INFINEON SPW24N60C3 User Manual
SPW24N60C3
jmax
)
jmax
AR
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPW24N60C3 PG-TO247 Q67040-S4640
VDS @ T
Marking
24N60C3
R
DS(on)
I
jmax
650 V
0.16 Ω
D
24.3 A
PG-TO247
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 10 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
I
= 24.3 A, VDD = 50 V
D
jmax
Avalanche current, repetitive tAR limited by T
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
Operating and storage temperature T
Reverse diode dv/dt dv/dt 15 V/ns
4)
Symbol Value Unit
I
D
24.3
15.4
72.9
780 mJ
1
24.3 A
±20
±30
240 W
-55... +150
1
I
Dpuls
E
AS
E
AR
I
GS
V
GS
tot
, T
st
A
V
°C
Page 1
2005-09-21Rev. 2.4
Maximum Ratings
SPW24N60C3
Parameter
Drain Source voltage slope
VDS = 480 , ID = 24.3 , Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature, wavesoldering
Symbol Values Unit
R
thJC
R
thJA
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=24.3A - 700 -
breakdown voltage
min. typ. max.
- - 0.52 K/W
- - 62
- - 260 °C
min. typ. max.
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th)
DSS
GSS
DS(on)
G
ID=1200µΑ, VGS=V
VDS=600V, VGS=0V,
=25°C,
T
j
=150°C
T
j
VGS=20, VDS=0V - - 100 nA
VGS=10V, ID=15.4A,
=25°C
T
j
=150°C
T
j
f=1MHz, open Drain - 0.66 -
2.1 3 3.9
DS
-
0.1
-
-
-
0.14
0.34
µA
1
-
100
Ω
0.16
-
Page 2
2005-09-21Rev. 2.4
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPW24N60C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
2)
C
energy related
Effective output capacitance,
3)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*I
DS
D*RDS(on)max
I
=15.4A
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
V
=0V to 480V
DS
VDD=380V, VGS=0/10V,
I
=24.3A, RG=3.3
D
VDD=380V, VGS=0/10V,
I
=24.3A, RG=3.3Ω
D
,
min. typ. max.
- 21.5 - S
- 3000 - pF
- 1000 -
- 60 -
- 141 - pF
- 224 -
- 13 - ns
- 21 -
- 140 -
- 14 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
is a fixed capacitance that gives the same stored energy as C
C
o(er)
3
is a fixed capacitance that gives the same charging time as C
C
o(tr)
4
ISD<=ID, di/dt<=200A/us, V
Identical low-side and high-side switch.
DClink
Q
gs
gd
g
(plateau)
=400V, V
VDD=480, ID=24.3A - 12.7 - nC
VDD=480V, ID=24.3A,
=0 to 10V
V
GS
VDD=480V, ID=24.3A - 5 - V
peak<VBR, DSS
, Tj<T
j,max
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
.
- 45.8 -
- 104.9 135
=EAR*f.
AV
DSS
DSS
.
.
Page 3
2005-09-21Rev. 2.4
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPW24N60C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
min. typ. max.
TC=25°C - - 24.3 A
- - 72.9
VGS=0V, IF=I
VR=480V, IF=IS ,
/dt=100A/µs
di
F
S
- 1 1.2 V
- 600 - ns
- 13 - µC
- 70 - A
- 1400 - A/µs
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
P
tot
typ. typ.
Thermal capacitance
0.006524 K/W
0.013
0.025
0.096
0.117
0.053
T
R
j T
th1
(t)
C
th1
C
th2
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
External Heatsink
0.0004439
0.001662
0.002268
0.006183
0.014
0.104
Ws/K
Page 4
2005-09-21Rev. 2.4
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