International Rectifier CPU165MK Datasheet
Preliminary Data Sheet PD - 5.036
6,7
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CPU165MK
IGBT SIP MODULE
Features
Short Circuit Rated UltraFast IGBT
1,2
• Short Circuit Rated - 10µs @ 125°C, VGE = 15V •
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
Q1
4
5
Q2
9
D1
D2
Product Summary
Output Current in a Typical 20 kHz Motor Drive
10 A
with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
RMS
Power Factor 0.8, Modulation Depth 80%.
11,12
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-1
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current, each IGBT 33
IC @ TC = 100°C Continuous Collector Current, each IGBT 17
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 15
I
FM
t
sc
V
GE
V
ISOL
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 83 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 33
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 100 A
Clamped Inductive Load Current 100
Diode Maximum Forward Current 100
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Isolation Voltage, any terminal to case, 1 min. 2500 V
Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 1.5
θJC
R
(DIODE) Junction-to-Case, each diode, one diode in conduction — 2.0 °C/W
θJC
R
(MODULE) Case-to-Sink, flat, greased surface 0.1 —
θCS
Wt Weight of module 20 (0.7) — g (oz)
C-961
Revision 2
RMS
CPU165MK
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
/∆T
Temp. Coeff. of Breakdown Voltage — 0.60 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.1 2.7 IC = 30A VGE = 15V
— 2.6 — V IC = 52A
— 2.3 — IC = 30A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemp. Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 9.8 17 — S VCE = 100V, IC = 30A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 6500 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A
— 1.2 1.5 IC = 25A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V
Total Gate Charge (turn-on) — 120 200 IC = 30A
Gate - Emitter Charge (turn-on) — 27 42 nC VCC = 400V
Gate - Collector Charge (turn-on) — 44 73
Turn-On Delay Time — 74 — TJ = 25°C
Rise Time — 100 — ns IC = 30A, VCC = 480V
Turn-Off Delay Time — 260 460 VGE = 15V, RG = 5.0Ω
Fall Time — 190 290 Energy losses include "tail" and
Turn-On Switching Loss — 1.9 — diode reverse recovery.
Turn-Off Switching Loss — 2.6 — mJ
Total Switching Loss — 4.5 7.0
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 5.0Ω, V
Turn-On Delay Time — 77 — TJ = 150°C,
Rise Time — 100 — ns IC = 30A, VCC = 480V
Turn-Off Delay Time — 530 — VGE = 15V, RG = 5.0Ω
Fall Time — 360 — Energy losses include "tail" and
Total Switching Loss — 7.3 — mJ diode reverse recovery.
Input Capacitance — 2900 — VGE = 0V
Output Capacitance — 220 — pF VCC = 30V
Reverse Transfer Capacitance — 30 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C
— 105 160 TJ = 125°C IF = 25A
Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C
— 8.0 15 TJ = 125°C VR = 200V
Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C
— 420 1200 TJ = 125°C di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C
During t
b
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
— 160 — TJ = 125°C
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 5.0Ω.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
CPK
< 500V
Refer to Section D - page D-13 for Package Outline 4 - IMS-1 Package (10 pins)
C-962
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