Infineon SPB70N10L, SPI70N10L, SPP70N10L Schematic [ru]

Preliminary data SPI70N10L
)
j
j
g
SPP70N10L,SPB70N10L
SIPMOS

=
=Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level

175°C operating temperature
Avalanche rated
dv/dt rated
Type Package Ordering Code
SPP70N10L P-TO220-3-1 Q67040-S4175
SPB70N10L P-TO263-3-2 Q67040-S4170
P-TO263-3-2 P-TO220-3-1P-TO262-3-1
Marking
70N10L
70N10L
Product Summary
V
DS
R
DS(on
I
D
100 V
16 m
70 A
SPI70N10L P-TO262-3-1 Q67060-S7428
70N10L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
T
=100°C
C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=70 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by T
Reverse diode dv/dt
IS=70A, VDS=0V, di/dt=200A/µs
max
I
I
E
E
dv/dt 6 kV/µs
Gate source voltage V
Power dissipation
TC=25°C
P
D
D puls
AS
AR
GS
tot
70
50
280
700 mJ
25
±20
250 W
A
V
Operating and storage temperature T
T
,
st
-55... +175
°C
IEC climatic category; DIN IEC 68-1 55/175/56
Page 1
2001-08-24
Preliminary data SPI70N10L
SPP70N10L,SPB70N10L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
R
R
thJC
thJA
thJA
- - 0.6 K/W
- - 62.5
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=2mA
Gate threshold voltage, VGS = V
I
= 2 mA
D
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
100 - - V
1.2 1.6 2
-
0.1
µA
1
V
=100V, VGS=0V, Tj=150°C
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=50A
Drain-source on-state resistance
VGS=10V, ID=50A
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
I
GSS
R
DS(on)
R
DS(on)
-
-
100
- 10 100 nA
- 14 25
- 10 16
2001-08-24
m
Preliminary data SPI70N10L
(p
)
SPP70N10L,SPB70N10L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
VDS
2*ID*R
DS(on)max
I
=50A
D
VGS=0V, VDS=25V,
f=1MHz
,
30 65 - S
- 3630 4540 pF
- 640 800
- 345 430
VDD=50V, VGS=4.5V,
I
=70A, RG=1.3
D
- 70 105 ns
- 250 375
- 250 375
- 95 145
VDD=80V, ID=70A - 10 15 nC
- 34 51
VDD=80V, ID=70A,
V
=0 to 10V
GS
- 160 240
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
lateau
VDD=80V, ID=70A - 3.22 - V
TC=25°C - - 70 A
- - 280
VGS=0V, IF=140A - 1.2 1.8 V
VR=50V, I
di
/dt=100A/µs
F
lS,
=
F
- 100 150 ns
- 600 900 nC
Page 3
2001-08-24
Loading...
+ 6 hidden pages