, V
Low Level Output Voltage , V
Offset Supply Leakage Current — — 50 VB = VS = 600V
Quiescent VBS Supply Current — 50 100 V
Quiescent VCC Supply Current — 70 180 µA VIN = 0V or V
Logic “1” Input Bias Current — 20 40 VIN = V
Logic “0” Input Bias Current — — 1.0 VIN = 0V

Supply Undervoltage Positive Going Threshold 7.3 8.4 9.5

VBS Supply Undervoltage Negative Going Threshold 7.0 8.1 9.2

Supply Undervoltage Positive Going Threshold 7.6 8.6 9.6
VCC Supply Undervoltage Negative Going Threshold 7.2 8.2 9.2
Output High Short Circuit Pulsed Current 200 250 — VO = 0V, V

Output Low Short Circuit Pulsed Current 420 500 — VO = 15V, V

BIAS

O

- V

IR2111

ns

9.5 — — VCC = 15V

12.6 — — VCC = 20V

——6.0 VCC = 15V
——8.3 VCC = 20V

O

— — 100 IO = 0A
— — 100 IO = 0A

V

mV

V

mA

= 0V or V

IN

IN

PW ≤ 10 µs

PW ≤ 10 µs

CC

IN

= V

CC
CC

CC

= 0V

CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-41