International Rectifier IFRU 3710 ZPbF Service Manual

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PD - 95513A

S

D

G

Absolute Maximum Ratings

ID @ TC = 25°C

Contin uous Drain Current , V

@ 10V

ID @ TC = 100°C

Contin uous Drain Current , V

@ 10V

ID @ TC = 25°C

Contin uous Drain Current , V

@ 10V

IDMPulse d D r ai n C ur rent

c

PD @TC = 25°C

V

E

Single Pulse Av alanch e Energy

d

E

(Tested )

Single Pulse Avalanche Energy Tested Value

h

IARAvalanche Current

c

EARRepeti ti ve Avalanche En er gy

g

T

Thermal Resistance

R

Junction- to-Ambient (PCB moun t)

i

R

AUTOMOTIVE MOSFET

Features

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free

Description

Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameter Units

(Silicon Limited)

(Package Limited)

GS

AS (Thermally limited) AS

J STG

GS GS GS

Power Dissipati on W Linear D er a t i ng Factor W/°C

Gate-to-Sour c e V o ltage V



Operat i n g J unction and Storag e Temperature Range °C

Soldering Temperature, for 10 seconds Mounting Torque , 6- 32 or M3 screw

IRFR3710ZPbF IRFU3710ZPbF

HEXFET® Power MOSFET

V

= 100V

DSS

R

®

D-Pak

IRFR3710Z

Max.

56 39

42 220 140

0.95

± 20

150 200

See Fig.12a, 12b, 15 , 16

-55 to + 175

300 (1. 6m m fr o m case )

y

in (1.1Nym)

10 lbf

DS(on)

ID = 42A

IRFU3710Z

= 18mΩ

I-Pak

A

mJ

A

mJ

JC

θ

JA

θ

JA

θ

HEXFET® is a registered trademark of International Rectifier.

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Parameter Typ. Max. Units

Junction-to-Case ––– 1.05

––– 40 °C/W

Junction-to-Ambient ––– 110

12/03/04

IRFR/U3710ZPbF

S

D

G

S

D

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

V

/∆T

R

mΩV

I

Q

t

L

C

eff.

Source-Drain Ratings and Characteristics

z

di/dt = 100A/µs

J

Parameter Min. Typ. Max. Units

(BR)DSS

∆

(BR)DSS DS(on) GS(th)

gfs Forwa rd Transconductance 39 –– – ––– S

DSS

GSS

g gs gd

d(on) r d(off) f

D

S

iss oss rss oss oss oss

Drain-to-Sou rce Breakdown Volt a ge 100 ––– ––– V Breakdown Voltag e Temp. Coef ficient ––– 0.088 ––– V/°C

J

Stat ic D r ai n- to-Sour c e O n- R e s i s tance ––– 15 18 Gate Threshold Voltage 2.0 ––– 4.0 V

Drain-to-Sou rce Leakage Current ––– ––– 20 µA

––– ––– 250 Gate-to-Sour c e Fo r w ard Leakage ––– ––– 200 nA Gate-to-Sour c e R ev erse Leak a ge ––– – –– -200 Total Gate Charge ––– 69 100 Gate-to-Sour c e C ha r ge ––– 15 ––– nC Gate-to-Drai n ("Miller" ) Charge ––– 25 ––– Turn-On Delay Time ––– 14 ––– Rise Time ––– 43 ––– Turn-Off Delay Time ––– 53 ––– ns Fall Time ––– 42 ––– Internal Drain Inductance ––– 4.5 ––– Between lead,

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 2930 ––– Output Capacitance ––– 290 ––– Reverse Transf er C ap ac itance ––– 180 ––– pF Output Capacitance ––– 1200 ––– Output Capacitance ––– 180 ––– Effe c tive Out pu t Capacita nc e ––– 430 –––

Conditions

VGS = 0V, ID = 250µA Referen ce to 25°C, I

= 10V, ID = 33A

V

GS

VDS = VGS, ID = 250µA V

= 25V, ID = 33A

DS

V

= 100V, VGS = 0V

DS

= 100V, VGS = 0V, TJ = 125°C

V

DS

= 20V

V

GS

= -20V

V

GS

= 33A

I

D

= 80V

V

DS

VGS = 10V

e

VDD = 50V

= 33A

I

D

Ω

= 6.8

R

G

VGS = 10V

e

nH 6mm (0.25in.)

and center of die contact VGS = 0V

= 25V

V

DS

ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MH VGS = 0V, VDS = 80V, ƒ = 1. 0M H VGS = 0V, VDS = 0V to 80V

D

e

= 1mA

G

f

Paramete r Min . Typ. Max. Uni ts

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Contin uous Source Cu rrent ––– ––– 56 (Body Diode) A

Pulsed Source Current ––– ––– 220 (Body Diode)

Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 35 53 ns Reverse Recovery Charge ––– 41 62 nC Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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c

Conditions

MOSFET symbol showing the

integral reverse p-n junct ion diode.

T

= 25°C, IS = 33A, VGS = 0V

J

TJ = 25°C, IF = 33A, VDD = 50V

e

IRFR/U3710ZPbF

1000

TOP 15V

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

100

10

BOTTOM 4.0V

VGS 10V

6.0V

5.0V

4.8V

4.5V

4.3V

4.0V 60µs PULSE WIDTH

1

Tj = 25°C

0.1 1 10 100 VDS, Drain-to-Sour ce Voltage (V)

1000

) A

(

100

t

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r D

,

D

I

TOP 15V

BOTTOM 4.0V

1

VGS 10V

6.0V

5.0V

4.8V

4.5V

4.3V

4.0V

60µs PULSE WIDTH Tj = 175°C

0.1

0.1 1 10 100 VDS, Drain-to-Sour ce Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

100

)

Α

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

n

10

i

a

r D

,

D

I

TJ = 175°C

TJ = 25°C

V

= 25V

DS

60µs PULSE WIDTH

1.0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

S

(

80

e

c

n

a

t

c

u

d

60

n

o

c

s

n

a

r T

40

d

r

a w

r

o F

20

,

s

f

G

TJ = 25°C

TJ = 175°C

V

0

0 1020304050607080

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

DS

= 10V

vs. Drain Current

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IRFR/U3710ZPbF

100000

10000

) F

p

(

e

c

n

a

t

i

1000

c

a

p

a C

, C

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

C

iss

C

oss

C

rss

iss

C

rss

C

oss

1 10 100

VDS, Drain-to-Sour ce Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000.00

) A

(

t

100.00

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

,

D S

I

10.00

1.00

0.10

TJ = 175°C

TJ = 25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drai n Voltage (V)

SHORTED

V

GS

= 0V

) V

( e

g

a

t

l

o V

e

c

r

u

o S

-

o

t

-

e

t

a G

, V

12.0 ID= 33A

10.0

8.0

6.0

4.0

S G

2.0

0.0 0 1020304050607080

VDS= 80V VDS= 50V VDS= 20V

Q

Total G ate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

) A

(

t

100

n

e

r

u C e

c

r

u

10

o S

-

o

t

-

n

i

a

r D

1

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Sour ce Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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