International Rectifier CPU165MF Datasheet

PD - 5.028

6,7

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CPU165MF

IGBT SIP MODULE

Features

Fast IGBT

1,2

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for medium operating frequency (1 to 10kHz)
See Fig. 1 for Current vs. Frequency curve

Product Summary

Q1

4
5

Q2

9

D1

D2

Output Current in a Typical 5.0 kHz Motor Drive

14 A

with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,

RMS

11,12

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.

IMS-1

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current, each IGBT 42
IC @ TC = 100°C Continuous Collector Current, each IGBT 23
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 15
I

FM

V

GE

V

ISOL

PD @ TC = 25°C Maximum Power Dissipation, each IGBT 83 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 33
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 120 A
Clamped Inductive Load Current 120

Diode Maximum Forward Current 120
Gate-to-Emitter Voltage ±20 V
Isolation Voltage, any terminal to case, 1 min. 2500 V

Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m)

RMS

Thermal Resistance

R

(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 1.5

θJC

R

(DIODE) Junction-to-Case, each diode, one diode in conduction — 2.0 °C/W

θJC

R

(MODULE) Case-to-Sink, flat, greased surface 0.1 —

θCS

Wt Weight of module 20 (0.7) — g (oz)

Parameter Typ. Max. Units

Revision 1

C-133

CPU165MF

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

/∆T

Temp. Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.3 1.5 IC = 23A VGE = 15V

— 1.7 — V IC = 42A See Fig. 2, 5
— 1.4 — IC = 23A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 21 30 — S VCE = 100V, IC = 39A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 6500 VGE = 0V, VCE = 600V, TJ = 150°C

Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A See Fig. 13

— 1.2 1.5 IC = 25A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V

Total Gate Charge (turn-on) — 84 100 IC = 39A
Gate - Emitter Charge (turn-on) — 20 25 nC VCC = 400V
Gate - Collector Charge (turn-on) — 51 67 See Fig. 8
Turn-On Delay Time — 24 — TJ = 25°C
Rise Time — 50 — ns IC = 39A, VCC = 480V
Turn-Off Delay Time — 270 540 VGE = 15V, RG = 5.0Ω
Fall Time — 210 360 Energy losses include "tail" and
Turn-On Switching Loss — 1.1 — diode reverse recovery
Turn-Off Switching Loss — 2.1 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 3.2 5.4
Turn-On Delay Time — 25 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 49 — ns IC = 39A, VCC = 480V
Turn-Off Delay Time — 440 — VGE = 15V, RG = 5.0Ω
Fall Time — 410 — Energy losses include "tail" and
Total Switching Loss — 5.8 — mJ diode reverse recovery
Input Capacitance — 3000 — VGE = 0V
Output Capacitance — 340 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 40 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C See Fig.

— 105 160 TJ = 125°C 14 IF = 25A

Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C See Fig.

— 8.0 15 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C See Fig.

— 420 1200 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig.

During t

b

— 160 — TJ = 125°C 17

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 20 )

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 5.0Ω, ( See fig. 19 )

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-134

Pulse width 5.0µs,

single shot.

CPU165MF

f, Frequency (kH z)

Load Current (A)

Total Output Power (kW )

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

C

I , Collector-to-Emitter Current (A)

,

GE

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30

20

10

T = 90°C

C

T = 125°C

J

Power Factor = 0.8
Modulation Depth = 0.8
V = 60% of Rated Voltage

CC

0

0.1 1 10 100

Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave

1000

T = 25°C

J

1000

T = 2 5°C

J

9.3

6.2

3.1

0

T = 1 50°C

J

S

100

10

1

0.1 1 1 0

V

Fig. 2 - Typical Output Characteristics

T = 1 50°C

J

V = 15 V

G E

20µs P UL SE W IDTH

itt

C-135

100

10

V = 100V

CC

1

5 10 15 20

V

Gate-to-Em itter Voltage (V)

5µs PULS E W IDTH

Fig. 3 - Typical Transfer Characteristics