INFINEON SPP11N65C3 User Manual

PP11N65C3,SPA11N65C3

)

j

AR

SPI11N65C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

Type Package Ordering Code

SPP11N65C3 PG-TO220 Q67040-S4557

SPA11N65C3 PG-TO220FP SP000216318

SPI11N65C3 PG-TO262 Q67040-S4561

PG-TO262 PG-TO220FP PG-TO220

Marking

11N65C3

V

R

DS(on

D

650 V

0.38 Ω

I

D

11 A

Maximum Ratings

Parameter

Continuous drain current

TC = 25 °C

= 100 °C

T

C

Pulsed drain current, tp limited by T

max

Avalanche energy, single pulse

ID=2.5A, VDD=50V

Avalanche energy, repetitive tAR limited by T

=4A, VDD=50V

I

D

Avalanche current, repetitive tAR limited by T

jmax

max

2)

Gate source voltage V

Gate source voltage AC (f >1Hz)

Power dissipation, T

= 25°C P

C

Symbol Value Unit

I

D

I

Dpuls

E

AS

E

AR

I

GS

V

GS

tot

SPP_I

11

7

33 33 A

340 340 mJ

0.6 0.6

4 4 A

±20 ±20 V

±30 ±30

125 33 W

SPA

1)

11

1)

7

A

Operating and storage temperature T

,

T

j

stg

-55...+150 °C

2007-08-30 Rev. 2.9 Page 1

Maximum Ratings

SPP11N65C3,SPA11N65C3

SPI11N65C3

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

Symbol Value Unit

dv/dt 50 V/ns

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Symbol Values Unit

R

Thermal resistance, junction - case, FullPAK R

Thermal resistance, junction - ambient, leaded

R

Thermal resistance, junction - ambient, FullPAK R

SMD version, device on PCB:

R

@ min. footprint

@ 6 cm

2

cooling area

Soldering temperature, wavesoldering

3)

T

1.6 mm (0.063 in.) from case for 10s

thJC

thJC_FP

thJA

thJA_FP

thJA

sold

min. typ. max.

- - 1 K/W

- - 3.8

- - 62

- - 80

-

35

62

-

- - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Drain-source breakdown voltage

Drain-Source avalanche

Symbol Conditions Values Unit

V

(BR)DSS

V

(BR)DS

VGS=0V, ID=0.25mA

VGS=0V, ID=4A - 730 -

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

GS(th)

DSS

GSS

DS(on)

G

ID=500µA, VGS=V

VDS=600V, VGS=0V,

=25°C

T

j

Tj=150°C

VGS=20V, VDS=0V - - 100 nA

VGS=10V, ID=7A

=25°C

T

j

Tj=150°C

f=1MHz, open drain - 0.86 -

DS

min. typ. max.

650

- - V

2.1 3 3.9

-

0.1

-

0.34

0.92

1

100

0.38

-

µA

Ω

2007-08-30 Rev. 2.9 Page 2

Electrical Characteristics

SPP11N65C3,SPA11N65C3

SPI11N65C3

Parameter

Symbol Conditions Values Unit

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Effective output capacitance,

4)

C

energy related

Effective output capacitance,

5)

C

time related

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

fs

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

VDS≥2*ID*R

ID=7A

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

V

=0V to 480V

DS

VDD=380V, VGS=0/10V,

I

=11A,

D

=6.8Ω

R

G

DS(on)max

,

min. typ. max.

- 8.3 - S

- 1200 - pF

- 390 -

- 30 -

- 45 -

- 85 -

- 10 - ns

- 5 -

- 44 70

- 5 9

Gate Charge Characteristics

Gate to source charge

Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Limited only by maximum temperature

2

Repetitve avalanche causes additional power losses that can be calculated as P

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4

is a fixed capacitance that gives the same stored energy as C

C

o(er)

5

C

is a fixed capacitance that gives the same charging time as C

o(tr)

Q

gs

gd

g

(plateau)

VDD=480V, ID=11A - 5.5 - nC

- 22 -

VDD=480V, ID=11A,

V

=0 to 10V

GS

VDD=480V, ID=11A - 5.5 - V

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 45 60

AV=EAR

*f.

DSS

.

2007-08-30 Rev. 2.9 Page 3

Electrical Characteristics

SPP11N65C3,SPA11N65C3

SPI11N65C3

Parameter

Inverse diode continuous

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Peak rate of fall of reverse

SD

rr

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

Symbol

SPP_I SPP_I

Value Unit Symbol Value Unit

SPA SPA

min. typ. max.

TC=25°C - - 11 A

- - 33

VGS=0V, IF=I

VR=480V, IF=IS ,

di

/dt=100A/µs

F

S

- 1 1.2 V

- 400 600 ns

- 6 - µC

- 41 - A

Tj=25°C - 1200 - A/µs

R

th1

th2

th3

th4

th5

th6

0.015 0.15 K/W C

0.03 0.03 C

0.056 0.056 C

0.197 0.194 C

0.216 0.413 C

0.083 2.522 C

T

R

j T

th1

P

(t)

tot

C

th1

C

th2

R

C

th,n

th1

th2

th3

th4

th5

th6

0.0001878 0.0001878 Ws/K

0.0007106 0.0007106

0.000988 0.000988

0.002791 0.002791

0.007285 0.007401

0.063 0.412

External Heatsink

T

case

amb

2007-08-30 Rev. 2.9 Page 4

SPP11N65C3,SPA11N65C3

SPI11N65C3

1 Power dissipation

= f (TC)

P

tot

SPP11N65C3

140

W

120

110

100

tot

90

P

80

70

60

50

40

30

20

10

0

0 20 40 60 80 100 120

°C

2 Power dissipation FullPAK

= f (TC)

P

tot

35

W

25

tot

P

20

15

10

5

160

T

C

0

0 20 40 60 80 100 120 °C 160

T

C

3 Safe operating area

= f ( VDS )

I

D

parameter : D = 0 , T

2

10

A

1

10

D

I

0

10

tp = 0.0008 ms tp = 0.01 ms

-1

10

-2

10

tp = 0.1 ms tp = 1 ms DC

0

10

C

1

=25°C

10

4 Safe operating area FullPAK

= f (VDS)

I

D

parameter: D = 0, T

2

10

A

1

10

D

I

0

10

tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms

-1

10

2

V

3

10

V

DS

10

-2

10

tp = 1 ms tp = 10 ms DC

0

= 25°C

C

1

10

2

V

3

10

V

DS

2007-08-30 Rev. 2.9 Page 5

INFINEON SPP11N65C3 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual