INFINEON SPP08P06P User Manual
SIPMOS Power-Transistor
SPP08P06P
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
dv/dt rated
·
175°C operating temperature
Type Package Ordering Code
SPP08P06P PG-TO220-3-1 Q67040-S4729
Maximum Ratings,at
T
= 25 °C, unless otherwise specified
j
Product Summary
Drain source voltage V
Drain-source on-state resistance
Continuous drain current A
V
DS
R
DS(on)
I
D
Pin 1 PIN 2/4 PIN 3
G D S
Parameter Symbol UnitValue
Continuous drain current
I
D
-60
0.3
-8.8
W
A
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche energy, single pulse
I
= -8.8 A ,
D
V
DD
= -25 V,
R
GS
= 25
Avalanche energy, periodic limited by
I
= -8.8 A,
S
T
= 175 °C
jmax
V
= -48 , di/dt = 200 A/µs,
DS
Gate source voltage
Power dissipation
T
= 25 °C
C
Operating and storage temperature
W
T
jmax
I
D puls
E
AS
E
AR
dv/d
V
GS
P
tot
T
,
j
t
T
stg
-8.8
-6.2
-35.2
70 mJ
4.2
6Reverse diode dv/dt
±20 V
42 W
-55...+175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
kV/µs
Rev 1.2 Page 1
2005-02-11
Thermal Characteristics
Parameter Symbol UnitValues
min. max.typ.
Characteristics
SPP08P06P
R
thJC
Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
R
R
thJA
thJA
@ min. footprint
@ 6 cm2 cooling area
Electrical Characteristics, at
1)
T
= 25 °C, unless otherwise specified
j
- 3.6-Thermal resistance, junction - case K/W
- 62
-
-
-
-
62
40
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
Gate threshold voltage,
I
= -250 µA,
D
I
= -250 µA
D
T
= 25 °C
j
V
GS
=
V
DS
V
(BR)DSS
V
GS(th)
-60 - V-
-2.1 -3 -4
Zero gate voltage drain current
V
V
V
DS
DS
GS
= -60 V,
= -60 V,
= -20 V,
V
V
V
= 0 V,
GS
= 0 V,
GS
= 0 V
DS
T
= 25 °C
j
T
= 150 °C
j
Drain-source on-state resistance
V
= -10 V,
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.2 Page 2
I
= -6.2 A
D
I
DSS
I
GSS
R
DS(on)
-
-
-0.1
-10
-1
-100
- -10 -100Gate-source leakage current
- 0.23 0.3
2005-02-11
µA
nA
W
SPP08P06P
Electrical Characteristics, at
T
= 25 °C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
³
2*
I
*
DS
R
D
DS(on)max
,
I
D
= -6.2 A
Input capacitance
V
V
= 0 V,
GS
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
V
= -25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Turn-on delay time
V
R
DD
G
= 6
= -30 V,
W
V
GS
= -10 V,
I
D
= -6.2 A,
g
fs
C
iss
C
oss
C
rss
t
d(on)
1.5
- 135105Output capacitance
-
- 24 ns16
S-3.6
335 420 pF-
9565
Rise time
V
R
DD
G
= 6
= -30 V,
W
V
GS
= -10 V,
Turn-off delay time
V
R
DD
G
= 6
= -30 V,
W
V
GS
= -10 V,
Fall time
V
R
DD
G
= 6
= -30 V,
W
V
GS
= -10 V,
I
= -6.2 A,
D
I
= -6.2 A,
D
I
= -6.2 A,
D
t
r
t
d(off)
t
f
- 6946
-
48 72
- 14 21
Rev 1.2 Page 3
2005-02-11
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