INFINEON TDA21201 User Manual

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P-TO263

-7-2

Features

1 ... 3.3 V conversion:

phase PWM controller

P-TO220

-7-

230

Integrated Switch

Preliminary Data Sheet TDA21201

(MOSFET Driver and MOSFETs)

• Replaces with one part only the semiconductors of a DC/DC power stage for a 12 V à FET driver + High side FET + Low side FET

• Raises the efficiency by reducing static and dynamic losses beyond 85 % due to optimized MOSFETs and Driver

• Reduces overall part count and board space consumption

• Simplifies and shortens the circuit design and the layout

P-TO220-7-3

• Eliminates the need for external bootstrap components

• Provides simplest overall output current scalability

• Protects the Driver and

the MOSFETs against over-

temperature and shoot-through problems Vcc à Gnd

• Achieves the lowest thermal resistance Rthjc and Rthja

• Uses the well-known, easy-to-assemble and robust

standard TO-220 and TO-263 (D²Pak) package

• Requires no separate supply voltage to operate except 12 V

• Three state input to enable a shut down mode to turn off

both MOSFETs

• Compatible with standard 2-, 3-, 4-, 6ICs

• Ideal for compact, highly-efficient, multi-phase voltage

regulators on motherboards and VRMs

7

1

Type Package Marking Ordering Code

TDA21201-P7 TO-220-7-3 21201P7 Q67042-S4100 TDA21201-S7 TO-220-7-230 21201S7 Q67042-S4101 TDA21201-B7 TO-263-7-2 21201B7 Q67042-S4099

Pin Configuration and Function Pin number Pin name Pin description

1,2,3 GND Ground 4/tab V

Output voltage from common node of the MOSFETs

OUT

5 IN Input signal from PWM controller 6,7 VCC Supply voltage to MOSFETs and Driver IC

General Description

The Integrated Switch TDA21201 incorporates an intelligent MOSFET driver and two Power MOSFETs in a single package to form a fully integrated and optimized power stage of a DC/DC synchronous buck converter including the bootstrap components for the high-side MOSFET. The Power MOSFETs are optimized for lowest static and dynamic losses for a 12 V to sub-3.5 V conversion and can handle up to 30 A output current. The TDA21201 is manufactured in Infineon´s state-of-the-art multi-chip assembly using a low-Rth 7-Pin

Page 1 Apr-29, 2002

Preliminary Data Sheet TDA21201

TO-220 package or its associated SMD counterpart TO-263 and Infineon´s latest chip technologies.

Block Diagram

VCC

= 12 V (Pin 6-7)

High side FET

VIN

FET Drive

Circuitry

V

OUT

to PWM IC

(Pin 5)

Low side FET

to output inductor

(Pin 4/tab)

GND

(Pin 1-3)

Absolute Maximum Ratings

At Tj = 25 °C, unless otherwise specified

Parameter Symbol

Value

Unit

Min. Max.

Peak voltage supplied to ‘VCC’ pins V Peak voltage supplied to ‘IN’ pin, D

< 10 % VIN -5 10

IN_Peak

Peak voltage at ‘Vout’ pin to GND V Maximum DC output current, VCC = 12 V, V

≤ 3.3 V

OUT

CC_PEAK

OUT_PK

I

OUT_MAX

Junction temperature TJ 150 Storage temperature TS -55 150 Lead temperature TO-263;

TL 225

20*

-5 20*

-10 30 A

°C

V

MSL1, IPC/JEDEC J-STD-020A Lead temperature TO-220 (soldering, 10 seconds) TL 260 ESD rating (Human body model) ESD 2 k V IEC climatic category; DIN EN 60068-1 55/150/56 -

* The positive peak voltage (= the voltage overshoot during switching transients) at the VCC pins and the OUT pin/tab is limited by the Integrated Switch itself (pls., see the “Over-voltage protection of VCC” paragraph

Thermal Characteristic

Values Parameter Symbol

Unit

Min. Typ. Max.

Thermal resistance, junctions-case 1.9 Thermal resistance, junctions-ambient, leaded 62.5

Page 2 Apr-29, 2002

K/W

SMD version, device on PCB: @ min. footprint @ 6 cm² cooling area

Preliminary Data Sheet TDA21201

62 40

Electrical Characteristics

At Tj = 25 °C, unless otherwise specified

Parameter Symbol

Conditions

Min.

Values

Typ. Max.

Unit

Input Characteristic (= MOSFET Driver)

Shut down window V Shut down hold-off

IN_SHUT

t_

SHUT

t_

1.2 V ≤ V

> 1.5 µs 1.2 1.6 V

SHUT

≤ 1.6 V

IN

0.8 1.5 2.5 µs time Supply current during shut down

Current into ‘IN’ pin, during shut down Current into ‘IN’ pin,

I

CC_SHUT

I

IN_SHUT

I

IN_LOW

1.2 V ≤ V

≤ 1.6 V

IN

10 16 22 mA

VCC = 12 V

VIN = 1.4 V -10 10

VIN = 0.4 V -2 -10 -50

µA Low Current into ‘IN’ pin,

I

IN_HIGH

VIN = 4.5 V 20 35 80

High

Static Characteristic (= High Side and Low Side MOSFET)

D-S Breakdown Voltage High Side D-S Breakdown

DS_HS

V

DS_LS

1.2 V ≤ V I

D

≤ 1.6 V

IN

= 0.25 A

30

V

Voltage Low Side D-S Leakage Current High Side D-S Leakage Current High Side Drain-Source on Resistance High Side Drain-Source on Resistance Low Side Drain-Source on Resistance High Side Drain-Source on

I

DSS_HS

I

DSS_LS

R

DSon_HS

R

DSon_LS

R

DSon_HS

R

DSon_LS

1.2 V ≤ V V

CC

≤ 1.6 V

IN

= 12 V

I

= 15 A

OUT

Tj = 25 °C

I

= 15 A

OUT

Tj = 125 °C

0.1 1 µA

13.3

4.8

17.7

6.4

mΩ

Resistance Low Side

Dynamic Characteristic (= Integrated Switch)

IN to OUT delay time L à H; 50 % to 50 % IN to OUT delay time H à L; 50 % to 50 % OUT rise time; 20 %

t

110 150

d(ON)

= 15 A

t

70 100

d(OFF)

I

OUT

tr 10 25

(s. Timing Diagram)

ns

to 80 % OUT fall time; 80 to

tf

10 30

20 %

Page 3 Apr-29, 2002

t

d(on)

t

d(off)

VIN

V

OUT

t

d(on)

t

d(off)

Preliminary Data Sheet TDA21201

Operating Conditions

At Tj = 25 °C, unless otherwise specified

Parameter Symbol

Voltage supplied to

VCC 9 15 ‘VCC’ pins Voltage ‘IN’ Low V Voltage ‘IN’ High V Input signal transition

-0.5 0.8

IN_L

2.1 5.5

IN_H

f 100 500 KHz

Conditions

Min.

Values

Typ. Max.

Unit

V

frequency Pulse width Input t Power dissipation P

90 ns

P_IN

10 W

TOT

Junction temperature TJ -25 125 °C

Timing Diagram

50%

Typical application

A circuit designer will value the Integrated Switch TDA21201 as cost-optimized power stage solution in high-density DC/DC conversion applications using a Vcc = 12 V input where efficiency and board space is an issue, e.g. in multi-phase microprocessor supplies on motherboards, in VRMs and servers. The TDA21201 can also be used to power Logic circuits, Memory banks etc. that require higher voltages, e.g. 2.5 or 3.3 V. The efficiency of the Integrated Switch and the overall efficiency of the converter will even go up at these elevated output voltages compared to the 1.6 V efficiency given later on in this data sheet.

Page 4 Apr-29, 2002

PWM 1

1

N

C

Preliminary Data Sheet TDA21201

Designing a 12 V to sub-3.3 V converter using the TDA21201

General info

To design a multi-phase converter with a 12 V input simply use in each phase just one TDA21201 instead of using a MOSFET driver, a high side MOSFET, bootstrap components, and one or more low side MOSFETs. The entire converter is completed by the input filter, the output filter and a multi-phase PWM IC.

Input compatibility to standard PWM controllers / shut-down mode

The Integrated Switch TDA21201 has a high impedance input pin ‘IN’ to be connected to PWM controller outputs ‘PWM1’, ‘PWM2’ etc. It sinks or sources only a fraction of a mA from the controller’s output. The TDA21201 is compatible to standard controller and driver signals in terms of the signal level (5 V TTL) and in terms of the ‘Low’/’High’ relationship (’Low’ turns the low side MOSFET on, ‘High` turns the High side MOSFET on). The TDA21201 can be shut down (the high side MOSFET and the low side MOSFET is turned off) by applying an input signal V

= 1.2 ... 1.6 V for more

IN

than 1.5 µs typical. This way the TDA21201 reduces the power dissipation by saving the gate charges of both the high side and the low side MOSFET during no load conditions. The shutdown state is terminated when V

moves

IN

into the ‘Low’ or ‘High’ threshold.

Typical Application: 12 V à 1.x V N-Phase Converter using the TDA21201

12 V

L1

1...2 V

FET

Driver

PWM IC

PWM 2 PWM N

L

FET

Driver

Page 5 Apr-29, 2002