INFINEON SPW47N65C3 User Manual

SPW47N65C3

CoolMOSTM Power Transistor

Features

• Worldwide best R

• Low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

• Pb-free lead plating; RoHS compliant

Type Package

SPW47N65C3 PG-TO247-3-1

in TO247

ds,on

1)

for target applications

Marking

47N65C3

Product Summary

V

DS

R

DS(on),max

Q

g,typ

650 V

0.07

255 nC

PG-TO247-3-1

Ω

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

MOSFET dv /dt ruggedness dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

TC=25 °C

T

2)

AR

AR

2),3)

2),3)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C

ID=3.5 A, VDD=50 V

ID=7 A, VDD=50 V

V

V

GS

static V

AC (f >1 Hz)

P

tot

, T

T

j

TC=25 °C

stg

=100 °C

C

=0...480 V

DS

Value

47

30

141

1800 mJ

1

7

50

±20

±30

415

-55 ... 150

A

A

V/ns

W

°C

Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 1.2 page 1 2008-02-12

Maximum ratings, at Tj=25 °C, unless otherwise specified

SPW47N65C3

Parameter Symbol Conditions Unit

Continuous diode forward current

Diode pulse current

2)

I

S

I

S,pulse

T

C

=25 °C

Parameter Symbol Conditions Unit

Value

47

141

Values

A

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ­ambient

Soldering temperature,
wavesoldering only allowed at leads

Electrical characteristics, at T

R

thJC

R

thJA

T

sold

=25 °C, unless otherwise specified

j

leaded - - 62

1.6 mm (0.063 in.)
from case for 10 s

- - 0.3 K/W

- - 260 °C

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

=0 V, ID=250 µA

VDS=VGS, ID=2.7 mA

VDS=600 V, VGS=0 V,
T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=30 A,
T

=25 °C

j

V

=10 V, ID=30 A,

GS

T

=150 °C

j

650 - - V

2.1 3 3.9

- 0.5 25 µA

-50-

- - 100 nA

- 0.06 0.07

- 0.17 -

f =1 MHz, open drain - 0.75 -

Ω

Ω

Rev. 1.2 page 2 2008-02-12

SPW47N65C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Effective output capacitance, energy

5)

related

Effective output capacitance, time

6)

related

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

C

t

t

t

t

iss

oss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=25 V,

V

GS

f =1 MHz

V

=0 V, VDS=0 V

GS

to 480 V

=400 V,

V

DD

V

=10 V, ID=47 A,

GS

=5.6 Ω

R

G

- 7000 - pF

- 2300 -

- 270 -

- 490 -

- 100 - ns

-27-

- 210 -

-14-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q

Q

Q

V

gs

gd

g

plateau

V

=480 V, ID=47 A,

DD

V

=0 to 10 V

GS

-35-nC

- 120 -

- 255 -

- 5.5 - V

Reverse Diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

1)

J-STD20 and JESD22

2)

Pulse width tp limited by T

3)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

j,max

V

SD

t

rr

Q

rr

I

rrm

VGS=0 V, IF=47 A,
T

=25 °C

j

VR=480 V, IF=IS,

di

/dt =100 A/µs

F

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 0.9 1.2 V

- 640 - ns

-19-µC

-56-A

DSS.

DSS.

Rev. 1.2 page 3 2008-02-12