INFINEON SPW47N60S5 User Manual
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jmax
)
AR
jmax
AR
j
g
Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPW47N60S5 P-TO247 Q67040-S4240
DS(on)
in TO 247
Marking
47N60S5
V
R
DS(on)
I
SPW47N60S5
DS
D
P-TO247
600 V
0.07 Ω
47 A
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 10 A, V
D
Avalanche energy, repetitive t
I
= 20 A, V
D
Avalanche current, repetitive t
= 50 V
DD
= 50 V
DD
limited by T
AR
limited by T
jmax
I
I
E
1
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C
C
V
P
Operating and storage temperature T
D
D puls
AS
AR
GS
GS
tot
,
T
47
30
94
1800 mJ
1
20 A
±20
±30
415 W
st
-55... +150
A
V
°C
Page 1
2003-07-02
Final data
)
S
SPW47N60S5
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
V
= 480 V, I
DS
= 47 A, T
D
= 125 °C
j
dv/dt 20 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature,
Symbol Values Unit
R
thJC
R
thJA
T
- - 260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 600 - - V
GS
V
=0V, ID=20A - 700 -
GS
breakdown voltage
min. typ. max.
- - 0.3 K/W
- 45 -
min. typ. max.
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
I
=2700µΑ, VGS=V
D
V
=600V, V
DS
T
=25°C,
j
T
=150°C
j
V
=20V, V
GS
V
=10V, ID=30A,
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open Drain - 8.7 -
=0V,
GS
=0V - - 100 nA
DS
3.5 4.5 5.5
D
-
0.5
-
-
-
0.06
0.16
25
-
250
0.07
µA
Ω
-
Page 2
2003-07-02
Final data
SPW47N60S5
Electrical Characteristics , at T
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
= 25 °C, unless otherwise specified
j
min. typ. max.
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
VDS≥2*I
I
D
VGS=0V, V
f=1MHz
VDD=-V, V
I
D
V
D*RDS(on)max
=30A
=25V,
DS
=0/10V,
GS
=47A, RG=1.3Ω
=-V, ID=47A - 56 - nC
DD
,
- 30 - S
- 7600 - pF
- 2900 -
- 27 -
- 360 - ns
- 30 -
- 200 300
- 30 45
- 123 -
V
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
g
(plateau)
=-V, ID=47A,
DD
=0 to 10V
V
GS
V
=-V, ID=47A - 8 - V
DD
- 220 286
=EAR*f.
AV
Page 3
2003-07-02
Final data
SPW47N60S5
Electrical Characteristics, at T
Parameter
Inverse diode continuous
= 25 °C, unless otherwise specified
j
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
SD
rr
rr
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
min. typ. max.
T
=25°C - - 47 A
C
- - 94
V
=0V, IF=IS - 1 1.2 V
GS
V
=-V, IF=IS ,
R
/dt=100A/µs
di
F
- 650 1100 ns
- 24 - µC
Thermal capacitance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.002689 K/W
0.005407
0.011
0.054
0.071
0.036
T
R
j T
th1
P
(t)
tot
C
th1
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th2
C
th,n
T
case
amb
0.001081
0.004021
0.005415
0.014
0.025
0.158
External Heatsink
Ws/K
Page 4
2003-07-02
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