Data Sheet No. PD-6.043C
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IR2101
HIGH AND LOW SIDE DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout
n 5V Schmitt-triggered input logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
Description
The IR2101 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs. The
output drivers feature a high pulse current buff er stage
designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Product Summary
V
OFFSET
IO+/- 100 mA / 210 mA
V
OUT
t
(typ.) 130 & 90 ns
on/off
Delay Matching 30 ns
600V max.
10 - 20V
Packages
Typical Connection
V
CC
HIN
LIN
V
CC
HIN
LIN
V
HO
V
LOCOM
up to 600V
B
S
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-1
TO
LOAD
IR2101
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Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Parameter Value
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
V
IN
dVs/dt Allowable Offset Supply Voltage Transient — 50 V/ns
P
D
R
θJA
T
J
T
S
T
L
High Side Floating Supply Voltage -0.3 625
High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
High Side Floating Output Voltage VS - 0.3 V
Low Side and Logic Fixed Supply Voltage -0.3 25
Low Side Output Voltage -0.3 VCC + 0.3
Logic Input Voltage (HIN & LIN) -0.3 V
Package Power Dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0
(8 Lead SOIC) — 0.625
Thermal Resistance, Junction to Ambient (8 Lead DIP) — 125
(8 Lead SOIC) — 200
Junction Temperature — 15 0
Storage Temperature -55 150 °C
Lead Temperature (Soldering, 10 seconds) — 300
CC
B
+ 0.3
+ 0.3
°C/W
V
W
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
V
IN
T
A
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.
High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage Note 1 600
High Side Floating Output Voltage V
Low Side and Logic Fixed Supply Voltage 10 20
Low Side Output Voltage 0 V
Logic Input Voltage (HIN & LIN) 0 V
Ambient Temperature -40 125
B-2 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
offset rating is tested with all supplies biased at 15V differential.
S
Pa rameter Value
S
V
B
CC
CC
V
°C