INFINEON SPP18P06PH Datasheet
SPP18P06PH
SIPMOS
®
Small-Signal-Transistor
Product Summary
Features
• P-Channel
• Enhancement mode
V
DS
R
DS(on),max
I
D
-60 V
0.13
-18.7 A
• Avalanche rated
• dv/dt rated
• 175°C operating temperature
PG-TO220-3-1
• Pb-free lead finishing; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to AEC Q101
Type Package Tape and reel information Marking Lead free
SPP18P06PH
Maximum ratings, at T
PG-TO220-3
=25 °C, unless otherwise specified
j
50pcs/tube 18P06P
Yes
Parameter Symbol Conditions Unit
Value
steady state
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
jmax
I
D
I
D,pulse
E
AS
E
AR
Reverse diode dv/dt dv/dt
Gate source voltage
Power dissipation
Operating and storage temperature
V
GS
P
tot
T
, T
j
ESD class
TA=25 °C
T
=100 °C
A
TA=25 °C
ID=18.7 A, RGS=25
=18.7 A, VDS=48 V,
I
D
di/dt=-200 A/µs,
T
=175 °C
j,max
TA=25 °C
stg
1)
-18.7
-13.2
-74.8
151
8
-6
±20
81.1
"-55 ... +175"
Class 1C( >1000V <2000V)
A
mJ
kV/µs
V
W
°C
Soldering temperature
IEC climatic category; DIN IEC 68-1
260 °C
55/150/56
Rev1.92 page 1 2014-11-21
SPP18P06P H
.
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient, leaded
SMD version, device on PCB:
Electrical characteristics, at T
R
thJC
R
thJA
R
thJA
=25 °C, unless otherwise specified
j
minimal footprint - - 62 K/W
2
cooling area
6 cm
- - 1.85 K/W
--62
1)
--40
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
1)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown air
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)VGS
g
fs
=0 V, ID=-250 µA
VDS=VGS, ID=-
1000 µA
VDS=-60 V, VGS=0 V,
=25 °C
T
j
=-60 V, VGS=0 V,
V
DS
=150 °C
T
j
VGS=-20 V, VDS=0 V
=-10 V, ID=-13.2 A
|VDS|>2|ID|R
=-13.2 A
I
D
DS(on)max
-60 - - V
-2.1 2.7 -4
- -0.1 -1 µA
- -10 -100
- -10 -100 nA
- 102 130
,
510-S
mΩ
Rev1.92 page 2 2014-11-21
SPP18P06P H
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
t
t
t
t
iss
oss
rss
d(on)
r
d(off)
f
=0 V, VDS=-25 V,
V
GS
f =1 MHz
V
=-30 V, VGS=-
DD
=2.7 Ω
G
=-13.2 A,
D
10 V, I
R
- 690 860 pF
- 230 290
- 95 120
- 12.0 18.0 ns
- 5.8 8.7
-2537
- 11 16.5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
=-48 V, ID=-
DD
18.6 A, V
=0 to -10 V
GS
- -4.1 -5.5 nC
- -11 -17
- -21 -28
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
V
I
S
I
S,pulse
V
t
rr
Q
plateau
SD
rr
=25 °C
T
A
VGS=0 V, IF=-18.6 A,
=25 °C
T
j
V
=30 V, IF=|IS|,
R
/dt =100 A/µs
di
F
- -5.94 - V
- - 18.60 A
- - -74.8
- -0.99 -1.33 V
- 70 105 ns
- 139 208 nC
Rev1.92 page 3 2014-11-21
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