INFINEON SPP21N50C3, SPI21N50C3, SPA21N50C3 User Manual
SPP21N50C3
j
)
)
j
A
j
A
j
g
SPI21N50C3, SPA21N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPP21N50C3
SPI21N50C3
in TO 220
Package
PG-TO220
PG-TO262
Ordering Code
Q67040-S4565
Q67040-S4564
VDS @ T
R
PG-TO220FP P G-TO262 PG-TO220
3
2
1
DS(on
I
D
max
560 V
0.19 Ω
21 A
Marking
21N50C3
21N50C3
SPA21N50C3
PG-TO220FP
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=10A, V
D
Avalanche energy, repetitive t
I
=21A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
SP000216364
max
jmax
max
2)
21N50C3
Symbol
I
D
I
Dpuls
E
AS
E
AR
I
R
V
GS
V
GS
P
tot
SPP_I
21
13.1
63
690
1
21
±20
±30
208
Value
SPA
21
13.1
63
690
1
21
±20
±30
34.5
Unit
A
1)
1)
A
mJ
A
V
W
T
,
Operating and storage temperature
Reverse diode dv/dt
Rev. 3.0 Page 1
7)
T
st
dv/dt
-55...+150
15
°C
V/ns
2007-08-30
Maximum Ratings
)
S
SPP21N50C3
SPI21N50C3, SPA21N50C3
Parameter
Drain Source voltage slope
V
= 400 V, I
DS
= 21 A, T
D
= 125 °C
j
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
3)
T
4)
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
- - 0.6 K/W
- - 3.6
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 500 - - V
GS
V
=0V, ID=21A - 600 -
GS
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
ID=1000µA, VGS=V
VDS=500V, V
T
=25°C
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=13.1A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.53 -
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
D
-
-
-
-
0.1
-
0.16
0.54
µA
1
100
Ω
0.19
-
Rev. 3.0 Page 2
2007-08-30
Electrical Characteristics
(
)
SPP21N50C3
SPI21N50C3, SPA21N50C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
5)
C
energy related
Effective output capacitance,
6)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*ID*R
DS
I
=13.1A
D
VGS=0V, V
f=1MHz
VGS=0V, V
VDD=380V, V
I
=21A,
D
R
=3.6Ω
G
DS
DS
min. typ. max.
DS(on)max
=25V,
,
- 18 - S
- 2400 - pF
- 1200 -
- 30 -
=400V - 87 -
- 181 -
=0/10V,
GS
- 10 - ns
- 5 -
- 67 -
- 4.5 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6
C
is a fixed capacitance that gives the same charging time as C
o(tr)
7
ISD<=I
Identical low-side and high-side switch.
, di/dt<=200A/us, V
D
DClink
Q
gs
gd
g
plateau
=400V, V
V
=380V, ID=21A - 10 - nC
DD
V
=380V, ID=21A,
DD
V
=0 to 10V
GS
V
=380V, ID=21A - 5 - V
DD
peak<VBR, DSS
, Tj<T
j,max.
oss
while V
oss
while V
- 50 -
- 95 -
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev. 3.0 Page 3
2007-08-30
Electrical Characteristics
720
SPP21N50C3
SPI21N50C3, SPA21N50C3
Parameter
Symbol Conditions Values Unit
min. typ. max.
T
Inverse diode continuous
I
S
=25°C - - 21 A
C
forward current
Inverse diode direct current,
I
SM
- - 63
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
=0V, IF=I
GS
V
=380V, IF=IS ,
R
di
/dt=100A/µs
F
T
=25°C - 1200 - A/µs
j
S
- 1 1.2 V
- 450 ns
- 9 - µC
- 60 - A
V
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPP_I SPP_I
SPA SPA
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.00769 0.00769 K/W C
0.015 0.015 C
0.029 0.029 C
0.114 0.16 C
0.136 0.319 C
0.059 2.523 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0003763 0.0003763 Ws/K
0.001411 0.001411
0.001931 0.001931
0.005297 0.005297
0.012 0.008659
0.091 0.412
External Heatsink
T
case
amb
Rev. 3.0 Page 4
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
1 Power dissipation
P
= f (T
tot
tot
P
240
W
200
180
160
140
120
100
80
60
40
20
)
C
SPP21N50C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (T
tot
35
W
25
tot
P
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
= f ( VDS )
I
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
-1
-2
10
tp = 1 ms
tp = 10 ms
DC
0
10
10
10
C
1
=25°C
10
4 Safe operating area FullPAK
= f (V
I
D
parameter: D = 0, T
10
A
10
D
I
10
10
2
V
3
10
V
DS
10
DS
2
1
0
-1
-2
0
10
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
= 25°C
C
1
10
2
V
3
10
V
DS
Rev. 3.0 Page 5
2007-08-30
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