SEMICONDUCTOR
KRC101M~KRC106M
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO.
KRC101M 4.7 4.7
KRC102M 10 10
KRC103M 22 22
KRC104M 47 47
KRC105M 2.2 47
KRC106M 4.7 47
R1(kή) R2(kή)
EPITAXIAL PLANAR NPN TRANSISTOR
B
A
DIM
MILLIMETERS
F
H
C
J
1
L
EE
2
M
3
N
1. EMITTER
2. COLLECTOR
3. BASE
G
D
K
O
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40 0.15
E
1.27
F
2.30
G
14.00 0.50
H
0.60 MAX
J
1.05
K
1.45
25
L
M
0.80
0.55 MAX
N
O 0.75
_
+
_
+
TO-92M
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
KRC101Mᴕ106M
V
O
KRC101M
KRC102M 30, -10
KRC103M 40, -10
V
KRC104M 40, -10
I
KRC105M 12, -5
KRC106M 20, -5
I
O
P
KRC101Mᴕ106M
D
T
j
T
stg
50 V
20, -10
100 mA
400 mW
150
-55ᴕ150
V
ᴱ
ᴱ
1998. 7. 8 1/6
Revision No : 3
KRC101M~KRC106M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
DC Current Gain
Output Voltage
Input Voltage (ON)
Input Votlage (OFF)
Transition Frequency
KRC101Mᴕ106M
KRC101M
I
O(OFF)
VO=50V, VI=0
- - 500 nA
30 55 -
KRC102M 50 80 -
KRC103M 70 120 -
G
KRC104M 80 200 -
I
KRC105M
KRC106M
KRC101Mᴕ106M
V
O(ON)
KRC101M
VO=5V, IO=10mA
IO=10mA, II=0.5mA
80 200 -
80 200 -
- 0.1 0.3 V
- 1.5 2.0
KRC102M - 1.8 2.4
KRC103M - 2.1 3.0
V
KRC104M - 2.8 5.0
I(ON)
VO=0.2V, IO=5mA
KRC105M - 0.8 1.1
KRC106M - 0.9 1.3
KRC101Mᴕ104M
KRC105Mᴕ106M
KRC101Mᴕ106M
KRC101M
V
I(OFF)
VO=5V, IO=0.1mA
fT * VO=10V, IO=5mA
1.0 1.2 -
0.5 0.65 -
- 200 - MHz
- - 1.8
V
V
KRC102M - - 0.88
KRC103M - - 0.36
Input Current
KRC104M - - 0.18
KRC105M - - 3.6
KRC106M - - 1.8
Note : * Characteristic of Transistor Only.
I
I
VI=5V
mA
1998. 7. 8 2/6
Revision No : 3