SPP80N06S2L-07
SPB80N06S2L-07
OptiMOS Power-Transistor
j
stg
Feature
• N-Channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
P- TO263 -3-2 P- TO220 -3-1
55 V
7 mΩ
80 A
Type Package Ordering Code
SPP80N06S2L-07 P- TO220 -3-1 Q67040-S4285
SPB80N06S2L-07 P- TO263 -3-2 Q67040-S4288
Marking
2N06L07
2N06L07
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
1)
I
D
80
A
80
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
IS=80A, VDS=44V, di/dt=200A/µs, T
jmax
=175°C
jmax
I
D puls
E
AS
2)
E
AR
dv/dt 6 kV/µs
320
450 mJ
21
Gate source voltage V
Power dissipation
TC=25°C
Operating and storage temperature T
IEC climatic category; DIN IEC 68-1
Page 1
P
GS
tot
, T
±20
210 W
-55... +175
55/175/56
V
°C
2003-05-09
SPP80N06S2L-07
SPB80N06S2L-07
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
3)
R
R
R
thJC
thJA
thJA
- 0.46 0.7 K/W
- - 62
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
ID=150µA
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
55 - - V
1.2 1.6 2
-
0.01
1
µA
VDS=55V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=60A
Drain-source on-state resistance
VGS=10V, ID=60A
1
Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
= 0.7K/W the chip is able to carry ID= 121A at 25°C, for detailed
thJC
I
GSS
R
DS(on)
R
DS(on)
-
1
100
- 1 100 nA
- 7.1 10
- 5.6 7
mΩ
Page 2
2003-05-09
SPP80N06S2L-07
SPB80N06S2L-07
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
(plateau)
VDS≥2*ID*R
ID=80A
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
52 104 - S
- 3160 4210 pF
- 740 990
- 210 310
VDD=30V, VGS=10V,
ID=80A,
RG=2Ω
- 18 27 ns
- 35 52
- 28 42
- 31 47
VDD=44V, ID=80A - 11 14 nC
- 32 48
VDD=44V, ID=80A,
VGS=0 to 10V
VDD=44V, ID=80A - 3.5 - V
- 95 130
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed
I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
TC=25°C - - 80 A
- - 320
VGS=0V, IF=80A - 0.9 1.3 V
VR=30V, I
diF/dt=100A/µs
Page 3
F=lS
,
- 59 75 ns
- 80 100 nC
2003-05-09
SPP80N06S2L-07
SPB80N06S2L-07
1 Power dissipation
P
= f (TC)
tot
2 Drain current
ID = f (TC)
parameter: VGS≥ 4 V
SPP80N06S2L-07
240
W
200
180
160
tot
P
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160°C190
parameter: VGS≥ 10 V
SPP80N06S2L-07
90
A
70
60
D
I
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160°C 190
T
C
T
C
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
3
SPP80N06S2L-07
10
A
D
I
/
2
10
D
I
1
10
0
10
-1
10
DS
V
=
DS(on)
R
0
10
10
4 Max. transient thermal impedance
Z
= f (tp)
thJC
parameter : D = tp/T
SPP80N06S2L-07
1
10
K/W
t
= 10.0µs
p
100 µs
1 ms
1
V
V
DS
10
2
thJC
Z
10
10
10
10
10
10
-1
-2
-3
-4
-5
0
10
single pulse
-7
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-6
-5
-4
-3
10
10
10
10
-2
t
0
s
10
p
Page 4
2003-05-09
SPP80N06S2L-07
SPB80N06S2L-07
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP80N06S2L-07
190
Ptot = 210W
A
160
140
120
D
I
100
80
60
40
20
0
0 0.5 1 1.5 2 2.5 3 3.5 4
h
g
R
parameter: V
DS(on)
24
= f (ID)
GS
SPP80N06S2L-07
m Ω
f
VGS [V]
e
d
c
b
a
a 3.0
b 3.2
c 3.5
d 3.8
e 4.0
f 4.5
g 5.0
h 10.0
V
V
DS
20
18
16
DS(on)
R
14
12
10
8
6
4
VGS [V] =
c
2
5
0
d
3.5
3.8
0 20 40 60 80
c
e
f
4.0
g
4.5
5.0
h
10.0
d
e
f
g
h
A
120
I
D
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: tp = 80 µs
160
A
120
D
100
I
80
60
40
20
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
V
GS
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: g
110
S
90
80
fs
70
g
60
50
40
30
20
10
0
0 20 40 60 80 A 110
fs
I
D
Page 5
2003-05-09
SPP80N06S2L-07
SPB80N06S2L-07
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
= f (Tj)
parameter : ID = 60 A, VGS = 10 V
SPP80N06S2L-07
26
mΩ
22
20
18
DS(on)
16
R
14
12
10
8
6
4
2
0
-60 -20 20 60 100 140
98%
typ
°C
V
parameter: VGS = V
GS(th)
= f (Tj)
DS
2
V
1.6
1.4
GS(th)
V
1.2
1
0.8
0.6
0.4
0.2
200
T
j
0
-60 -20 20 60 100 °C 180
150 µA
750 µA
T
j
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
4
10
pF
C
3
10
2
10
0 5 10 15 20
C
C
C
iss
oss
rss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
3
SPP80N06S2L-07
10
A
2
10
F
I
1
10
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0
10
V
30
V
DS
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
Page 6
2003-05-09
SPP80N06S2L-07
SPB80N06S2L-07
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj)
par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω
450
mJ
350
300
AS
E
250
200
150
100
50
0
25 50 75 100 125 °C 175
T
V
GS
= f (Q
Gate
)
parameter: ID = 80 A pulsed
SPP80N06S2L-07
16
V
12
GS
10
V
8
6
4
2
0
0 20 40 60 80 100 120
j
V0,2
DS max
0,8 V
DS max
nC
Q
150
Gate
15 Drain-source breakdown voltage
V
(BR)DSS
= f (Tj)
parameter: ID=10 mA
SPP80N06S2L-07
66
V
62
(BR)DSS
60
V
58
56
54
52
50
-60 -20 20 60 100 140
°C
200
T
j
Page 7
2003-05-09
SPP80N06S2L-07
SPB80N06S2L-07
Published by
Infineon Technologies AG ,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP80N06S2L-07 and BSPB80N06S2L-07, for simplicity the device is referred
to by the term SPP80N06S2L-07 and SPB80N06S2L-07 throughout this documentation.
Page 8
2003-05-09
Loading...