INFINEON SPW20N60C3 User Manual

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jmax

)

AR

jmax

AR

j

g

Final data

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

Type Package Ordering Code

SPW20N60C3 P-TO247 Q67040-S4406

VDS @ T

Marking

20N60C3

R

DS(on)

I

SPW20N60C3

jmax

0.19 Ω

D

20.7 A

P-TO247

650 V

Maximum Ratings

Parameter Symbol Value Unit

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current, tp limited by T

Avalanche energy, single pulse

I

= 10 A, V

D

Avalanche energy, repetitive t

I

= 20 A, V

D

Avalanche current, repetitive t

= 50 V

DD

= 50 V

DD

limited by T

AR

limited by T

Reverse diode dv/dt

IS=20.7A, VDS=480V, Tj=125°C

jmax

I

I

E

1

E

I

dv/dt 6 V/ns

Gate source voltage static V

Gate source voltage AC (f >1Hz)

Power dissipation, T

= 25°C

C

V
P

Operating and storage temperature T

D

D puls

AS

AR

GS
GS
tot

,

T

20.7

13.1

62.1

690 mJ

1

20 A

±20

±30

208 W

st

-55... +150

A

V

°C

Page 1

2003-09-17

Maximum Ratings

Final data

SPW20N60C3

Parameter

Drain Source voltage slope

V

= 480 V, I

DS

= 20.7 A, T

D

= 125 °C

j

Symbol Value Unit

dv/dt 50 V/ns

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

Soldering temperature,

Symbol Values Unit

R

thJC

R

thJA

T

- - 260 °C

sold

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Drain-source breakdown voltage

Drain-Source avalanche

Symbol Conditions Values Unit

V

(BR)DSS

V

(BR)DS

V

=0V, ID=0.25mA 600 - - V

GS

V

=0V, ID=20A - 700 -

GS

breakdown voltage

min. typ. max.

- - 0.6 K/W

- - 62

min. typ. max.

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

GS(th)

DSS

GSS

DS(on)

G

I

=1000µΑ, VGS=V

D

VDS=600V, V
T

=25°C,

j

=150°C

T

j

VGS=30V, V
V

=10V, ID=13.1A,

GS

T

=25°C

j

=150°C

T

j

f=1MHz, open Drain - 0.54 -

=0V,

GS

=0V - - 100 nA

DS

2.1 3 3.9

DS

-

0.5

-

-

-

0.16

0.43

25

-

250

0.19

µA

Ω

-

Page 2

2003-09-17

Final data

j

SPW20N60C3

Electrical Characteristics , at T

Parameter

Symbol Conditions Values Unit

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

Effective output capacitance,

2)

C

energy related

Effective output capacitance,

3)

C

time related

Turn-on delay time t

= 25 °C, unless otherwise specified

min. typ. max.

fs

iss
oss
rss

o(er)

o(tr)

d(on)

VDS≥2*I

I

D

V
f=1MHz

V
V

V

I

D

T

j

D*RDS(on)max

=13.1A

=0V, V

GS

=0V,

GS

=0V to 480V

DS

=380V, V

DD

=20.7A, RG=3.6Ω,

=125

=25V,

DS

GS

,

=0/13V,

- 17.5 - S

- 2400 - pF

- 780 -

- 50 -

- 83 - pF

- 160 -

- 10 - ns

Rise time t
Turn-off delay time t
Fall time t

r
d(off)

f

V

=380V, V

DD

I

=20.7A, RG=3.6Ω

D

GS

=0/13V,

Gate Charge Characteristics

Gate to source charge
Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

is a fixed capacitance that gives the same stored energy as C

C

o(er)

3

is a fixed capacitance that gives the same charging time as C

C

o(tr)

Q

gs
gd

g

(plateau)

V

=480V, ID=20.7A - 11 - nC

DD

V

=480V, ID=20.7A,

DD

=0 to 10V

V

GS

V

=480V, ID=20.7A - 5.5 - V

DD

while V

oss

while V

oss

- 5 -

- 67 100

- 4.5 12

- 33 -

- 87 114

=EAR*f.

AV

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

DSS

.

.

Page 3

2003-09-17

Final data

SPW20N60C3

Electrical Characteristics, at T

Parameter

Inverse diode continuous

= 25 °C, unless otherwise specified

j

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I

Peak rate of fall of reverse

SD

rr

rr

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

min. typ. max.

T

=25°C - - 20.7 A

C

- - 62.1

V

=0V, IF=IS - 1 1.2 V

GS

V

=480V, IF=IS ,

R

/dt=100A/µs

di

F

- 500 800 ns

- 11 - µC

- 70 - A

- 1400 - A/µs

Symbol

Thermal resistance

R

th1

R

th2

R

th3

R

th4

R

th5

R

th6

P

tot

Value Unit Symbol Value Unit

typ. typ.

Thermal capacitance

0.00769 K/W

0.015

0.029

0.114

0.136

0.059

T

R

j T

th1

(t)

C

th1

C

th2

C

th1

C

th2

C

th3

C

th4

C

th5

C

th6

R

th,n

C

th,n

T

case

amb

0.0003763

0.001411

0.001931

0.005297

0.012

0.091

External Heatsink

Ws/K

Page 4

2003-09-17