INTERNATIONAL RECTIFIER IR 2011S Datasheet

Data Sheet No.PD60217 revB

IR2011(

HIGH AND LOW SIDE DRIVER

Features

· Floating channel designed for bootstrap operation

Fully operational up to +200V
Tolerant to negative transient voltage, dV/dt immune

· Gate drive supply range from 10V to 20V

· Independent low and high side channels

· Input logicHIN/LIN active high

· Undervoltage lockout for both channels

· 3.3V and 5V input logic compatible

· CMOS Schmitt-triggered inputs with pull-down

· Matched propagation delay for both channels

· Also available LEAD-FREE (PbF)

Applications

· Audio Class D amplifiers

· High power DC-DC SMPS converters

· Other high frequency applications

Description

The IR2011 is a high power, high speed power MOSFET driver with independent high
and low side referenced output channels, ideal for Audio Class D and DC-DC converter
applications. Logic inputs are compatible with standard CMOS or LSTTL output, down
to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be used to drive an N-channel
power MOSFET in the high side configuration which operates up to 200 volts. Propri­etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con­struction.

Typical Connection

Product Summary

V

OFFSET

IO+/- 1.0A /1.0A typ.

V

OUT

t

on/off

Delay Matching 20 ns max.

S) & (PbF

200V max.

10 - 20V

80 & 60 ns typ.

Packages

8-Lead SOIC

IR2011S

8-Lead PDIP

IR2011

200V

)

45

V

V

HO

V

CC

S

B

18

TO

LOAD

HIN

LIN

COM

V

CC

(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.

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HIN

LIN

COM

LO

IR2011(S) & (PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

dVs/dt Allowable offset supply voltage transient (figure 2) — 50 V/ns

P

D

R

THJA

T

J

T

S

T

L

High side floating supply voltage -0.3 225

High side floating supply offset voltage VB - 25 VB + 0.3

High side floating output voltage VS - 0.3 V

Low side fixed supply voltage -0.3 25

Low side output voltage -0.3 VCC +0.3

Logic input voltage (HIN & LIN) -0.3 V

Package power dissipation @ T

Thermal resistance, junction to ambient (8-lead DIP) — 125

Junction temperature — 150

Storage temperature -55 150

Lead temperature (soldering, 10 seconds) — 300

£ +25°C (8-lead DIP) — 1.0

A

(8-lead SOIC) — 0.625

(8-lead SOIC) — 200

B

CC

+ 0.3

+0.3

°C/W

V

W

°C

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions. The VS and COM offset ratings
are tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

T

A

Note 1: Logic operational for VS of -4 to +200V. Logic state held for VS of -4V to -VBS.

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High side floating supply absolute voltage VS + 10 VS + 20

High side floating supply offset voltage Note 1 200

High side floating output voltage V

Low side fixed supply voltage 10 20

Low side output voltage 0 VCC

Logic input voltage (HIN & LIN) COM 5.5
Ambient temperature -40 125 °C

S

V

B

V

IR2011(S) & (PbF)

Dynamic Electrical Characteristics

V

(VCC, VBS) = 15V, CL = 1000 pF, T

BIAS

Symbol Definition Min. Typ.Max.UnitsTest Conditions

t

on

t

off

DM1 Turn-on delay matching | t

DM2 Turn-off delay matching | t

Turn-on propagation delay — 80 — VS = 0V

Turn-off propagation delay — 75 — VS = 200V

t

Turn-on rise time — 35 50

r

t

Turn-off fall time — 20 35

f

Static Electrical Characteristics

V

(VCC, VBS) = 15V, and T

BIAS

COM and are applicable to all logic input leads: HIN and LIN. The VO and IO parameters are referenced to COM and are
applicable to the respective output leads: HO or LO.

= 25°C unless otherwise specified. The V

A

= 25°C unless otherwise specified. Figure 1 shows the timing definitions.

A

ns

(H) - t

on

(H) - t

off

(L) | — — 20

on

(L) | — — 20

off

, VTH and IIN parameters are referenced to

IN

Symbol Definition Min. Typ.Max.UnitsTest Conditions

V

IH

V

V

OH

V

OL

I

LK

I

QBS

I

QCC

I

IN+

I

IN-

V

BSUV+

V

BSUV-

V

CCUV+

V

CCUV-

I

O+

I

O-

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Logic “1” input voltage 2.2 — —

Logic “0” input voltage — — 0.7

IL

High level output voltage, V

Low level output voltage, V

BIAS

O

- V

O

— — 2.0 IO = 0A

— — 0.2 20mA

V

Offset supply leakage current — — 50 VB=VS = 200V

Quiescent VBS supply current — 90 210 V

Quiescent VCC supply current — 140 230 VIN = 0V or 3.3V

µA

Logic “1” input bias current — 7.0 20 VIN = 3.3V

Logic “0” input bias current — — 1.0 V

VBS supply undervoltage positive going 8.2 9.0 9.8
threshold
VBS supply undervoltage negative going 7.4 8.2 9.0
threshold

V

VCC supply undervoltage positive going 8.2 9.0 9.8
threshold
VCC supply undervoltage negative going 7.4 8.2 9.0
threshold
Output high short circuit pulsed current — 1.0 — VO = 0V,

Output low short circuit pulsed current — 1.0 — VO = 15V,

A

VCC = 10V - 20V

= 0V or 3.3V

IN

= 0V

IN

PW £ 10 µs

PW £ 10 µs

IR2011(S) & (PbF)

Functional Block Diagram

HIGH

VOLTAGE

3V S-TRIGGER

HIN

3V S-TRIGGER

LIN

LOW

VOLTAGE

LEVEL
SHIFT

LOW

VOLTAGE

LEVEL

SHIFT

BUFFER

Lead Definitions

SymbolDescription

HIN Logic input for high side gate driver output (HO), in phase
LIN Logic input for low side gate driver output (LO), in phase
V

B

HO High side gate drive output
V

S

V

CC

LO Low side gate drive output
COM Low side return

High side floating supply

High side floating supply return
Low side supply

LEVEL

SHIFT

CIRCUIT

UV

DETECT

DETECT

UV

DELAY

UV Q
S
R

V

B

HO

V

S

V

CC

LO

COM

Lead Assignments

V

V

HO

V

CC

4

S

3
2

B

1

5
6

7
8

HIN

LIN

COM

LO

5
6

7
8

HIN

LIN

COM

LO

8-Lead PDIP 8-Lead SOIC

IR2011 IR2011S

Part Number

4 www.irf.com

V

V

HO

V

CC

4

S

3
2

B

1

IR2011(S) & (PbF)

50%

ton(L)

ton(H)

10%

10%

t

rise

DM1

90%

50%

HIN / LIN

t

fall

90%

t

(H)

off

t

(L)

off

10%

DM2

90%

HO

LO

Figure 1. Timing Diagram

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IR2011(S) & (PbF)

Turn-on Propagation Delay (ns)

Tu rn -on P ro pag ation De lay ( ns )

Typ.

500

400

300

200

100

Typ.

0

-50 -25 0 25 50 75 100 125
Temperature (oC)

Figure 2A. Turn-on Propagation Delay

vs. Temperature

500

400

300

200

500

400

300

200

Typ.

100

0

10 12 14 16 18 20

Supply Voltage (V)

Figure 2B. Turn-on Propagation Delay

vs. Supply Voltage

500

400

300

200

100

Typ.

0

Turn-off Propagation Delay (ns)

-50 -25 0 25 50 75 100 125
Temperature (oC)

Figure 3A. Turn-off Propagation Delay

vs. Temperature

100

0

Turn- off Propagation Delay (ns)

10 12 14 16 18 20

Supply Voltage (V)

Figure 3B. Turn-off Propagation Delay

vs. Supply Voltage

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