International Rectifier CPU165MM Datasheet

Preliminary Data Sheet PD - 5.030

6,7

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CPU165MM

Short Circuit Rated Fast IGBTIGBT SIP MODULE

Features

• Short Circuit Rated - 10µs @ 125°C, VGE = 15V •
Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for medium operating frequency (1 to
10kHz).

Product Summary

Output Current in a Typical 5.0 kHz Motor Drive

14 A

with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,

RMS

Power Factor 0.8, Modulation Depth 80%.

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.

These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current, each IGBT 42
IC @ TC = 100°C Continuous Collector Current, each IGBT 23
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 15
I

FM

t

sc

V

GE

V

ISOL

PD @ TC = 25°C Maximum Power Dissipation, each IGBT 83 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 33
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 120 A
Clamped Inductive Load Current 120

Diode Maximum Forward Current 120
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Isolation Voltage, any terminal to case, 1 minute 2500 V

Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55 - 0.8 N•m)

1,2

Q1

4
5

Q2

9

D1

D2

11,12

IMS-1

RMS

Thermal Resistance

R

(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 1.5

θJC

R

(DIODE) Junction-to-Case, each diode, one diode in conduction — 2.0 °C/W

θJC

R

(MODULE) Case-to-Sink, flat, greased surface 0.1 —

θCS

Wt Weight of module 20 (0.7) — g (oz)

Parameter Typ. Max. Units

Revision 2

C-407

CPU165MM

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

Refer to Section D for the following:
Package Outline 4 - IMS-1 Package (10 pins) Section D - page D-13

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

/∆T

Temp.Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.8 2.0 IC = 35A VGE = 15V

— 2.3 — V IC = 60A
— 2.0 — IC = 35A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 11 20 — S VCE = 100V, IC = 35A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 6500 VGE = 0V, VCE = 600V, TJ = 150°C

Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A

— 1.2 1.5 IC = 25A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V

Total Gate Charge (turn-on) — 120 180 IC = 35A
Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V
Gate - Collector Charge (turn-on) — 40 60
Turn-On Delay Time — 78 — TJ = 25°C
Rise Time — 110 — ns IC = 35A, VCC = 480V
Turn-Off Delay Time — 340 510 VGE = 15V, RG = 5.0Ω
Fall Time — 265 400 Energy losses include "tail" and
Turn-On Switching Loss — 2.1 — diode reverse recovery.
Turn-Off Switching Loss — 4.0 — mJ
Total Switching Loss — 6.1 9.5
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 5.0Ω, V
Turn-On Delay Time — 80 — TJ = 150°C,
Rise Time — 110 — ns IC = 35A, VCC = 480V
Turn-Off Delay Time — 610 — VGE = 15V, RG = 5.0Ω
Fall Time — 440 — Energy losses include "tail" and
Total Switching Loss — 9.4 — mJ diode reverse recovery.
Input Capacitance — 2900 — VGE = 0V
Output Capacitance — 230 — pF VCC = 30V
Reverse Transfer Capacitance — 30 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C

— 105 160 TJ = 125°C IF = 25A

Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C

— 8.0 15 TJ = 125°C VR = 200V

Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C

— 420 1200 TJ = 125°C di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C

During t

b

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.

— 160 — TJ = 125°C

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 5.0Ω.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-408

Pulse width 5.0µs,

single shot.

CPK

< 500V