INFINEON SPW20N60S5 User Manual
SPW20N60S5
jmax
)
jmax
AR
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPW20N60S5 PG-TO247 Q67040-S4238
Marking
20N60S5
V
R
DS(on)
I
DS
D
600 V
0.19 Ω
20 A
PG-TO247
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 10 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
I
= 20 A, VDD = 50 V
D
Avalanche current, repetitive tAR limited by T
jmax
Symbol Value Unit
I
I
E
1
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
Operating and storage temperature T
D
Dpuls
AS
AR
GS
GS
tot
, T
A
20
13
40
690 mJ
1
20 A
±20
V
±30
208 W
st
-55... +150
°C
Page 1
2005-06-28Rev. 2.4
Maximum Ratings
SPW20N60S5
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 20 A, Tj = 125 °C
Symbol Value Unit
dv/dt 20 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature, wavesoldering
Symbol Values Unit
R
thJC
R
thJA
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=20A - 700 -
breakdown voltage
min. typ. max.
- - 0.6 K/W
-
-
50
- - 260 °C
min. typ. max.
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th)
DSS
GSS
DS(on)
G
ID=1000µΑ, VGS=V
VDS=600V, VGS=0V,
=25°C,
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=13A,
=25°C
T
j
=150°C
T
j
f=1MHz, open Drain - 12 -
3.5 4.5 5.5
DS
-
0.5
-
-
-
0.16
0.43
µA
5
-
250
Ω
0.19
-
Rev. 2.4
Page 2 2005-06-28
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPW20N60S5
Parameter
Symbol Conditions Values Unit
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
2)
C
energy related
Effective output capacitance,
3)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
V
≥2*I
DS
D*RDS(on)max
I
=13A
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
V
=0V to 480V
DS
VDD=350V, VGS=0/10V,
I
=20A, RG=3.6Ω
D
,
min. typ. max.
- 12 - S
- 3000 - pF
- 1170 -
- 28 -
- 83 - pF
- 160 -
- 120 - ns
- 25 -
- 130 195
Fall time t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
C
is a fixed capacitance that gives the same stored energy as C
o(er)
3
C
is a fixed capacitance that gives the same charging time as C
o(tr)
Q
gs
gd
g
(plateau)
VDD=350V, ID=20A - 21 - nC
VDD=350V, ID=20A,
V
=0 to 10V
GS
VDD=350V, ID=20A - 8 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 30 45
- 47 -
- 79 103
=EAR*f.
AV
DSS
DSS
.
.
Rev. 2.4
Page 3 2005-06-28
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPW20N60S5
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
SD
rr
rr
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.00769 K/W
0.015
0.029
0.114
0.136
0.059
min. typ. max.
TC=25°C - - 20 A
- - 40
VGS=0V, IF=I
VR=350V, IF=IS ,
/dt=100A/µs
di
F
S
- 1 1.2 V
- 610 - ns
- 12 - µC
Thermal capacitance
C
C
C
C
C
C
th1
th2
th3
th4
th5
th6
0.0003763
0.001411
0.001931
0.005297
0.012
0.091
Ws/K
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
Rev. 2.4
R
th,n
C
th,n
Page 4 2005-06-28
T
case
amb
External Heatsink
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