INFINEON SPI80N06S2L-05, SPP80N06S2L-05, SPB80N06S2L-05 User Manual

OptiMOS Power-Transistor

j

stg

Feature

• N-Channel

• Enhancement mode

• Logic Level

SPI80N06S2L-05

SPP80N06S2L-05,SPB80N06S2L-05

Product Summary

V

DS

R

DS(on)

I

D

max. SMD version 4.5 mΩ

55 V

80 A

• Avalanche rated

P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1

• dv/dt rated

Type Package Ordering Code

SPP80N06S2L-05 P- TO220 -3-1 Q67040-S4246
SPB80N06S2L-05 P- TO263 -3-2 Q67040-S4256

SPI80N06S2L-05 P- TO262 -3-1 Q67060-S7422

Marking

2N06L05
2N06L05
2N06L05

Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit

Continuous drain current

TC=25°C

1)

I

D

80

A

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80 A , VDD=25V, RGS=25Ω

Repetitive avalanche energy, limited by T

Reverse diode dv/dt

IS=80A, VDS=44V, di/dt=200A/µs, T

jmax

=175°C

jmax

2)

I

E

E

dv/dt 6 kV/µs

Gate source voltage V
Power dissipation

TC=25°C

P

Operating and storage temperature T
IEC climatic category; DIN IEC 68-1

Page 1

D puls

AS

AR

GS
tot

, T

80

320

800 mJ

30

±20

300 W

-55... +175
55/175/56

2003-05-09

V

°C

SPI80N06S2L-05

SPP80N06S2L-05,SPB80N06S2L-05

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

3)

R
R

R

thJC
thJA

thJA

- 0.3 0.5 K/W

- - 62

-

-

-

-

62
40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

ID=250µA

Zero gate voltage drain current

VDS=55V, VGS=0V, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

55 - - V

1.2 1.6 2

-

0.01

1

µA

VDS=55V, VGS=0V, Tj=125°C

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=80A
VGS=4.5V, ID=80A, SMD version

Drain-source on-state resistance

VGS=10V, ID=80A
VGS=10V, ID=80A, SMD version

1

Current limited by bondwire ; with an R

information see app.-note ANPS071E available at www.infineon.com/optimos
2

Defined by design. Not subject to production test.

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4

Diagrams are related to straight lead versions

2)

I

GSS

R

DS(on)

4)

= 0.5K/W the chip is able to carry ID= 173A at 25°C, for detailed

thJC

R

DS(on)

-

1

100

- 1 100 nA

-

-

-

-

4.4

4.1

3.6

3.3

6

5.7

4.8

4.5

mΩ

Page 2

2003-05-09

SPI80N06S2L-05

SPP80N06S2L-05,SPB80N06S2L-05

Electrical Characteristics
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C

Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

fs

iss
oss

rss
d(on)
r

d(off)
f

gs

gd

g

(plateau)

VDS≥2*ID*R
ID=80A

VGS=0V, VDS=25V,
f=1MHz

DS(on)max

,

76 152 - S

- 5700 7530 pF

- 1330 1760

- 360 540

VDD=30V, VGS=10V,

ID=80A,

RG=1.3Ω

- 25 38 ns

- 93 140

- 67 100

- 90 135

VDD=44V, ID=80A - 19 25 nC

- 60 90

VDD=44V, ID=80A,
VGS=0 to 10V

VDD=44V, ID=80A - 3.3 - V

- 170 230

Reverse Diode

Inverse diode continuous

I

forward current
Inv. diode direct current, pulsed

I

Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q

S

SM

SD

rr

rr

TC=25°C - - 80 A

- - 320

VGS=0V, IF=80A - 0.9 1.3 V
VR=30V, I

diF/dt=100A/µs

Page 3

F=lS

,

- 65 80 ns

- 125 160 nC

2003-05-09