International Rectifier CPV363MF Datasheet
PD - 5.023B
Next Data SheetIndex
Previous Datasheet
To Order
CPV363MF
IGBT SIP MODULE
Features
1
Fast IGBT
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Product Summary
Q1
3
Q2
6
D1 D3 D5
Q3
9
D2 D4 D6
Q4
12
7 13 19
Q5
15
10 164
Q6
18
Output Current in a Typical 5.0 kHz Motor Drive
7.65 A
per phase (2.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
RMS
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current, each IGBT 16
IC @ TC = 100°C Continuous Collector Current, each IGBT 8.7
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 6.1
I
FM
V
GE
V
ISOL
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 36 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 14
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 50 A
Clamped Inductive Load Current 50
Diode Maximum Forward Current 50
Gate-to-Emitter Voltage ±20 V
Isolation Voltage, any terminal to case, 1 min. 2500 V
Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m)
RMS
Thermal Resistance
R
(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 3.5
θJC
R
(DIODE) Junction-to-Case, each diode, one diode in conduction — 5.5 °C/W
θJC
R
(MODULE) Case-to-Sink, flat, greased surface 0.1 —
θCS
Wt Weight of module 20 (0.7) — g (oz)
Parameter Typ. Max. Units
Revision 1
C-149
CPV363MF
Next Data SheetIndex
Previous Datasheet
To Order
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
/∆T
Temp. Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.5 1.6 IC = 8.7A VGE = 15V
— 1.9 — V IC = 16A See Fig. 2, 5
— 1.6 — IC = 8.7A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemp. Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 6.0 8.0 — S VCE = 100V, IC = 8.7A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13
— 1.3 1.6 IC = 12A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V
Total Gate Charge (turn-on) — 23 30 IC = 16A
Gate - Emitter Charge (turn-on) — 2.4 5.9 nC VCC = 400V
Gate - Collector Charge (turn-on) — 9.2 15 See Fig. 8
Turn-On Delay Time — 25 — TJ = 25°C
Rise Time — 21 — ns IC = 8.7A, VCC = 480V
Turn-Off Delay Time — 210 300 VGE = 15V, RG = 23Ω
Fall Time — 300 450 Energy losses include "tail" and
Turn-On Switching Loss — 0.44 — diode reverse recovery
Turn-Off Switching Loss — 2.0 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 2.4 3.2
Turn-On Delay Time — 25 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 21 — ns IC = 8.7A, VCC = 480V
Turn-Off Delay Time — 280 — VGE = 15V, RG = 23Ω
Fall Time — 550 — Energy losses include "tail" and
Total Switching Loss — 3.4 — mJ diode reverse recovery
Input Capacitance — 670 — VGE = 0V
Output Capacitance — 100 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 10 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 IF = 12A
Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During t
b
— 116 — TJ = 125°C 17
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 23Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-150
Pulse width 5.0µs,
single shot.
CPV363MF
f, Frequency (kHz)
Load Current (A)
Total Output Power (kW )
CE
C
I , Collector-to-E mitter Current (A)
, Collector-to-Em
er Voltag e (V)
C
I , Collector-to-Emitter Current (A)
, Gate-to-Em
er Voltage (V)
GE
To Order
Next Data SheetIndex
Previous Datasheet
12
9
6
T = 90°C
C
3
T = 125°C
J
Power Factor = 0.8
Modulation Depth = 0.8
V = 60% of Rated Voltage
CC
0
0.1 1 10 100
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
1000
1000
3.7
2.8
1.9
0.9
0
S
100
10
1
1 10
V
Fig. 2 - Typical Output Characteristics
T = 25°C
J
T = 150°C
J
V = 15V
G E
20µs P ULS E W IDTH
itt
C-151
100
T = 150°C
J
10
T = 25°C
J
1
V = 100V
CC
0.1
5 10 15 20
V
5µs PULSE WIDTH
itt
Fig. 3 - Typical Transfer Characteristics
Loading...