INFINEON SPW11N60CFD User Manual

SPW11N60CFD

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Intrinsic fast-recovery body diode

• Extreme low reverse recovery charge

Type Package Ordering Code

SPW11N60CFD PG-TO247 Q67040-S4619

VDS @ T

Marking

11N60CFD

R

DS(on)

jmax

650 V

0.44 Ω

I

D

11 A

PG-TO247

Maximum Ratings

Parameter

Continuous drain current

= 25 °C

T

C

= 100 °C

T

C

Pulsed drain current, tp limited by T

jmax

Avalanche energy, single pulse

= 5.5 A, VDD = 50 V

I

D

Avalanche energy, repetitive tAR limited by T

jmax

1)

ID = 11 A, VDD = 50 V

Avalanche current, repetitive tAR limited by T

jmax

Reverse diode dv/dt

IS=11A, VDS=480V, Tj=125°C

Gate source voltage V

Gate source voltage AC (f >1Hz) V

Symbol Value Unit

I

D

A

11

7

I

D puls

E

AS

E

AR

I

AR

28

340 mJ

0.6

11 A

dv/dt 40 V/ns

GS

±20

±30

V

Power dissipation, T

= 25°C P

C

Operating and storage temperature T

tot

j

125 W

,

T

stg

-55... +150

°C

2005-06-28Rev. 2.4 Page 1

Maximum Ratings

SPW11N60CFD

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

Maximum diode commutation speed

VDS = 480 V, ID = 11 A, Tj = 125 °C

Symbol Value Unit

dv/dt 80 V/ns

diF/dt 600

Thermal Characteristics

Parameter

Thermal resistance, junction - case R

Thermal resistance, junction - ambient, leaded R

Soldering temperature, wavesoldering

Symbol Values Unit

thJC

thJA

T

sold

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions Values Unit

A/µs

min. typ. max.

- - 1 K/W

- - 62

- - 260 °C

min. typ. max.

Drain-source breakdown voltage V

Drain-Source avalanche

V

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance R

(BR)DSS

(BR)DS

GS(th)

DSS

GSS

DS(on)

G

VGS=0V, ID=0.25mA 600 - - V

VGS=0V, ID=11A - 700 -

ID=500µΑ, VGS=V

VDS=600V, VGS=0V,

=25°C,

T

j

=150°C

T

j

VGS=20V, VDS=0V - - 100 nA

VGS=10V, ID=7A,

=25°C

T

j

=150°C

T

j

f=1MHz, open Drain - 0.86 -

DS

3 4 5

-

1.1

900

0.38

1.02

0.44

µA

-

Ω

-

2005-06-28Rev. 2.4 Page 2

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

(p

)

SPW11N60CFD

Parameter

Symbol Conditions Values Unit

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Effective output capacitance,

2)

C

energy related

Effective output capacitance,

3)

C

time related

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

fs

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

VDS≥2*ID*R

=7A

I

D

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

=0V to 480V

V

DS

VDD=380V, VGS=0/10V,

=11A, RG=6.8Ω

I

D

DS(on)max

,

min. typ. max.

- 8.3 - S

- 1200 - pF

- 390 -

- 30 -

- 45 - pF

- 85 -

- 34 - ns

- 18 -

- 43 -

- 7 -

Gate Charge Characteristics

Gate to source charge

Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

is a fixed capacitance that gives the same stored energy as C

C

o(er)

3

is a fixed capacitance that gives the same charging time as C

C

o(tr)

Q

gs

gd

g

lateau

VDD=480V, ID=11A - 9 - nC

VDD=480V, ID=11A,

=0 to 10V

V

GS

VDD=480V, ID=11A - 7 - V

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 23 -

- 48 64

AV=EAR

*f.

DSS

.

2005-06-28Rev. 2.4 Page 3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

SPW11N60CFD

Parameter

Inverse diode continuous

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Peak rate of fall of reverse

SD

rr

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

Symbol

Value Unit Symbol Value Unit

min. typ. max.

TC=25°C - - 11 A

- - 28

VGS=0V, IF=I

VR=480V, IF=IS ,

/dt=100A/µs

di

F

S

- 1 1.2 V

- 140 - ns

- 0.7 - µC

- 11 - A

- 1200 - A/µs

Thermal resistance

R

th1

R

th2

R

th3

R

th4

R

th5

R

th6

P

tot

typ. typ.

Thermal capacitance

0.015 K/W

0.03

0.056

0.197

0.216

0.083

T

R

j T

th1

(t)

C

th1

C

th2

C

th1

C

th2

C

th3

C

th4

C

th5

C

th6

R

th,n

C

th,n

T

case

amb

External Heatsink

0.0001878

0.0007106

0.000988

0.002791

0.007285

0.063

Ws/K

2005-06-28Rev. 2.4 Page 4