International Rectifier CPV362MK Datasheet

Short Circuit Rated UltraFast IGBTIGBT SIP MODULE
Next Data SheetIndex
Previous Datasheet
To Order
Features
• Short Circuit Rated - 10µs @ 125°C, VGE = 15V • Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
Q1
3
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
Q2
6
Product Summary
Output Current in a Typical 20 kHz Motor Drive
3.5 A
per phase (1.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
RMS
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium.
D1 D3 D5
D2 D4 D6
7 13 19
PD - 5.032
CPV362MK
1
Q3
9
Q4
12
Q5
15
10 164
Q6
18
These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current, each IGBT 5.7 IC @ TC = 100°C Continuous Collector Current, each IGBT 3.0 I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 3.4 I
FM
t
sc
V
GE
V
ISOL
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1 T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 11 A Clamped Inductive Load Current 11
Diode Maximum Forward Current 11 Short Circuit Withstand Time 10 µs Gate-to-Emitter Voltage ± 20 V Isolation Voltage, any terminal to case, 1 min. 2500 V
Operating Junction and -40 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55 - 0.8 N•m)
RMS
Thermal Resistance
Parameter Typ. Max. Units
R
(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction 5.5
θJC
R
θJC
R
(MODULE) Case-to-Sink, flat, greased surface 0.1
θCS
Wt Weight of module 20 (0.7) g (oz)
C-963
Revision 2
CPV362MK
Next Data SheetIndex
Previous Datasheet
To Order
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)CES
V
CE(on)
V
GE(th)
V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA
/T
Temp. Coeff. of Breakdown Voltage 0.37 V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage 2.3 3.5 IC = 3.0A VGE = 15V
2.7 V IC = 5.7A See Fig. 2, 5 — 2.2 IC = 3.0A, TJ = 150°C
Gate Threshold Voltage 3.0 5.5 VCE = VGE, IC = 250µA
/TJTemperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 1.9 3.3 S VCE = 100V, IC = 6.0A Zero Gate Voltage Collector Current 250 µA VGE = 0V, VCE = 600V
1700 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop 1.4 1.7 V IC = 8.0A See Fig. 13
1.3 1.6 IC = 8.0A, TJ = 150°C
Gate-to-Emitter Leakage Current ±500 nA VGE = ±20V
Total Gate Charge (turn-on) 17 26 IC = 6.0A Gate - Emitter Charge (turn-on) 4.3 6.8 nC VCC = 400V Gate - Collector Charge (turn-on) 6.4 11 See Fig. 8 Turn-On Delay Time 60 TJ = 25°C Rise Time 20 ns IC = 3.0A, VCC = 480V Turn-Off Delay Time 110 220 VGE = 15V, RG = 50 Fall Time 50 110 Energy losses include "tail" and Turn-On Switching Loss 0.10 diode reverse recovery. Turn-Off Switching Loss 0.10 mJ See Fig. 9, 10, 11, 18 Total Switching Loss 0.20 0.27 Short Circuit Withstand Time 10 µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50, V Turn-On Delay Time 60 TJ = 150°C, See Fig. 9, 10, 11, 18 Rise Time 17 ns IC = 3.0A, VCC = 480V Turn-Off Delay Time 230 VGE = 15V, RG = 50 Fall Time 130 Energy losses include "tail" and Total Switching Loss 0.29 mJ diode reverse recovery. Input Capacitance 350 VGE = 0V Output Capacitance 50 pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance 4.7 ƒ = 1.0MHz Diode Reverse Recovery Time 37 55 ns TJ = 25°C See Fig.
55 90 TJ = 125°C 14 IF = 8.0A
Diode Peak Reverse Recovery Current 3.5 5.0 A TJ = 25°C See Fig.
4.5 8.0 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge 65 138 nC TJ = 25°C See Fig.
124 360 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery 240 A/µs TJ = 25°C See Fig.
During t
b
210 TJ = 125°C 17
CPK
< 500V
Notes:
Repetitive rating; VGE=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 50, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
C-964
Pulse width 5.0µs,
single shot.
CPV362MK
CE
C
I , Collector-to-Emitter Current (A)
, Collector-to-Em
er Voltage (V)
C
I , Collector-to-Emitter Current (A)
, Gate-to-Em
er Voltage (V)
GE
To Order
Next Data SheetIndex
Previous Datasheet
5.0
4.0
3.0
2.0
Load Current (A)
T = 90°C
C
T = 125°C
J
1.0
Power Factor = 0.8 Modulation Depth = 0.8 V = 60% of Rated Voltage
CC
0.0 0 1 10 100
f, Frequency (kHz)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
100
100
1.6
1.2
0.9
0.6
0.3
0
Total Output Power (kW)
10
1
0.1
0.1 1 10
V
Fig. 2 - Typical Output Characteristics
T = 25°C
J
T = 150°C
J
V = 15V
G E
20µs PU LS E WIDTH
itt
C-965
10
T = 150°C
J
T = 25°C
J
V = 100 V
CC
1
5 10 15 20
V
5µs PUL SE WIDTH
itt
Fig. 3 - Typical Transfer Characteristics
+ 5 hidden pages