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i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Revision History
DateRevisionDescription
January 2010001• Initial release of this document.
April 2010002
August 2010003
• Added information for the Intel® Celeron® Processor P4500 and P4505 Series.
• Corrected first bullet in Section 2.1.1 to “No support for mixed ECC and non-ECC DIMM
configurations.”
®
• Added information for the Intel
• Removed all references to Celeron® Processor P4500 since it is a PGA package and does not
relate to this document (was included by error in last revision).
• CMD mode for DDR3 is restated to 1n instead of 1n and 2n
CoreTM i7-660UE, i3-330E and Celeron® Processor U3405
Intel® Core
August 2010Datasheet Addendum
Document Number: 323178-0037
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Introduction and Features Summary
1Introduction and Features
Summary
1.1Introduction
This Datasheet Addendum is a supplement to the Intel® CoreTM i7-600, i5-500 and i3-
300 Mobile Processor Series Datasheet. It contains the additional DC and AC electrical
specifications, signal integrity, differential signaling specifications, pinout and signal
definitions, interface functional descriptions, additional feature information and
configuration registers pertinent to the implementation and operation of the Intel
TM
Core
Processor P4505, U3405 Series on its respective platform.
Intel
Processor P4505, U3405 Series is the next generation of 64-bit, multi-core mobile
processor built on a 32- nanometer process technology. Throughout this document,
Intel
Processor P4505, U3405 Series may be referred to as simply the processor. The
processor is designed for a two-chip platform as opposed to the traditional three-chip
platforms (processor, GMCH, and ICH). The two-chip platform consists of a processor
and the Platform Controller Hub (PCH) and enables higher performance, lower cost,
easier validation, and improved x-y footprint. The PCH may also be referred to as
Mobile Intel® 5 Series Chipset (formerly Ibex Peak-M). Intel
620LE/UE, i7-610E, i5-520E, i3-330E and Intel
Series is designed for the Intel
offered in a BGA1288 package.
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron®
®
®
Core
Core
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron®
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron®
®
®
CoreTM i7 processor based low-power platform and is
Celeron® Processor P4505, U3405
®
Core
TM
i7-660UE, i7-
®
Included in this family of processors is an integrated graphics and memory controller
die on the same package as the processor core die. This two-chip solution of a
processor core die with an integrated graphics and memory controller die is known as a
multi-chip package (MCP) processor.
Note:Integrated graphics and memory controller die is built on 45-nanometer process
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Introduction and Features Summary
1.3Package
The Intel Core i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel Celeron
Processor P4505, U3405 Series are available on a 34 x 28 mm BGA package
(BGA1288).
Note:Although the BGA1288 package is shared with Intel
UM/LM, i5-540M, i5-520M/UM and i5-430M Processor Series they are not ball-out
compatible.
®
CoreTM i7-640UM/LM, i7-620M/
Intel® Core
August 2010Datasheet Addendum
Document Number: 323178-00311
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
1.4Terminology
TermDescription
BLTBlock Level Transfer
CRTCathode Ray Tube
DDR3Third generation Double Data Rate SDRAM memory technology
DPDisplayPort*
DMADirect Memory Access
DMIDirect Media Interface
DTSDigital Thermal Sensor
ECCError Correction Code
eDP*Embedded DisplayPort*
®
Intel
DPSTIntel® Display Power Saving Technology
Enhanced Intel
SpeedStep
Execute Disable Bit
EUExecution Unit
(G)MCHLegacy component - Graphics Memory Controller Hub.
GPUGraphics Processing Unit
64 Technology64-bit memory extensions to the IA-32 architecture.
®
FDIIntel® Flexible Display Interface.
®
TXTIntel® Trusted Execution Technology
®
Virtualization
Introduction and Features Summary
Technology that provides power management capabilities to laptops.
The Execute Disable bit allows memory to be marked as executable or nonexecutable, when combined with a supporting operating system. If code
attempts to run in non-executable memory the processor raises an error to the
operating system. This feature can prevent some classes of viruses or worms
that exploit buffer overrun vulnerabilities and can thus help improve the overall
security of the system. See the Intel® 64 and IA-32 Architectures Software Developer's Manuals for more detailed information.
The legacy I/O Controller Hub component that contains the main PCI interface,
LPC interface, USB2, Serial ATA, and other I/O functions. It communicates with
the legacy (G)MCH over a proprietary interconnect called DMI.
Processor virtualization which when used in conjunction with Virtual Machine
Monitor software enables multiple, robust independent software environments
inside a single platform.
Low Voltage Differential Signaling
A high speed, low power data transmission standard used for display connections
to LCD panels.
Non-Critical to Function: NCTF locations are typically redundant ground or noncritical reserved, so the loss of the solder joint continuity at end of life co nditions
will not affect the overall product functionality.
Platform Controller Hub. The new 2009 chipset with centralized platform
capabilities including the main I/O interfaces along with display connectivity,
audio features, power management, manageability, security and storage
features. The PCH may also be referred to using the code name Ibex Peak.
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Introduction and Features Summary
TermDescription
PEG
ProcessorThe 64-bit, single-core or multi-core component (package)
Processor Core
Rank
SCISystem Control Interrupt. Used in ACPI protocol.
Storage Conditions
TACThermal Averaging Constant
TDPThermal Design Power
TOMTop of Memo ry
TTMTime-To-Market
V
CC
V
SS
V
AXG
V
TT
V
DDQ
VLDVariable Length Decoding
x1Refers to a Link or Port with one Physical Lane
x4Refers to a Link or Port with four Physical Lanes
x8Refers to a Link or Port with eight Physical Lanes
x16Refers to a Link or Port with sixteen Physical Lanes
PCI Express* Graphics. External Graphics using PCI Express Architecture. A
high-speed serial interface whose configuration is software compatible with the
existing PCI specifications.
The term “processor core” refers to Si die itself which can contain multiple
execution cores. Each execution core has an instruction cache, dat a cache, and
256-KB L2 cache. All execution cores share the L3 cache.
A unit of DRAM corresponding four to eight devices in parallel, ignoring ECC.
These devices are usually, but not always, mounted on a single side of a SODIMM.
A non-operational state. The processor may be installed in a platform, in a tray,
or loose. Processors may be sealed in packaging or exposed to free air. Under
these conditions, processor landings should not be connected to any supply
voltages, have any I/Os biased or receive any clocks. Upon exposur e to “free air”
(i.e., unsealed packaging or a device removed from packaging material) the
processor must be handled in accordance with moisture sensitivity labeling
(MSL) as indicated on the packaging material.
Processor core power supply
Processor ground
Graphics core power supply
L3 shared cache, memory controller, and processor I/O power rail
DDR3 power rail
1.5Related Documents
Refer to the documents in Table 1 for additional information.
Table 1.Processor Documents
Document
Intel® CoreTM i7-600, i5-500 and i3-300 Mobile Processor Series Datasheethttp://www.intel.com
®
Intel
Celeron
Update
Intel® Core
August 2010Datasheet Addendum
Document Number: 323178-00313
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
TM
Core
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel®
®
Processor P4505, U3405 Series Datasheet Addendum Specification
Document Number/
Location
http://www.intel.com
Table 2.PCH Documents
Introduction and Features Summary
Intel® 5 Series Chipset and Intel® 3400 Series Chipset Datasheethttp://www.intel.com
Table 3.Public Specifications
Advanced Configuration and Power Interface Specification 3.0http://www.acpi.info/
PCI Local Bus Specification 3.0
PCI Express Base Specification 2.0http://www.pcisig.com
DDR3 SDRAM Specificationhttp://www.jedec.org
DisplayPort Specificationhttp://www.vesa.org
®
Intel
64 and IA-32 Architectures Software Developer's Manuals
Volume 1: Basic Architecture253665
Volume 2A: Instruction Set Reference, A-M 253666
Volume 2B: Instruction Set Reference, N-Z 253667
Volume 3A: System Programming Guide 253668
Volume 3B: System Programming Guide 253669
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Interfaces
2Interfaces
This chapter describes the interfaces supported by the processor.
2.1System Memory Interface
2.1.1System Memory Technology Supported
The Integrated Memory Controller (IMC) supports DDR3 protocols with two,
independent, 64-bit wide channels each accessing one DIMM. It supports:
— ECC and non-ECC un-buffered DIMMs. No support for mixed ECC and non -ECC
DIMM configurations.
DDR3 Data Transfer Rates:
— 800 MT/s (PC3-6400), and 1066 MT/s (PC3-8500)
•DDR3 DIMM Modules:
— Raw Card A – single rank x8 unbuffered non-ECC
— Raw Card B – dual rank x8 unbuffered non-ECC
— Raw Card C – single rank x16 unbuffered non-ECC
— Raw Card D – single rank x8 unbuffered ECC
— Raw Card E – dual rank x8 unbuffered ECC
— Raw Card F - dual rank x16 unbuffered non-ECC
• DDR3 DRAM Device Technology:
— Standard 1-Gb, and 2-Gb technologies and addressing are supported for x16
and x8 devices. There is no support for memory modules with different
technologies or capacities on opposite sides of the same memory module. If
one side of a memory module is populated, the other side is either identical or
empty.
Table 4.Supported DIMM Module Configurations (Sheet 1 of 2)
Raw
Card
Version
A
B
C
Intel® Core
August 2010Datasheet Addendum
Document Number: 323178-00315
DIMM
Capacity
512 MB512 Mb64 M x 88113/1088K
1 GB1 Gb128 M x 88114/1088K
2 GB2 Gb256M x 88115/1088K
1 GB512 Mb64 M x 816213/1088K
2 GB1 Gb128 M x 816214/1088K
4 GB2 Gb256 M x 816215/1088K
256MB512 Mb32 M x 164112/1088K
512 MB1 Gb64 M x 84113/1088K
1 GB2 Gb128 M x 164114/1088K
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
DRAM
Device
Technology
DRAM
Organization
# of
DRAM
Devices
# of
Physical
Device
Ranks
# of Row/
Col
Address
Bits
# of
Banks
Inside
DRAM
Page
Size
Table 4.Supported DIMM Module Configurations (Sheet 2 of 2)
Interfaces
Raw
Card
Version
D
E
F
DIMM
Capacity
512 MB512 Mb64 M x 89113/1088K
1 GB1 Gb128 M x 89114/1088K
2 GB2 Gb256 M x 89115/1088K
1 GB512 Mb64M x 818213/1088K
2 GB1 Gb128 M x 818214/1088K
4 GB2 Gb256 M x 818215/1088K
512 MB512 Mb32 M x 168212/1088K
1 GB1 Gb64 M x 168213/1088K
2 GB2 Gb128 M x 168214/1088K
DRAM
Device
Technology
DRAM
Organization
# of
DRAM
Devices
Physical
Device
2.1.2System Memory Timing Support
The IMC supports the following DDR3 Speed Bin, CAS Write Latency (CWL), and
command signal mode timings on the main memory interface:
• tCL = CAS Latency
• tRCD = Activate Command to READ or WRITE Command delay
• tRP = PRECHARGE Command Period
• CWL = CAS Write Latency
• Command Signal modes = 1n indicates a new command may be issued every
clock. Command launch mode programming depends on the transfer rate and
memory configuration.
# of
Ranks
# of Row/
Col
Address
Bits
# of
Banks
Inside
DRAM
Page
Size
Table 5.DDR3 System Memory Timing Support
Transfer
Rate
(MT/s)
80066651n 1
1066
NOTES:
1.System Memory timing support is based on availability and is subject to change.
tCL
(tCK)
777
888
tRCD
(tCK)
tRP
(tCK)
CWL
(tCK)
CMD ModeNotes
61n 1
2.1.3System Memory Organization Modes
The IMC supports two memory organization modes, single-channel and dual-channel.
Depending upon how the DIMM Modules are populated in each memory channel, a
number of different configurations can exist.
2.1.3.1Single-Channel Mode
In this mode, all memory cycles are directed to a single-channel. Single-channel mode
is used when either Channel A or Channel B DIMM connectors are populated in any
order, but not both.
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Interfaces
CH BCH A
CH BCH A
BB
C
BB
C
B
B
C
Non interleaved
access
Dual channel
interleaved access
TOM
B – The largest physical memory amount of the smaller size m em ory module
C – The remaining physical mem ory amount of the larger size m em ory module
The IMC supports Intel® Flex Memory Technology Mode. This mode combines the
advantages of the Dual-Channel Symmetric (Interleaved) and Dual-Channel
Asymmetric Modes. Memory is divided into a symmetric and a asymmetric zone. The
symmetric zone starts at the lowest address in each channel and is contiguous until the
asymmetric zone begins or until the top address of the channel with the smaller
capacity is reached. In this mode, the system runs with one zone of dual-channel mode
and one zone of single-channel mode, simultaneously, across the whole memory array.
Figure 2.Intel
®
Flex Memory Technology Operation
2.1.3.2.1Dual-Channel Symmetric Mode
Dual-Channel Symmetric mode, also known as interleaved mode, provides maximum
performance on real world applications. Addresses are ping-ponged between the
channels after each cache line (64-byte boundary). If there are two requests, and the
second request is to an address on the opposite channel from the first, that request can
be sent before data from the first request has returned. If two consecutive cache lines
are requested, both may be retrieved simultaneously, since they are ensured to be on
opposite channels. Use Dual-Channel Symmetric mode when both Channel A and
Channel B DIMM connectors are populated in any order, with the total amount of
memory in each channel being the same.
When both channels are populated with the same memory capacity and the boundary
between the dual channel zone and the single channel zone is the top of memory, IMC
operates completely in Dual-Channel Symmetric mode.
Note:The DRAM device technology and width may vary from one channel to the other.
2.1.3.2.2Dual-Channel Asymmetric Mode
This mode trades performance for system design flexibility. Unlike the previous mode,
addresses start at the bottom of Channel B and stay there until the end of the highest
Intel® Core
August 2010Datasheet Addendum
Document Number: 323178-00317
rank in Channel B, and then addresses continue from the bottom of Channel A to the
top. Real world applications are unlikely to make requests that alternate between
addresses that sit on opposite channels with this memory organization, so in most
cases, bandwidth is limited to a single channel.
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Interfaces
CH. B
CH. A
CH. B
CH. A
CH. B
CH. A
CL
0
Top of
Memory
CL
0
CH. A
CH. B
CH.B-top
DRB
Dual Channel Interleaved
(memory sizes must match)
Dual Channel Asymmetric
(memory sizes can differ)
Top of
Memory
This mode is used when Intel® Flex Memory Technology is disabled and both Channel A
and Channel B DIMM connectors are populated in any order with the total amount of
memory in each channel being different.
Figure 3.Dual-Channel Symmetric (Interleaved) and Dual-Channel Asymmetric Modes
2.1.4Rules for Populating Memory Slots
2.1.5Technology Enhancements of Intel® Fast Memory Access
In all modes, the frequency of system memory is the lowest frequency of all memory
modules placed in the system, as determined through the SPD registers on the
memory modules. The system memory controller supports only one DIMM connector
per channel.For dual-channel modes both channels must have an DIMM connector
populated and for single-channel mode only a single-channel must have an DIMM
connector populated.
®
(Intel
The following sections describe the Just-in-Time Scheduling, Command Overlap, and
Out-of-Order Scheduling Intel
FMA)
®
FMA technology enhancements.
The memory controller has an advanced command scheduler where all pending
requests are examined simultaneously to determine the most efficient request to be
issued next. The most efficient request is picked from all pending requests and issued
to system memory Just-in-Time to make optimal use of Command Overlapping. Thus,
instead of having all memory access requests go individually through an arbitration
mechanism forcing requests to be executed one at a time, they can be started without
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Interfaces
interfering with the current request allowing for concurrent issuing of requests. This
allows for optimized bandwidth and reduced latency while maintaining appropriate
command spacing to meet system memory protocol.
2.1.5.2Command Overlap
Command Overlap allows the insertion of the DRAM commands between the Activate,
Precharge, and Read/Write commands normally used, as long as the inserted
commands do not affect the currently executing command. Multiple commands can be
issued in an overlapping manner, increasing the efficiency of system memory protocol.
2.1.5.3Out-of-Order Scheduling
While leveraging the Just-in-Time Scheduling and Command Overlap enhancements,
the IMC continuously monitors pending requests to system memory for the best use of
bandwidth and reduction of latency. If there are multiple requests to the same open
page, these requests would be launched in a back to back manner to make optimum
use of the open memory page. This ability to reorder requests on the fly allows the IMC
to further reduce latency and increase bandwidth efficiency.
2.1.6DRAM Clock Generation
T wo differential clock pairs for every supported DIMM. There are total of four clock pairs
driven directly by the processor to two DIMMs.
2.1.7DDR3 On-Die Termination
On-Die T ermination (OD T) is a feature that allows a DRAM device to turn on/off internal
termination resistance for each DQ, DQS/DQS#, and DM signal via the ODT control pin.
The ODT feature improves signal integrity of the memory channel by allowing the
DRAM controller to independently turn on or off the termination resistance for any or all
DRAM devices themselves instead of on the motherboard.
The IMC drives out the required ODT signals, based on the memory configuration and
which rank is being written to or read from, to the DRAM devices on a targeted DIMM
module rank to enable or disable their termination resistance.
2.2PCI Express* Interface
This section describes the PCI Express* interface capabilities of the processor. See the
PCI Express Base Specification for further details on PCI Express.
The processor has two options for PCI Express controllers available:
• 1 x16 PCI Express Port
or
• 2 x8 PCI Express Ports
— Enabled with CFG[0] strapping, see Section 2.2.2 and Section 3.2
2.2.1PCI Express* Configuration Mechanism
The PCI Express* link is mapped through a PCI-to-PCI bridge structure.
Intel® Core
August 2010Datasheet Addendum
Document Number: 323178-00319
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Interfaces
PCI-PCI Bridge
representing root
PCI Express port
(Device 1)
PCI-PCI Bridge
representing root
PCI Express port
(Device 6)
PCI Compatible
Host Bridge Device
(Device 0)
PCI Express
Device
PCI Express
Device
Port 0
Port 1
DMI
Figure 4.PCI Express* Related Register Structures in the
®
Intel
Celeron
TM
Core
®
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel®
Processor P4505, U3405 Series
2.2.2PCI Express Port Bifurcation
When bifurcated, the wires which had previously been assigned to lanes 15:8 of the
single x16 primary port (Port 0) are re ass i g ned to lanes 7:0 of the x8 secondary port
(Port 1). This assignment applies whether the lane numbering is reversed or not. The
controls for the secondary port (Port 1) and the associated virtual PCI-to-PCI bridge
can be found in PCI Device 6.
When the primary port is not bifurcated, Device 6 is hidden from the discovery
mechanism used in PCI enumeration, such that configuration of the device is neither
possible nor necessary.
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Signal Description
3Signal Description
This chapter describes the processor signals. They are arranged in functional groups
according to their associated interface or category. Th e following notations are used to
describe the signal type:
NotationsSignal Type
IInput Pin
OOutput Pin
I/OBi-directional Input/Output Pin
The signal description also includes the type of buffer used for the particular signal:
PCI Express interface signals. These signals are compatible with PCI Express 2.0
Signalling Environment AC Specifications and are AC coupled. The buffers are not 3.3V tolerant. Refer to the PCIe specification.
Intel Flexible Display interface signals. These signals are compatible with PCI Express
2.0 Signaling Environment AC Specifications, but are DC co uple d. Th e b uffe rs ar e no t
3.3-V tolerant.
Direct Media Interface signals. These signals are compatible with PCI Express 2.0
Signaling Environment AC Specifications, but are DC coupled. The b uffers are not 3.3 V tolerant.
Analog reference or output. May be used as a threshold voltage or for buffer
compensation.
Signal has no timing relationship with any reference clock.
NOTES:
1.Qualifier for a buffer type.
3.1System Memory Interface
Table 7.Memory Channel A (Sheet 1 of 2)
Signal NameDescription
SA_BS[2:0]
SA_WE#
Intel® Core
August 2010Datasheet Addendum
Document Number: 323178-00321
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Bank Select: These signals define which banks
are selected within each SDRAM rank.
Write Enable Control Signal: Used with
SA_RAS# and SA_CAS# (along with SA_CS#) to
define the SDRAM Commands.
Direction/Buffer
Type
O
DDR3
O
DDR3
Table 7.Memory Channel A (Sheet 2 of 2)
Signal Description
Signal NameDescription
SA_RAS#
SA_CAS#
SA_DM[7:0]
SA_DQS[8]
SA_DQS[7:0]
SA_DQS#[8]
SA_DQS#[7:0]
SA_DQ[71:64]
SA_DQ[63:0]
SA_MA[15:0]
SA_CK[1:0]
SA_CK#[1:0]
SA_CKE[1:0]
SA_CS#[1:0]
SA_ODT[1:0]On Die Termination: Active Termination Control.
RAS Control Signal: Used with SA_CAS# and
SA_WE# (along with SA_CS#) to define the SRAM
Commands.
CAS Control Signal: Used with SA_RAS# and
SA_WE# (along with SA_CS#) to define the SRAM
Commands.
Data Mask: These signals are used to mask
individual bytes of data in the case of a partial
write and to interrupt burst writes. When activated
during writes, the corresponding data groups in
the SDRAM are masked. There is one SA _DM[ 7:0]
for every data byte lane.
ECC Data Strobe: SA_DQS[8] is the data strobe
for the ECC check data bits SA_DQ[71:64]
Note: Not required for non-ECC mode
Data Strobes: SA_DQS[7:0] and its complement
signal group make up a differential stro be pair. The
data is captured at the crossing point of
SA_DQS[7:0] and its SA_DQS#[7:0] during read
and write transactions
ECC Data Strobe Complement: SA_DQS#[8] is
the complement strobe for the ECC check data bits
SA_DQ[71:64]
Note: Not required for non-ECC mode
Data Strobe Complements: These are the
complementary strobe signals.
ECC Check Data Bits: SA_DQ[71:64] are the ECC
check data bits for Channel A.
Note: Not required for non-ECC mode
Data Bus: Channel A data signal interface to the
SDRAM data bus.
Memory Address: These signals are used to
provide the multiplexed row and column address
to the SDRAM.
SDRAM Differential Clock: Channel A SDRAM
Differential clock signal pair. The crossing of the
positive edge of SA_CK and the negative edge of
its complement SA_CK# are used to sample the
command and control signals on the SDRAM.
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Signal Description
Table 8.Memory Channel B (Sheet 1 of 2)
Signal NameDescription
SB_BS[2:0]
SB_WE#
SB_RAS#
SB_CAS#
SB_DM[7:0]
SB_DQS[8]
SB_DQS[7:0]
SB_DQS#[8]
SB_DQS#[7:0]
SB_DQ[71:64]
SB_DQ[63:0]
SB_MA[15:0]
SB_CK[1:0]
SB_CK#[1:0]
SB_CKE[1:0]
SB_CS#[1:0]
Bank Select: These signals define which banks
are selected within each SDRAM rank.
Write Enable Control Signal: Used with
SB_RAS# and SB_CAS# (along with SB_CS#) to
define the SDRAM Commands.
RAS Control Signal: Used with SB_CAS# and
SB_WE# (along with SB_CS#) to define the SRAM
Commands.
CAS Control Signal: Used with SB_RAS# and
SB_WE# (along with SB_CS#) to define the SRAM
Commands.
Data Mask: These signals are used to mask
individual bytes of data in the case of a partial
write, and to interrupt burst writes. When
activated during writes, the corresponding data
groups in the SDRAM are masked. There is one
SB_DM[7:0] for every data byte lane.
ECC Data Strobe: SB_DQS[8] is the data strobe
for the ECC check data bits SB_DQ[71:64]
Note: Not required for non-ECC mode
Data Strobes: SB_DQS[7:0] and its complement
signal group make up a differential strobe pair. The
data is captured at the crossing point of
SB_DQS[7:0] and its SB_DQS#[7:0] during read
and write transactions.
ECC Data Strobe Complement: SB_DQS#[8] is
the complement strobe for the ECC check data bits
SB_DQ[71:64]
Note: Not required for non-ECC mode
Data Strobe Complements: These are the
complementary strobe signals.
ECC Check Data Bits: SB_DQ[71:64] are the ECC
check data bits for Channel B
Note: Not required for non-ECC mode
Data Bus: Channel B data signal interface to the
SDRAM data bus.
Memory Address: These signals are used to
provide the multiplexed row and column address
to the SDRAM.
SDRAM Differential Clock: Channel B SDRAM
Differential clock signal pair. The crossing of the
positive edge of SB_CK and the negative edge of
its complement SB_CK# are used to sample the
command and control signals on the SDRAM.
SDRAM Inverted Differential Clock:
SDRAM Differential clock signal-pair complement.
Clock Enable: (1 per rank) Used to:
- Initialize the SDRAMs during power-up.
- Power-down SDRAM ranks.
- Place all SDRAM ranks into and out of self-refresh
during STR.
Chip Select: (1 per rank) Used to select particular
SDRAM components during the active state. T here
is one Chip Select for each SDRAM rank.
Channel B
Direction/Buffer
Type
O
DDR3
O
DDR3
O
DDR3
O
DDR3
O
DDR3
I/O
DDR3
I/O
DDR3
I/O
DDR3
I/O
DDR3
I/O
DDR3
I/O
DDR3
O
DDR3
O
DDR3
O
DDR3
O
DDR3
O
DDR3
Intel® Core
August 2010Datasheet Addendum
Document Number: 323178-00323
TM
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Table 8.Memory Channel B (Sheet 2 of 2)
Signal Description
Signal NameDescription
SB_ODT[1:0]On Die Termination: Active Termination Control.
3.2Reset and Miscellaneous Signals
Table 9.Reset and Miscellaneous Signals
Signal NameDescription
SM_DRAMRST#
CFG[17:0]
DDR3 DRAM Reset: Reset signal from processor
to DRAM devices. One for all channels of DIMMs.
Configuration signals:
The CFG signals have a default value of 1 if not
terminated on the board. Refer to the Platform
Design Guide for pull-down recommendations
when logic low is desired.
i7-660UE, i7-620LE/UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series
Electrical Specifications
4Electrical Specifications
4.1Signal Groups
Signals are grouped by buffer type and similar characteristics as listed in Table 10. The
buffer type indicates which signaling technology and specifications apply to the signals.
All the differential signals, and selected DDR3 and Control Sideband signals have OnDie Termination (ODT) resistors. There are some signals that do not have ODT and
need to be terminated on the board.
Table 10.Mobile Signal Groups
Signal Group
DDR3 Data Signals
Single ended (e)DDR3 Bi-directional SA_DQ[71:0], SB_DQ[71:0]
Differential(f)DDR3 Bi-directional
Power/Ground/Other
Single Ended(z)OtherDBR#, PROC_DETECT, VCAP0, VCAP1, VCAP2
1
Alpha
Group
2
NOTES:
1.Refer to Chapter 3 for signal description details.
2.SA and SB refer to DDR3 Channel A and DDR3 Channel B.
All Control Sideband Asynchronous signals are required to be asserted/deasserted for
at least eight BCLKs in order for the processor to recognize the proper signal state. See
Section 4.2 for the DC specifications.
4.2DC Specifications
The processor DC specifications in this section are defined at the processor
pins, unless noted otherwise. See Chapter 5 for the processor pin listings and
Chapter 3 for signal definitions.
The DC specifications for the DDR3 signals are listed in Table 11.