INFINEON SPI80N08S2-07, SPP80N08S2-07, SPB80N08S2-07 User Manual

OptiMOS Power-Transistor

j

stg

Feature

• N-Channel

• Enhancement mode

• 175°C operating temperature

SPI80N08S2-07

SPP80N08S2-07,SPB80N08S2-07

Product Summary

V

DS

R

DS(on)

I

D

max. SMD version 7.1 mΩ

75 V

80 A

• Avalanche rated

P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1

• dv/dt rated

Type Package Ordering Code

SPP80N08S2-07 P- TO220 -3-1 Q67040-S4263 SPB80N08S2-07 P- TO263 -3-2 Q67040-S4264

SPI80N08S2-07 P- TO262 -3-1 Q67060-S6082

Marking

2N0807 2N0807 2N0807

Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit

Continuous drain current

TC=25°C

1)

I

D

80

A

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80 A , VDD=25V, RGS=25Ω

Repetitive avalanche energy, limited by T

Reverse diode dv/dt

IS=80A, VDS=60V, di/dt=200A/µs, T

jmax

=175°C

jmax

2)

I

E

dv/dt 6 kV/µs

Gate source voltage V Power dissipation

TC=25°C

P

Operating and storage temperature T IEC climatic category; DIN IEC 68-1

Page 1

D puls

AS

AR

GS tot

, T

80

320

810 mJ

30

±20

300 W

-55... +175 55/175/56

2003-05-09

V

°C

SPI80N08S2-07

SPP80N08S2-07,SPB80N08S2-07

Thermal Characteristics Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:

@ min. footprint @ 6 cm2 cooling area

3)

R R

R

thJC thJA

thJA

- 0.3 0.5 K/W

- - 62

-

62 40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

ID=250µA

Zero gate voltage drain current

VDS=75V, VGS=0V, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

75 - - V

2.1 3 4

-

0.01

1

µA

VDS=75V, VGS=0V, Tj=125°C

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=10V, ID=66A VGS=10, ID=66A, SMD version

1

Current limited by bondwire ; with an R

information see app.-note ANPS071E available at www.infineon.com/optimos 2

Defined by design. Not subject to production test.

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4

Diagrams are related to straight lead versions

2)

I

GSS

4)

= 0.5K/W the chip is able to carry ID= 132A at 25°C, for detailed

thJC

R

DS(on)

-

1

100

- 1 100 nA

-

5.7

5.4

7.4

7.1

mΩ

Page 2

2003-05-09

SPI80N08S2-07

SPP80N08S2-07,SPB80N08S2-07

Electrical Characteristics Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C Output capacitance C

Reverse transfer capacitance C Turn-on delay time t Rise time t Turn-off delay time t Fall time t

Gate Charge Characteristics

Gate to source charge Q Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

fs

iss oss

rss d(on) r

d(off) f

gs

gd

g

(plateau)

VDS≥2*ID*R ID=80A

VGS=0V, VDS=25V, f=1MHz

DS(on)max

,

51 102 - S

- 4610 6130 pF

- 1000 1330

- 416 620

VDD=40V, VGS=10V,

ID=80A,

RG=2.2Ω

- 17 26 ns

- 34 52

- 56 85

- 33 50

VDD=60V, ID=80A - 28 37 nC

- 77 116

VDD=60V, ID=80A, VGS=0 to 10V

VDD=60V, ID=80A - 5.5 - V

- 138 180

Reverse Diode

Inverse diode continuous

I

forward current Inv. diode direct current, pulsed

I

Inverse diode forward voltage V

Reverse recovery time t Reverse recovery charge Q

S

SM

SD

rr

TC=25°C - - 80 A

- - 320

VGS=0V, IF=80A - 0.9 1.3 V VR=40V, I

diF/dt=100A/µs

Page 3

F=lS

,

- 110 140 ns

- 470 590 nC

2003-05-09

SPI80N08S2-07

SPP80N08S2-07,SPB80N08S2-07

1 Power dissipation

P

= f (TC)

tot

parameter: VGS≥ 6 V

SPP80N08S2-07

320

W

240

tot

200

P

160

120

80

40

0

0 20 40 60 80 100 120 140 160°C190

2 Drain current

ID = f (TC) parameter: VGS≥ 10 V

SPP80N08S2-07

90

A

70

60

D

I

50

40

30

20

10

0

0 20 40 60 80 100 120 140 160°C 190

T

C

T

C

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TC = 25 °C

3

SPP80N08S2-07

10

A

D

I

DS(on)

=

10

/

DS

V

0

2

10

D

I

R

1

10

0

10

-1

10

4 Max. transient thermal impedance

Z

= f (tp)

thJC

parameter : D = tp/T

1

SPP80N08S2-07

10

K/W

t

= 3.7µs

p

0

10

10 µs

thJC

-1

10

100 µs

1 ms

1

V

DS

10

2

Z

D = 0.50

0.20

0.10

0.05

0.02

0.01

-3

10

-2

t

0

s

10

p

10

-2

-3

-4

10

single pulse

-7

10

-6

-5

10

-4

10

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2003-05-09

SPI80N08S2-07

SPP80N08S2-07,SPB80N08S2-07

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 80 µs

SPP80N08S2-07

190

Ptot = 300W

A

i

160

140

120

D

I

100

80

60

40

20

0

0 0.5 1 1.5 2 2.5 3 3.5 4

j

VGS [V]

h

g

f

e

d

c

b

a

a 4.5 b 5.0 c 5.3 d 5.5 e 5.8 f 6.0 g 6.3 h 6.5 i 6.8 j 10.0

V

DS

6 Typ. drain-source on resistance

R

parameter: V

5

= f (ID)

DS(on)

GS

SPP80N08S2-07

26

m Ω

VGS [V] =

d

e

5.5

5.8

d

f

6.0

22 20 18

DS(on)

16

R

14 12 10

8 6 4 2 0

0 20 40 60 80 100 120

e

g

h

6.3

6.5

f

i

j

6.8

10.0

g

h

i

j

A

160

I

D

7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x R

DS(on)max

parameter: tp = 80 µs

160

A

120

D

100

I

80

60

40

20

0

0 1 2 3 4 5

V

GS

V

8 Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter: g

120

S

100

90 80

fs

g

70 60 50 40 30 20 10

7

0

0 20 40 60 80 A 120

fs

I

D

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2003-05-09

SPI80N08S2-07

SPP80N08S2-07,SPB80N08S2-07

9 Drain-source on-state resistance

R

DS(on)

= f (Tj)

parameter : ID = 66 A, VGS = 10 V

SPP80N08S2-07

30

mΩ

24 22 20

DS(on)

R

18 16 14 12 10

8 6 4 2 0

-60 -20 20 60 100 140

98%

typ

°C

10 Typ. gate threshold voltage

V

parameter: VGS = V

200

T

j

= f (Tj)

GS(th)

DS

4

V

3

GS(th)

2.5

V

2

1.5

1

0.5

0

-60 -20 20 60 100 °C 180

250 µA

1.25 mA

T

j

11 Typ. capacitances

C = f (VDS) parameter: VGS=0V, f=1 MHz

5

10

pF

4

10

C

3

10

2

10

0 5 10 15 20 V 30

iss

C

oss

C

rss

V

DS

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

3

SPP80N08S2-07

10

A

2

10

F

I

1

10

Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%)

0

10

0 0.4 0.8 1.2 1.6 2 2.4

V

SD

3

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2003-05-09

SPI80N08S2-07

SPP80N08S2-07,SPB80N08S2-07

13 Typ. avalanche energy

EAS = f (Tj) par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω

850

mJ

700

600

AS

E

500

400

300

200

100

0

25 45 65 85 105 125 145 °C 185

T

14 Typ. gate charge

V

GS

= f (Q

Gate

)

parameter: ID = 80 A pulsed

SPP80N08S2-07

16

V

12

V0,2

GS

10

V

8

6

4

2

0

0 20 40 60 80 100 120 140 160nC190

j

DS max

0,8 V

DS max

Q

Gate

15 Drain-source breakdown voltage

V

(BR)DSS

= f (Tj)

parameter: ID=10 mA

SPP80N08S2-07

92

V

88 86 84

(BR)DSS

V

82 80 78 76 74 72 70 68

-60 -20 20 60 100 140

°C

200

T

j

Page 7

2003-05-09

SPI80N08S2-07

SPP80N08S2-07,SPB80N08S2-07

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Further information

Please notice that the part number is BSPP80N08S2-07 and BSPB80N08S2-07, for simplicity the device is referred to by the term SPP80N08S2-07 and SPB80N08S2-07 throughout this documentation.

Page 8

2003-05-09

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

INFINEON SPI80N08S2-07, SPP80N08S2-07, SPB80N08S2-07 User Manual

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