INFINEON SPP16N50C3, SPA16N50C3 User Manual
SPP16N50C3
p
jmax
AR
jmax
R
j
g
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package
SPP16N50C3
SPI16N50C3
SPA16N50C3 P
P
G-TO220
PG-TO262
G-TO220-3-31
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
PG-T220-3-31 PG-TO220PG-TO262
3
2
1
P-TO220-3-31
Marking
16N50C3
16N50C3
16N50C3
VDS @ T
R
DS(on)
I
D
jmax
560 V
0.28 Ω
16 A
2
-
-
-
3
2
1
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current,
t
limited by T
Avalanche energy, single pulse
I
=8,
V
D
Avalanche energy, repetitive
I
=16A,
D
DD
=50V
V
DD
=50V
t
AR
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
limited by
limited by
T
T
jmax
2)
Symbol
I
D
I
Dpuls
E
AS
E
AR
I
A
V
GS
V
GS
P
tot
SPP_I
16
10
48
460
0.64
16
±20
±
30
160
Value
SPA
1)
16
1)
10
48
460
0.64
16
±20
±
30
34
Unit
A
A
mJ
A
V
W
Operating and storage temperature T
Reverse diode dv/dt
6)
Page 1
,
T
st
-55...+150
dv/dt
15
°C
V/ns
2005-11-08Rev. 2.6
Maximum Ratings
SPP16N50C3
SPI16N50C3, SPA16N50C3
Parameter
Drain Source voltage slope
VDS = 400 V, ID = 16 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK R
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
3)
Symbol Values Unit
R
thJC
thJC_FP
R
thJA
thJA FP
T
sold
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
- - 0.78 K/W
- - 3.7
- - 62
- - 80
- - 260 °C
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DSS
(BR)DS
GS(th)
DSS
GSS
DS(on)
G
VGS=0V, ID=0.25mA
VGS=0V, ID=16A - 600 -
ID=675µA, VGS=V
VDS=500V, VGS=0V,
=25°C
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=10A
=25°C
T
j
=150°C
T
j
f=1MHz, open drain - 1.5 -
500
2.1 3 3.9
DS
-
-
-
-
- - V
0.1
-
0.25
0.68
1
100
0.28
-
µA
Ω
Page 2
2005-11-08Rev. 2.6
SPI16N50C3, SPA16N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPP16N50C3
Parameter
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Symbol Conditions Values Unit
min. typ. max.
V
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
≥2*I
DS
D*RDS(on)max
I
=10A
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
V
=0V to 400V
DS
VDD=380V, VGS=0/10V,
I
=16A, RG=4.3Ω
D
,
- 14 - S
- 1600 - pF
- 800 -
- 30 -
- 64 -
- 124 -
- 10 - ns
- 8 -
- 50 -
- 8 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Soldering temperature for TO-263: 220°C, reflow
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
is a fixed capacitance that gives the same charging time as C
C
o(tr)
6
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
Q
gs
gd
g
(plateau)
=400V, V
VDD=380V, ID=16A - 7 - nC
VDD=380V, ID=16A,
=0 to 10V
V
GS
VDD=380V, ID=16A - 5 - V
peak<VBR, DSS
, Tj<T
j,max
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
.
- 36 -
- 66 -
=EAR*f.
AV
DSS
DSS
.
.
Page 3
2005-11-08Rev. 2.6
Electrical Characteristics
SPP16N50C3
SPI16N50C3, SPA16N50C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
SPP_I SPA SPP_I SPA
min. typ. max.
TC=25°C - - 16 A
- - 48
VGS=0V, IF=I
VR=380V, IF=IS ,
di
/dt=100A/µs
F
S
- 1 1.2 V
- 420 - ns
- 7 - µC
- 40 - A
Tj=25°C - 1100 - A/µs
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.012 0.012 K/W C
0.023 0.023 C
0.043 0.043 C
0.149 0.176 C
0.17 0.371 C
0.069 2.522 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0002495 0.0002495 Ws/K
0.0009406 0.0009406
0.001298 0.001298
0.00362 0.00362
0.009484 0.008025
0.077 0.412
External Heatsink
T
case
amb
Page 4
2005-11-08Rev. 2.6
SPP16N50C3
SPI16N50C3, SPA16N50C3
1 Power dissipation
P
= f (TC)
tot
SPP16N50C3
170
W
140
120
tot
P
100
80
60
40
20
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (TC)
tot
36
W
28
24
tot
P
20
16
12
8
4
160
T
C
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
I
= f ( VDS )
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10
10
-1
-2
0
10
tp = 1 ms
DC
10
C
1
=25°C
10
4 Safe operating area FullPAK
I
= f (VDS)
D
parameter: D = 0, T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
-1
10
-2
2
V
3
10
V
DS
10
10
tp = 1 ms
tp = 10 ms
DC
0
10
C
1
= 25°C
10
2
V
3
10
V
DS
Page 5
2005-11-08Rev. 2.6
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