INFINEON SPU03N60S5, SPD03N60S5 User Manual
SPU03N60S5
p
jmax
)
AR
jmax
AR
j
g
SPD03N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPU03N60S5 PG-TO251 Q67040-S4227
SPD03N60S5 PG-TO252 Q67040-S4187
Marking
03N60S5
03N60S5
R
2
V
DS
DS(on)
I
D
600 V
1.4 Ω
3.2 A
PG-TO251PG-TO252
3
1
3
2
1
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current,
t
limited by
Avalanche energy, single pulse
I
= 2.4 A,
D
Avalanche energy, repetitive
I
= 3.2 A,
D
Avalanche current, repetitive
V
V
DD
DD
= 50 V
= 50 V
t
t
AR
T
limited by
limited by
T
T
jmax
Symbol Value Unit
I
I
E
1
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C
C
Operating and storage temperature
V
P
T
D
Dpuls
AS
AR
GS
GS
tot
,
T
A
3.2
2
5.7
100 mJ
0.2
3.2 A
±20
±
30
V
38 W
st
-55... +150
°C
Page 1
2005-10-05Rev. 2.4
Maximum Ratings
SPU03N60S5
SPD03N60S5
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Symbol Value Unit
dv/dt 20 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
Symbol Values Unit
R
thJC
R
thJA
R
thJA
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature, *)
2)
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
- - 3.3 K/W
-
-
-
-
-
-
75
75
50
- - 260 °C
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=3.2A - 700 -
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
GS(th)
DSS
GSS
DS(on)
ID=135µΑ, VGS=V
VDS=600V, VGS=0V,
=25°C,
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=2A,
=25°C
T
j
=150°C
T
j
*) TO252: reflow soldering, MSL3; TO251: wavesoldering
min. typ. max.
3.5 4.5 5.5
DS
-
-
-
-
0.5
-
1.26
3.4
µA
1
70
Ω
1.4
-
Page 2
2005-10-05Rev. 2.4
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPU03N60S5
SPD03N60S5
Parameter
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Symbol Conditions Values Unit
min. typ. max.
V
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
≥2*I
DS
D*RDS(on)max
I
=2A
D
VGS=0V, VDS=25V,
f=1MHz
VDD=350V, VGS=0/10V,
I
=3.2A, RG=20Ω
D
VDD=350V, ID=3.2A - 3.5 - nC
,
- 1.8 - S
- 420 - pF
- 150 -
- 3.6 -
- 35 - ns
- 25 -
- 40 -
- 15 22.5
- 7 -
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
g
(plateau)
VDD=350V, ID=3.2A,
=0 to 10V
V
GS
VDD=350V, ID=3.2A - 8 - V
- 12.4 16
=EAR*f.
AV
Page 3
2005-10-05Rev. 2.4
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPU03N60S5
SPD03N60S5
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
SD
rr
rr
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.054 K/W
0.103
0.178
0.757
0.682
0.202
min. typ. max.
TC=25°C - - 3.2 A
- - 5.7
VGS=0V, IF=I
VR=350V, IF=IS ,
/dt=100A/µs
di
F
S
- 1 1.2 V
- 1000 1700 ns
- 2.3 - µC
Thermal capacitance
C
C
C
C
C
C
th1
th2
th3
th4
th5
th6
0.00005232
0.0002034
0.0002963
0.0009103
0.002084
0.024
Ws/K
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
Page 4
th,n
th,n
T
case
amb
External Heatsink
2005-10-05Rev. 2.4
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