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j
j
AR
t
j
g
Cool MOS™ Power Transistor
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
P-TO220-3-31 P-TO220-3-1P-TO263-3-2
• Ultra low effective capacitances
P-TO220-3-31
Type Package Ordering Code
SPP20N60C2 P-TO220-3-1 Q67040-S4320
SPB20N60C2 P-TO263-3-2 Q67040-S4322
SPA20N60C2 P-TO220-3-31 Q67040-S4333
Maximum Ratings
Product Summary
V
R
I
3
2
1
Marking
20N60C2
20N60C2
20N60C2
@ T
DS
DS(on)
D
jmax
650 V
0.19 Ω
20 A
Parameter Symbol Value Unit
SPA
1)
20
1)
13
A
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
max
Avalanche energy, single pulse
I
=10A, VDD=50V
D
Avalanche energy, repetitive tAR limited by T
I
=20A, VDD=50V
D
Avalanche current, repetitive tAR limited by T
Reverse diode dv/dt
I
= 20 A, V
S
< VDD, di/dt=100A/µs, T
DS
jmax
=150°C
jmax
max
2)
I
I
E
E
I
dv/dt 6 6 V/ns
Gate source voltage V
Gate source voltage AC (f >1Hz) V
Power dissipation, T
= 25°C P
C
D
D puls
AS
AR
GS
GS
to
SPP_B
20
13
40 40 A
690 690 mJ
1 1
20 20 A
±20 ±20 V
±30 ±30
208 34.5 W
Operating and storage temperature T
Page 1
T
,
st
-55...+150 °C
2002-08-12
SPP20N60C2, SPB20N60C2
A
Final data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
SPA20N60C2
Thermal resistance, junction - case R
Thremal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
3)
Linear derating factor
thJC
thJC_FP
thJ
thJA_FP
thJA
- - 0.6 K/W
- - 3.6
- - 62
- - 80
-
-
-
-
35
-
62
-
1.67
Linear derating factor, FullPAK - - 0.28
Soldering temperature,
T
sold
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
V
(BR)DSS
600 - - V
W/K
Drain-source avalanche breakdown voltage
VGS=0V, ID=20A
Gate threshold voltage, VGS = V
I
=1mA
D
DS
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
= 600 V, VGS = 0 V, Tj = 150 °C
V
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=13A, Tj=25°C
Gate input resistance
f = 1 MHz, open drain
Page 2
V
(BR)DS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
- 700 -
3.5 4.5 5.5
-
-
0.1
-
1
100
- - 100 nA
- 0.16 0.19
- 0.54 -
2002-08-12
µA
Ω
Electrical Characteristics
)
)
f
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Parameter
Symbol Conditions Values Unit
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on
r
d(off
V
≥2*I
DS
D*RDS(on)max
=13A
I
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
=0V to 480V
V
DS
VDD=380V, VGS=0/13V,
=20A,
I
D
=3.6Ω, Tj=125°C
R
G
,
min. typ. max.
- 12 - S
- 3000 - pF
- 1170 -
- 28 -
- 83 -
- 160 -
- 21 - ns
- 51 -
- 56 84
- 6 9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
is a fixed capacitance that gives the same charging time as C
C
o(tr)
Q
gs
gd
g
(plateau)
VDD=350V, ID=20A - 21 - nC
- 46 -
VDD=350V, ID=20A,
=0 to 10V
V
GS
VDD=350V, ID=20A - 8 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 79 103
AV=EAR
*f.
DSS
DSS
.
.
Page 3
2002-08-12
Electrical Characteristics
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Parameter
Symbol Conditions Values Unit
Characteristics
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
recovery current
S
SM
SD
rr
rr
rrm
min. typ. max.
TC=25°C - - 20 A
- - 40
VGS=0V, IF=IS - 1 1.2 V
VR=350V, IF=IS ,
di
/dt=100A/µs
F
- 610 1040 ns
- 12 - µC
- 48 - A
Tj=25°C - 1500 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
SPA SPA
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.007416 0.077 K/W C
0.016 0.015 C
0.021 0.022 C
0.06 0.063 C
0.083 0.214 C
0.038 2.479 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
SPP_BSPP_B
th1
th2
th3
th4
th5
th6
R
th,n
C
th,n
0.0004409 0.000376 Ws/K
0.001462 0.00141
0.0024 0.00192
0.003031 0.00332
0.02 0.019
0.146 0.412
External Heatsink
T
case
amb
Page 4
2002-08-12
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
1 Power dissipation
= f (TC)
P
tot
SPP20N60C2
240
W
200
180
160
tot
P
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120
°C
2 Power dissiaption FullPAK
= f (TC)
P
tot
35
W
25
tot
P
20
15
10
5
160
T
C
0
0 20 40 60 80 100 120
°C
T
160
C
3 Safe operating area
= f ( VDS )
I
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
0
10
10
-1
-2
10
10
C
1
=25°C
10
4 Safe operating area FullPAK
= f (VDS)
I
D
parameter: D = 0, T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
-1
10
2
V
V
DS
10
3
10
-2
10
tp = 10 ms
DC
0
10
C
1
= 25°C
10
2
V
V
DS
10
3
Page 5
2002-08-12
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
5 Transient thermal impedance
= f (tp)
Z
thJC
parameter: D = t
0
10
K/W
-1
10
thJC
Z
-2
10
-3
10
-4
10
-7
10
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
-5
-4
10
10
10
-3
10
6 Transient thermal impedance FullPAK
= f (tp)
Z
thJC
parameter: D = t
1
10
K/W
0
10
thJC
Z
-1
10
-2
10
-3
-2
s
t
0
10
p
10
10
-6
10
/t
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-5
-4
-3
-2
10
10
10
10
-1
s
t
1
10
p
7 Typ. output characteristic
= f (VDS); Tj=25°C
I
D
parameter: t
75
A
60
55
50
D
I
45
40
35
30
25
20
15
10
5
0
0 5 10 15 20
= 10 µs, V
p
20V
15V
12V
11V
GS
10V
9V
8V
7V
V
V
DS
30
8 Typ. output characteristic
= f (VDS); Tj=150°C
I
D
parameter: t
35
A
25
D
I
20
15
10
5
0
0 5 10 15
= 10 µs, V
p
GS
20V
12V
10V
V
9V
8.5V
8V
7.5V
7V
6.5V
6V
V
25
DS
Page 6
2002-08-12
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
9 Typ. drain-source on resistance
R
DS(on)
parameter: T
R
=f(ID)
=150°C, V
j
1.5
Ω
1.3
1.2
1.1
DS(on)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0 5 10 15 20 25 30
GS
6V
6.5V
7V
7.5V
8V
8.5V
9V
10V
12V
20V
A
I
D
40
10 Drain-source on-state resistance
R
DS(on)
parameter : I
= f (Tj)
= 13 A, VGS = 10 V
D
SPP20N60C2
1.1
Ω
0.9
0.8
DS(on)
0.7
R
0.6
0.5
0.4
0.3
0.2
0.1
0
-60 -20 20 60 100
98%
typ
°C
180
T
j
11 Typ. transfer characteristics
= f ( VGS ); V
I
D
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
70
A
60
55
50
45
D
I
40
35
30
25
20
15
10
5
0
0 5 10
25°C
150°C
V
V
GS
20
12 Typ. gate charge
V
= f (Q
GS
parameter: I
SPP20N60C2
16
V
12
GS
10
V
8
6
4
2
0
0 20 40 60 80
)
Gate
= 20 A pulsed
D
0,2
V
DS max
0,8 V
nC
DS max
Q
Gate
120
Page 7
2002-08-12
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
13 Forward characteristics of body diode
= f (VSD)
I
F
parameter: Tj , t
2
SPP20N60C2
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
p = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
14 Typ. switching time
t = f (I
par.: V
), inductive load, Tj=125°C
D
=380V, VGS=0/+13V, RG=3.6Ω
DS
3
10
ns
2
10
t
t
d(on)
1
10
0
10
0 5 10 15 20 25 30 35 40
t
r
t
d(off)
t
f
50
A
I
D
15 Typ. switching time
t = f (R
par.: V
t
), inductive load, Tj=125°C
G
=380V, VGS=0/+13V, ID=20A
DS
3
10
ns
t
d(off)
2
10
1
10
0
10
0 5 10 15 20 25 30
16 Typ. switching losses
1)
E = f (ID), inductive load, Tj=125°C
par.: V
mWs
t
d(on)
t
r
t
f
40
Ω
R
G
E
=380V, VGS=0/+13V, RG=3.6Ω
DS
1.6
*) Eon includes SDP06S60 diode
commutation losses.
1
This chart helps to estimate
the switching power losses.
The values can be different
under other operating conditions.
1.2
1
0.8
0.6
Eon*
0.4
E
off
0.2
0
0 5 10 15 20 25 30 35
A
45
I
D
Page 8
2002-08-12
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
17 Typ. switching losses
1)
E = f(RG), inductive load, Tj=125°C
par.: V
mWs
E
=380V, VGS=0/+13V,ID=20A
DS
1
*) Eon includes SDP06S60 diode
commutation losses.
1
This chart helps to estimate
the switching power losses.
The values can be different
0.8
under other operating conditions.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Eon*
E
off
18 Avalanche SOA
= f (tAR)
I
AR
par.: T
AR
I
≤ 150 °C
j
20
A
10
5
(START)
T
j
=125°C
(START)
T
j
=25°C
0
0 5 10 15 20 25 30
19 Avalanche energy
= f (Tj)
E
AS
par.: I
= 10 A, VDD = 50 V
D
750
mJ
600
550
500
AS
E
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120
°C
Ω
R
T
0
-3
-2
40
G
10
10
-1
10
10 0 10 1 10
2
µs
t
AR
10
4
20 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
160
j
= f (Tj)
SPP20N60C2
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
°C
180
T
j
Page 9
2002-08-12
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
21 Avalanche power losses
= f (f )
P
AR
parameter: E
500
W
AR
P
300
200
100
0
4
10
AR
=1mJ
10
5
Hz
22 Typ. capacitances
C = f (V
parameter: V
10
pF
10
10
C
10
10
6
10
f
10
)
DS
=0V, f=1 MHz
GS
5
4
C
iss
3
C
2
C
1
0
rss
0 100 200 300 400
oss
V
V
600
DS
23 Typ. C
=f(VDS)
E
oss
14
µJ
12
11
10
oss
9
E
8
7
6
5
4
3
2
1
0
0 100 200 300 400
stored energy
oss
V
V
600
DS
Page 10
2002-08-12
Final data
Definition of diodes switching characteristics
SPP20N60C2, SPB20N60C2
SPA20N60C2
Page 11
2002-08-12
P-TO-220-3-1
±0.4
10
±0.2
3.7
SPP20N60C2, SPB20N60C2
Final data
B
4.44
A
±0.13
1.27
SPA20N60C2
±0.6
±0.2
2.8
0.05
15.38
±0.5
C
±0.9
5.23
13.5
3x
±0.1
0.75
±0.22
1.17
2.54
2x
M
BA0.25
C
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
P-TO-263-3-1 (D2-PAK)
±0.2
0...0.3
±0.3
1
±0.2
9.25
(15)
0...0.15
10
8.5
A
1)
1)
7.55
±0.1
0.75
1.05
2.54
1.27
B
±0.5
4.7
8
˚
±0.1
0.1
2.4
±0.3
2.7
MAX.
4.4
0.5
0.5
2.51
±0.
±0.48
9.98
±0.1
±0.2
0.05
1
5.08
M
BA0.25
1)
Typical
All metal surfaces: tin plated, except area of cut.
Metal surface min. x=7.25, y=6.9
Page 12
0.1
B
2002-08-12
P-TO-220-3-31 (FullPAK)
±0.005
10.5
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
4.7
±0.005
±0.005
9.68
±0.005
3.3
±0.005
±0.005
15.99
14.1
±0.001
1.5
±0.005
12.79
±0.002
6.1
123
±0.005
2.7
±0.005
˚
7
13.6
1.28
+0.003
-0.002
0.7
+0.003
-0.002
2.57
±0.002
0.5
+0.005
-0.002
2.54
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Page 13
2002-08-12
SPP20N60C2, SPB20N60C2
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
SPA20N60C2
Page 14
2002-08-12
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