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jmax
)
jmax
AR
j
g
SPW52N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPW52N50C3 P-TO247 Q67040-S4615
in TO 247
VDS @ T
Marking
52N50C3
R
DS(on)
I
jmax
560 V
0.07 Ω
D
52 A
P-TO247
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 10 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
I
= 20 A, VDD = 50 V
D
Avalanche current, repetitive tAR limited by T
jmax
I
I
E
1
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
Operating and storage temperature T
D
D puls
AS
AR
GS
GS
tot
,
T
52
30
156
1800 mJ
1
20 A
±20
±30
417 W
st
-55... +150
A
V
°C
Page 1
2004-03-16Rev. 2.0
SPW52N50C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 400 V, ID = 52 A, Tj = 125 °C
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature,
Symbol Values Unit
R
thJC
R
thJA
T
- - 260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA 500 - - V
VGS=0V, ID=20A - 600 -
breakdown voltage
min. typ. max.
- - 0.3 K/W
- - 62
min. typ. max.
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th)
DSS
GSS
DS(on)
G
ID=2700µΑ, VGS=V
VDS=500V, VGS=0V,
T
=25°C,
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=30A,
T
=25°C
j
=150°C
T
j
f=1MHz, open Drain - 0.7 -
2.1 3 3.9
DS
-
0.5
-
-
-
0.06
0.16
µA
25
-
250
Ω
0.07
-
Page 2
2004-03-16Rev. 2.0
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPW52N50C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
2)
C
energy related
Effective output capacitance,
3)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*I
DS
D*RDS(on)max
I
=30A
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
V
=0V to 400V
DS
VDD=380V, VGS=0/10V,
I
=52A, RG=1.8Ω
D
,
min. typ. max.
- 40 - S
- 6800 - pF
- 2200 -
- 150 -
- 212 - pF
- 469 -
- 20 - ns
- 30 -
- 120 -
- 10 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
C
is a fixed capacitance that gives the same stored energy as C
o(er)
3
C
is a fixed capacitance that gives the same charging time as C
o(tr)
Q
gs
gd
g
(plateau)
VDD=380V, ID=52A - 30 - nC
VDD=380V, ID=52A,
V
=0 to 10V
GS
VDD=380V, ID=52A - 5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 160 -
- 290 -
=EAR*f.
AV
DSS
DSS
.
.
Page 3
2004-03-16Rev. 2.0
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPW52N50C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
min. typ. max.
TC=25°C - - 52 A
- - 156
VGS=0V, IF=IS - 1 1.2 V
VR=380V, IF=IS ,
/dt=100A/µs
di
F
- 580 - ns
- 20 - µC
- 70 - A
- 900 - A/µs
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
P
tot
typ. typ.
Thermal capacitance
0.002689 K/W
0.005407
0.011
0.054
0.071
0.036
T
R
j T
th1
(t)
C
th1
C
th2
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
External Heatsink
0.001081
0.004021
0.005415
0.014
0.025
0.158
Ws/K
Page 4
2004-03-16Rev. 2.0
SPW52N50C3
1 Power dissipation
P
= f (TC)
tot
SPW52N50C3
500
W
400
350
tot
P
300
250
200
150
100
50
0
0 20 40 60 80 100 120
°C
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 ,
3
10
A
2
10
D
1
I
10
0
10
-1
10
-2
10
160
T
C
10
0
T
=25°C
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
1
10
10
2
V
V
DS
10
3
3 Transient thermal impedance
Z
= f (tp)
thJC
parameter: D = t
0
10
K/W
-1
10
thJC
Z
-2
10
-3
10
-4
10
-7
10
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
10
-5
10
-4
10
-3
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: t
280
A
200
D
I
160
120
80
40
-1
10
s
t
p
0
0 4 8 12 16 20
= 10 µs, V
p
GS
20V
7.5V
7V
6.5V
6V
5.5V
5V
4.5V
V
V
26
DS
Page 5
2004-03-16Rev. 2.0
SPW52N50C3
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: t
160
A
120
D
100
I
80
60
40
20
0
0 4 8 12 16 20
= 10 µs, V
p
GS
V
V
20V
6.5V
6V
5.5V
5V
4.5V
4V
DS
26
6 Typ. drain-source on resistance
R
DS(on)
parameter:
=f(ID)
T
=150°C, V
j
0.5
Ω
0.4
DS(on)
0.35
R
0.3
0.25
0.2
0.15
0.1
0 20 40 60 80 100 120
4.5V4V
5V
GS
5.5V
6V
6.5V
A
I
20V
160
D
7 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 30 A, VGS = 10 V
D
SPW52N50C3
0.38
Ω
0.32
0.28
DS(on)
0.24
0.2
0.16
0.12
0.08
0.04
0
-60 -20 20 60 100
98%
typ
°C
8 Typ. transfer characteristics
= f ( VGS ); V
I
D
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
280
A
200
D
I
160
120
80
40
180
T
j
0
0 1 2 3 4 5 6 7 8
25°C
V
V
150°C
10
GS
Page 6
2004-03-16Rev. 2.0
SPW52N50C3
j
9 Typ. gate charge
= f (Q
V
GS
parameter: I
SPW52N50C3
16
V
12
0.2 V
GS
10
V
0.8 V
8
6
4
2
0
0 40 80 120 160 200 240 280 320 360nC420
)
Gate
= 52 A pulsed
D
DS max
DS max
Q
Gate
10 Forward characteristics of body diode
IF = f (VSD)
parameter: T
3
10
A
2
10
F
I
1
10
0
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
SPW52N50C3
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
11 Avalanche SOA
IAR = f (tAR)
par.:
T
≤ 150 °C
j
20
A
16
14
AR
I
12
10
8
6
4
2
0
10
-3
Tj(START)=125°C
-2
10
10
-1
Tj (START)=25°C
10 0 10 1 10
12 Avalanche energy
EAS = f (Tj)
par.: I
2
µs
t
AR
10
4
= 10 A, VDD = 50 V
D
2
mJ
AS
E
1
0.5
0
20 40 60 80 100 120
°C
T
160
j
Page 7
2004-03-16Rev. 2.0
SPW52N50C3
13 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (Tj)
SPW52N50C3
600
V
570
560
550
540
530
520
510
500
490
480
470
460
450
-60 -20 20 60 100
°C
14 Avalanche power losses
PAR = f (f )
parameter:
1000
-
800
700
AV
P
600
500
400
300
200
100
180
T
j
0
10
E
=1mJ
AR
4
10
5
Hz
10
6
f
15 Typ. capacitances
C = f (VDS)
parameter:
10
pF
10
C
10
10
10
V
=0V, f=1 MHz
GS
5
Ciss
4
3
Coss
2
Crss
1
0 100 200 300 400
V
V
DS
600
16 Typ. C
E
=f(VDS)
oss
24
µJ
20
18
16
oss
E
14
12
10
8
6
4
2
0
0 100 200 300
stored energy
oss
V
V
500
DS
Page 8
2004-03-16Rev. 2.0
Definition of diodes switching characteristics
SPW52N50C3
Page 9
2004-03-16Rev. 2.0
P-TO-247-3-1
15.9
6.35
ø3.61
SPW52N50C3
5.03
2.03
4.37
6.17
9.91
20.9
1.75
D
1.14
0.243
General tolerance unless otherwise specified: Leadframe parts: ±0.05
D 7
2.97 x 0.127
16
1.2
2
2.92
5.46
5.94
5˚
Package parts: ±0.12
20˚
41.22
0.762 MAX.
+0.05
2.4
Page 10
2004-03-16Rev. 2.0
SPW52N50C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
2004-03-16Rev. 2.0
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