INFINEON SPW52N50C3 User Manual
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jmax
)
jmax
AR
j
g
SPW52N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPW52N50C3 P-TO247 Q67040-S4615
in TO 247
VDS @ T
Marking
52N50C3
R
DS(on)
I
jmax
560 V
0.07 Ω
D
52 A
P-TO247
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 10 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
I
= 20 A, VDD = 50 V
D
Avalanche current, repetitive tAR limited by T
jmax
I
I
E
1
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
Operating and storage temperature T
D
D puls
AS
AR
GS
GS
tot
,
T
52
30
156
1800 mJ
1
20 A
±20
±30
417 W
st
-55... +150
A
V
°C
Page 1
2004-03-16Rev. 2.0
SPW52N50C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 400 V, ID = 52 A, Tj = 125 °C
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature,
Symbol Values Unit
R
thJC
R
thJA
T
- - 260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA 500 - - V
VGS=0V, ID=20A - 600 -
breakdown voltage
min. typ. max.
- - 0.3 K/W
- - 62
min. typ. max.
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th)
DSS
GSS
DS(on)
G
ID=2700µΑ, VGS=V
VDS=500V, VGS=0V,
T
=25°C,
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=30A,
T
=25°C
j
=150°C
T
j
f=1MHz, open Drain - 0.7 -
2.1 3 3.9
DS
-
0.5
-
-
-
0.06
0.16
µA
25
-
250
Ω
0.07
-
Page 2
2004-03-16Rev. 2.0
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPW52N50C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
2)
C
energy related
Effective output capacitance,
3)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*I
DS
D*RDS(on)max
I
=30A
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
V
=0V to 400V
DS
VDD=380V, VGS=0/10V,
I
=52A, RG=1.8Ω
D
,
min. typ. max.
- 40 - S
- 6800 - pF
- 2200 -
- 150 -
- 212 - pF
- 469 -
- 20 - ns
- 30 -
- 120 -
- 10 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
C
is a fixed capacitance that gives the same stored energy as C
o(er)
3
C
is a fixed capacitance that gives the same charging time as C
o(tr)
Q
gs
gd
g
(plateau)
VDD=380V, ID=52A - 30 - nC
VDD=380V, ID=52A,
V
=0 to 10V
GS
VDD=380V, ID=52A - 5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 160 -
- 290 -
=EAR*f.
AV
DSS
DSS
.
.
Page 3
2004-03-16Rev. 2.0
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPW52N50C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
min. typ. max.
TC=25°C - - 52 A
- - 156
VGS=0V, IF=IS - 1 1.2 V
VR=380V, IF=IS ,
/dt=100A/µs
di
F
- 580 - ns
- 20 - µC
- 70 - A
- 900 - A/µs
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
P
tot
typ. typ.
Thermal capacitance
0.002689 K/W
0.005407
0.011
0.054
0.071
0.036
T
R
j T
th1
(t)
C
th1
C
th2
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
External Heatsink
0.001081
0.004021
0.005415
0.014
0.025
0.158
Ws/K
Page 4
2004-03-16Rev. 2.0
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