International Rectifier CPU165MU Datasheet

PD - 5.029

6,7

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CPU165MU

IGBT SIP MODULE

Features

Ultra-Fast IGBT

1,2

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve

Product Summary

Q1

4
5

Q2

9

D1

D2

Output Current in a Typical 20 kHz Motor Drive

10 A

with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,

RMS

11,12

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.

IMS-1

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current, each IGBT 33
IC @ TC = 100°C Continuous Collector Current, each IGBT 17
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 15
I

FM

V

GE

V

ISOL

PD @ TC = 25°C Maximum Power Dissipation, each IGBT 83 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 33
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 100 A
Clamped Inductive Load Current 100

Diode Maximum Forward Current 100
Gate-to-Emitter Voltage ±20 V
Isolation Voltage, any terminal to case, 1 minute 2500 V

Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m)

RMS

Thermal Resistance

R

(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 1.5

θJC

R

(DIODE) Junction-to-Case, each diode, one diode in conduction — 2.0 °C/W

θJC

R

(MODULE) Case-to-Sink,flat,greased surface 0.1 —

θCS

Wt Weight of module 20 (0.7) — g (oz)

Parameter Typ. Max. Units

Revision 1

C-733

CPU165MU

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.60 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.8 2.3 IC = 17A VGE = 15V

— 2.2 — V IC = 33A See Fig. 2, 5
— 1.6 — IC = 17A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 16 24 — S VCE = 100V, IC = 27A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 6500 VGE = 0V, VCE = 600V, TJ = 150°C

Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A See Fig. 13

— 1.2 1.5 IC = 25A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V

Total Gate Charge (turn-on) — 108 140 IC = 27A
Gate - Emitter Charge (turn-on) — 17 21 nC VCC = 400V
Gate - Collector Charge (turn-on) — 52 70 See Fig. 8
Turn-On Delay Time — 23 — TJ = 25°C
Rise Time — 28 — ns IC = 27A, VCC = 480V
Turn-Off Delay Time — 100 200 VGE = 15V, RG = 5.0Ω
Fall Time — 45 140 Energy losses include "tail" and
Turn-On Switching Loss — 0.76 — diode reverse recovery.
Turn-Off Switching Loss — 0.26 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 1.0 2.0
Turn-On Delay Time — 24 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 27 — ns IC = 27A, VCC = 480V
Turn-Off Delay Time — 180 — VGE = 15V, RG = 5.0Ω
Fall Time — 130 — Energy losses include "tail" and
Total Switching Loss — 3.7 — mJ diode reverse recovery.
Input Capacitance — 2900 — VGE = 0V
Output Capacitance — 330 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 41 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C See Fig.

— 105 160 TJ = 125°C 14 IF = 25A

Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C See Fig.

— 8.0 15 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C See Fig.

— 420 1200 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig.

During t

b

— 160 — TJ = 125°C 17

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 20 )

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 5.0Ω, ( See fig. 19 )

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-734

Pulse width 5.0µs,

single shot.

CPU165MU

f, Frequency (kHz)

Load Current (A)

Total Output Power (kW)

20

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

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24

16

8

T = 90°C

C

T = 125°C

J

Power Factor = 0.8
Modulation Depth = 0 .8
V = 60% of Rated Voltage

CC

0

0.1 1 10 100

Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave

1000

1000

7.4

5.0

S

2.5

0

100

10

1

0.1 1 1 0

V

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 150°C

J

V = 15V

G E

20µs P UL SE WIDTH

itt

C-735

100

T = 150°C

J

T = 25°C

J

10

C

I , Collector-to-Emitter Current (A)

1

5 10 15

V , Gate-to-Emitter Voltage (V)

GE

V = 100V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics