SPP11N80C3
)
j
A
j
A
j
g
SPA11N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP11N80C3 PG-TO220 Q67040-S4438
SPA11N80C3 PG-TO220-3-31 SP000216320
Marking
11N80C3
11N80C3
V
DS
R
DS(on
I
D
PG-TO220-3-31 PG-TO220
P-TO220-3-31
3
2
1
800 V
0.45 Ω
11 A
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
max
Avalanche energy, single pulse
I
=2.2A, V
D
Avalanche energy, repetitive t
I
=11A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
jmax
max
2)
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
Symbol Value Unit
I
D
I
Dpuls
E
AS
E
AR
I
R
GS
V
GS
P
tot
SPP
11
7.1
33 33 A
470 470 mJ
0.2 0.2
11 11 A
±20 ±20 V
±30 ±30
156 41 W
SPA
1)
11
7.1
A
1)
T
,
Operating and storage temperature
Rev. 2.4 Page 1 2005-08-24
T
st
-55...+150 °C
Maximum Ratings
)
SPP11N80C3
SPA11N80C3
Parameter
Drain Source voltage slope
V
= 640 V, I
DS
= 11 A, T
D
= 125 °C
j
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
3)
T
thJC
thJC_FP
thJA
thJA_FP
sold
- - 0.8 K/W
- - 3.7
- - 62
- - 80
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
G
V
=0V, ID=0.25mA 800 - - V
GS
V
=0V, ID=11A - 870 -
GS
ID=680µA, VGS=V
VDS=800V, V
T
=25°C
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=7.1A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.7 -
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
DS
-
-
-
-
0.5
-
0.39
1.1
20
200
0.45
µA
Ω
-
Rev. 2.4 Page 2 2005-08-24
Electrical Characteristics
(
)
SPP11N80C3
SPA11N80C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*ID*R
DS
I
=7.1A
D
VGS=0V, V
f=1MHz
V
=0V,
GS
V
=0V to 480V
DS
VDD=400V, V
I
=11A,
D
R
=7.5Ω
G
DS
DS(on)max
=25V,
=0/10V,
GS
min. typ. max.
,
- 7.5 - S
- 1600 - pF
- 800 -
- 40 -
- 44.3 -
- 33.9 -
- 25 - ns
- 15 -
- 72 82
- 7 10
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Soldering temperature for TO-263: 220°C, reflow
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
Q
gs
gd
g
plateau
V
=640V, ID=11A - 6 - nC
DD
V
=640V, ID=11A,
DD
V
=0 to 10V
GS
V
=640V, ID=11A - 6 - V
DD
while V
oss
while V
oss
- 25 -
- 50 60
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev. 2.4 Page 3 2005-08-24
Electrical Characteristics
SPP11N80C3
SPA11N80C3
Parameter
Symbol Conditions Values Unit
min. typ. max.
T
Inverse diode continuous
I
S
=25°C - - 11 A
C
forward current
Inverse diode direct current,
I
SM
- - 33
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
=0V, IF=I
GS
V
=640V, IF=IS ,
R
di
/dt=100A/µs
F
T
=25°C - 1000 - A/µs
j
S
- 1 1.2 V
- 550 - ns
- 10 - µC
- 33 - A
V
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPP SPP
SPA SPA
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.012 0.012 K/W C
0.023 0.023 C
0.043 0.043 C
0.154 0.176 C
0.175 0.371 C
0.071 2.522 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0002493 0.0002493 Ws/K
0.0009399 0.0009399
0.001298 0.001298
0.003617 0.003617
0.009186 0.00802
0.074 0.412
External Heatsink
T
case
amb
Rev. 2.4 Page 4 2005-08-24
SPP11N80C3
SPA11N80C3
1 Power dissipation
P
= f (T
tot
tot
P
170
W
140
120
100
80
60
40
20
)
C
SPP11N80C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (T
tot
45
W
35
30
tot
P
25
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
= f ( VDS )
I
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
-1
10
-2
10
0
10
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
1
10
=25°C
10
4 Safe operating area FullPAK
= f (V
I
D
parameter: D = 0, T
10
A
10
D
I
10
10
2
V
3
10
V
DS
10
)
DS
= 25°C
C
2
1
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
-1
-2
0
10
tp = 1 ms
tp = 10 ms
DC
1
10
10
2
V
3
10
V
DS
Rev. 2.4 Page 5 2005-08-24
SPP11N80C3
SPA11N80C3
5 Transient thermal impedance
Z
= f (tp)
thJC
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
10
-5
10
-4
10
-3
parameter: D = t
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
10
-7
10
6 Transient thermal impedance FullPAK
Z
= f (t
thJC
parameter: D = t
10
K/W
10
10
thJC
Z
10
10
10
-1
10
s
t
p
10
)
p
/t
p
2
1
0
-1
D = 0.5
D = 0.2
-2
-3
-4
10-710-610-510-410-310-210
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-1
1
10
s
t
p
7 Typ. output characteristic
= f (VDS); T
I
D
parameter: t
35
A
25
D
I
20
15
10
5
0
0 4 8 12 16 20
=25°C
j
= 10 µs, V
p
20V
8V
7V
GS
6.5V
6V
5.5V
5V
4V
V
8 Typ. output characteristic
= f (VDS); T
I
D
parameter: t
18
A
14
12
D
I
10
8
6
4
2
26
V
DS
0
0 4 8 12 16 20
=150°C
j
= 10 µs, V
p
20V
6.5V
6V
GS
5.5V
5V
4.5V
4V
V
26
V
DS
Rev. 2.4 Page 6 2005-08-24
SPP11N80C3
SPA11N80C3
9 Typ. drain-source on resistance
R
DS(on)
parameter: T
R
=f(I
)
D
=150°C, V
j
3
GS
Ω
4V
2.6
2.4
DS(on)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0 2 4 6 8 10 12 14
4.5V
5V
5.5V
6V
6.5V
A
20V
I
D
18
10 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 7.1 A, V
D
SPP11N80C3
2.6
Ω
2.2
2
1.8
DS(on)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100
98%
typ
= 10 V
GS
°C
180
T
j
11 Typ. transfer characteristics
= f ( VGS ); VDS≥ 2 x ID x R
I
D
DS(on)max
parameter: tp = 10 µs
35
A
25
D
I
20
15
10
5
0
0 2 4 6 8 10 12 14 16
25°C
150°C
V
12 Typ. gate charge
= f (Q
V
GS
parameter: I
SPP11N80C3
16
V
12
GS
10
V
8
6
4
2
20
V
GS
0
0 20 40 60 80
)
Gate
= 11 A pulsed
D
0,2
V
DS max
0,8 V
DS max
nC
Q
110
Gate
Rev. 2.4 Page 7 2005-08-24
SPP11N80C3
j
SPA11N80C3
13 Forward characteristics of body diode
I
= f (VSD)
F
parameter: T
2
SPP11N80C3
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
14 Avalanche SOA
I
= f (tAR)
AR
par.: T
I
≤ 150 °C
j
11
A
9
8
7
AR
6
5
4
3
2
T
j(START)
1
0
10-310-210-110010110
=125°C
T
j(START)
=25°C
2
µs
t
AR
10
4
15 Avalanche energy
= f (T
E
AS
par.: I
mJ
AS
E
500
400
350
300
250
200
150
100
)
j
= 2.2 A, V
D
50
0
20 40 60 80 100 120
DD
= 50 V
°C
16 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
150
T
j
= f (T
SPP11N80C3
980
V
940
920
900
880
860
840
820
800
780
760
740
720
-60 -20 20 60 100
)
j
°C
180
T
j
Rev. 2.4 Page 8 2005-08-24
SPP11N80C3
SPA11N80C3
17 Avalanche power losses
P
= f (f )
AR
parameter: E
200
W
AR
P
100
50
0
4
10
=0.2mJ
AR
10
5
Hz
18 Typ. capacitances
C = f (V
parameter: V
10
pF
10
C
10
10
6
10
f
10
)
DS
=0V, f=1 MHz
GS
4
C
iss
3
2
1
0
0 100 200 300 400 500 600
C
oss
C
rss
V
800
V
DS
19 Typ. C
=f(V
E
oss
12
µJ
8
oss
E
6
4
2
0
0 100 200 300 400 500 600
stored energy
oss
)
DS
V
800
V
DS
Rev. 2.4 Page 9 2005-08-24
Definition of diodes switching characteristics
SPP11N80C3
SPA11N80C3
Rev. 2.4 Page 10 2005-08-24
PG-TO220-3-1, PG-TO220-3-21
SPP11N80C3
SPA11N80C3
Rev. 2.4 Page 11
2005-08-24
PG-TO220-3-31 (FullPAK)
SPP11N80C3
SPA11N80C3
Rev. 2.4 Page 12
2005-08-24
SPP11N80C3
SPA11N80C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.4 Page 13 2005-08-24
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