INFINEON SPP11N80C3, SPA11N80C3 User Manual
SPP11N80C3
)
j
A
j
A
j
g
SPA11N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP11N80C3 PG-TO220 Q67040-S4438
SPA11N80C3 PG-TO220-3-31 SP000216320
Marking
11N80C3
11N80C3
V
DS
R
DS(on
I
D
PG-TO220-3-31 PG-TO220
P-TO220-3-31
3
2
1
800 V
0.45 Ω
11 A
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
max
Avalanche energy, single pulse
I
=2.2A, V
D
Avalanche energy, repetitive t
I
=11A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
jmax
max
2)
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
Symbol Value Unit
I
D
I
Dpuls
E
AS
E
AR
I
R
GS
V
GS
P
tot
SPP
11
7.1
33 33 A
470 470 mJ
0.2 0.2
11 11 A
±20 ±20 V
±30 ±30
156 41 W
SPA
1)
11
7.1
A
1)
T
,
Operating and storage temperature
Rev. 2.4 Page 1 2005-08-24
T
st
-55...+150 °C
Maximum Ratings
)
SPP11N80C3
SPA11N80C3
Parameter
Drain Source voltage slope
V
= 640 V, I
DS
= 11 A, T
D
= 125 °C
j
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
3)
T
thJC
thJC_FP
thJA
thJA_FP
sold
- - 0.8 K/W
- - 3.7
- - 62
- - 80
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
G
V
=0V, ID=0.25mA 800 - - V
GS
V
=0V, ID=11A - 870 -
GS
ID=680µA, VGS=V
VDS=800V, V
T
=25°C
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=7.1A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.7 -
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
DS
-
-
-
-
0.5
-
0.39
1.1
20
200
0.45
µA
Ω
-
Rev. 2.4 Page 2 2005-08-24
Electrical Characteristics
(
)
SPP11N80C3
SPA11N80C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*ID*R
DS
I
=7.1A
D
VGS=0V, V
f=1MHz
V
=0V,
GS
V
=0V to 480V
DS
VDD=400V, V
I
=11A,
D
R
=7.5Ω
G
DS
DS(on)max
=25V,
=0/10V,
GS
min. typ. max.
,
- 7.5 - S
- 1600 - pF
- 800 -
- 40 -
- 44.3 -
- 33.9 -
- 25 - ns
- 15 -
- 72 82
- 7 10
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Soldering temperature for TO-263: 220°C, reflow
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
Q
gs
gd
g
plateau
V
=640V, ID=11A - 6 - nC
DD
V
=640V, ID=11A,
DD
V
=0 to 10V
GS
V
=640V, ID=11A - 6 - V
DD
while V
oss
while V
oss
- 25 -
- 50 60
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev. 2.4 Page 3 2005-08-24
Electrical Characteristics
SPP11N80C3
SPA11N80C3
Parameter
Symbol Conditions Values Unit
min. typ. max.
T
Inverse diode continuous
I
S
=25°C - - 11 A
C
forward current
Inverse diode direct current,
I
SM
- - 33
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
=0V, IF=I
GS
V
=640V, IF=IS ,
R
di
/dt=100A/µs
F
T
=25°C - 1000 - A/µs
j
S
- 1 1.2 V
- 550 - ns
- 10 - µC
- 33 - A
V
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPP SPP
SPA SPA
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.012 0.012 K/W C
0.023 0.023 C
0.043 0.043 C
0.154 0.176 C
0.175 0.371 C
0.071 2.522 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0002493 0.0002493 Ws/K
0.0009399 0.0009399
0.001298 0.001298
0.003617 0.003617
0.009186 0.00802
0.074 0.412
External Heatsink
T
case
amb
Rev. 2.4 Page 4 2005-08-24
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