INFINEON SPW47N60C2 User Manual
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j
A
j
A
t
j
g
Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
Type Package Ordering Code
SPW47N60C2 P-TO247 Q67040-S4323
DS(on)
in TO 247
Marking
47N60C2
SPW47N60C2
Product Summary
VDS 600
R
DS(on
I
D
P-TO247
0.07 Ω
47
V
A
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
T
= 100 °C
C
Pulsed drain current, tp limited by T
max
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by T
I
=20A, VDD=50V
D
Avalanche current, repetitive t
limited by T
R
Reverse diode dv/dt
IS=47A, VDS < VDD, di/dt=100A/µs, T
jmax
=150°C
jmax
max
1)
I
I
E
E
I
dv/dt
Gate source voltage V
Power dissipation, T
= 25°C P
C
Operating and storage temperature T
D
D puls
AS
AR
R
GS
to
T
,
47
30
94
1800 mJ
1
20 A
6
±20
415 W
st
-55... +150
A
V/ns
V
°C
Page 1
2002-10-07
Final data
A
SPW47N60C2
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
Thermal resistance, junction - ambient, leaded R
Linear derating factor
Soldering temperature,
T
thJC
thJ
sold
- - 0.3 K/W
- - 62
- - 3.33
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
Drain-source avalanche breakdown voltage
VGS=0V, ID=20A
Gate threshold voltage, VGS = V
I
=2.7mA
D
DS
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
V
(BR)DSS
V
(BR)DS
V
GS(th)
I
DSS
600 - - V
- 700 -
3.5 4.5 5.5
-
0.5
25
W/K
µA
V
= 600 V, VGS = 0 V, Tj = 150 °C
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=30A, Tj=25°C
Gate input resistance
I
GSS
R
DS(on)
R
G
f = 1 MHz, open drain
1
Repetitve avalanche causes additional power losses that can be calculated as P
Page 2
-
-
250
- - 100 nA
- 0.06 0.07
Ω
- 0.62 -
AV=EAR
*f.
2002-10-07
Final data
)
)
f
g
g
(
)
SPW47N60C2
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
1)
energy related
Effective output capacitance,
2)
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Gate charge total Q
C
C
d(on
r
d(off
g
fs
iss
oss
rss
o(er)
o(tr)
s
d
VDS≥2*ID*R
I
=30A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 30 - S
- 8800 - pF
- 3150 -
- 36 -
VGS=0V,
V
=0V to 480V
DS
- 233 - pF
- 470 -
VDD=380V, VGS=0/13V,
I
=47A, RG=1.8Ω,
D
T
=125°C
j
- 28 - ns
- 9.5 -
- 103 155
- 9.6 14.4
VDD=350V, ID=47A - 56 - nC
- 123 -
VDD=350V, ID=47A,
V
=0 to 10V
GS
- 220 286
Gate plateau voltage V
1
C
is a fixed capacitance that gives the same stored energy as C
o(er)
2
C
is a fixed capacitance that gives the same charging time as C
o(tr)
plateau
VDD=350V, ID=47A - 8 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
Page 3
2002-10-07
DSS
DSS
.
.
Final data
SPW47N60C2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Inverse diode continuous
I
S
TC=25°C - - 47 A
forward current
Inverse diode direct current,
I
SM
- - 94
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
VGS=0V, IF=IS - 1 1.2 V
VR=350V, IF=IS ,
di
/dt=100A/µs
F
- 650 1100 ns
- 24 - µC
- 62 - A
- 2500 - A/µs
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Thermal capacitance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.002694 K/W
0.006036
0.00791
0.023
0.035
0.018
T
R
j T
th1
P
(t)
tot
C
th1
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th2
C
th,n
T
case
amb
0.001219
0.004011
0.006484
0.008028
0.05
0.316
External Heatsink
Ws/K
Page 4
2002-10-07
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