SPP07N65C3, SPI07N65C3
)
p
jmax
A
jmax
A
j
g
SPA07N65C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package
P
SPP07N65C3
SPI07N65C3
SPA07N65C3 P
G-TO220
PG-TO262-3
G-TO220-3-31
Ordering Code
Q67040-S4624
Q67040-S4623
SP000216305
PG-TO220-3-31 PG-TO220PG-TO262-3-1
3
2
1
P-TO220-3-31
Marking
07N65C3
07N65C3
07N65C3
VDS 650 V
R
DS(on
I
D
0.6 Ω
7.3 A
2
-
-
-
3
2
1
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
= 100 °C
T
C
Pulsed drain current,
t
limited by
T
Avalanche energy, single pulse
ID=1.5A, VDD=50V
Avalanche energy, repetitive tAR limited by
I
=2.5A, VDD=50V
D
Avalanche current, repetitive t
limited by
R
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
T
T
jmax
2)
Symbol
I
D
I
Dpuls
E
AS
E
AR
I
R
V
GS
V
GS
P
tot
SPP_I
7.3
4.6
21.9
230
0.5
2.5
±20
±30
83
Value
SPA
7.3
4.6
21.9
230
0.5
2.5
±20
±30
32
Unit
A
1)
1)
A
mJ
A
V
W
Operating and storage temperature T
Page 1
,
T
st
-55...+150 °C
2007-08-30Rev. 1.8
Maximum Ratings
SPP07N65C3, SPI07N65C3
SPA07N65C3
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Symbol Values Unit
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature, wavesoldering
3)
T
1.6 mm (0.063 in.) from case for 10s
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
min. typ. max.
- - 1.5 K/W
- - 3.9
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA
VGS=0V, ID=2.5A - 730 -
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th)
DSS
GSS
DS(on)
G
ID=350µA, VGS=V
VDS=600V, VGS=0V,
T
=25°C
j
T
=150°C
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=4.6A
=25°C
T
j
T
=150°C
j
f=1MHz, open drain - 0.8 -
DS
min. typ. max.
650
- - V
2.1 3 3.9
-
-
-
-
0.5
-
0.54
1.46
1
100
0.6
-
µA
Ω
Page 2
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPA07N65C3
Parameter
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Symbol Conditions Values Unit
min. typ. max.
V
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
≥2*I
DS
D*RDS(on)max
=4.6A
I
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
=0V to 480V
V
DS
VDD=380V, VGS=0/13V,
=7.3A, RG=12Ω,
I
D
=125°C
T
j
,
- 6 - S
- 790 - pF
- 260 -
- 16 -
- 30 -
- 55 -
- 6 - ns
- 3.5 -
- 60 100
- 7 15
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
gs
gd
g
(plateau)
VDD=480V, ID=7.3A - 3 - nC
- 9.2 -
VDD=480V, ID=7.3A,
=0 to 10V
V
GS
VDD=480V, ID=7.3A - 5.5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 21 27
=EAR*f.
AV
DSS
DSS
.
.
Page 3
2007-08-30Rev. 1.8
Electrical Characteristics
SPP07N65C3, SPI07N65C3
SPA07N65C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
SPP_I SPA SPP_I SPA
min. typ. max.
TC=25°C - - 7.3 A
- - 21.9
VGS=0V, IF=I
VR=480V, IF=IS ,
di
/dt=100A/µs
F
S
- 1 1.2 V
- 400 600 ns
- 4 - µC
- 28 - A
Tj=25°C - 800 - A/µs
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.024 0.024 K/W C
0.046 0.046 C
0.085 0.085 C
0.308 0.195 C
0.317 0.45 C
0.112 2.511 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.00012 0.00012 Ws/K
0.0004578 0.0004578
0.000645 0.000645
0.001867 0.001867
0.004795 0.007558
0.045 0.412
External Heatsink
T
case
amb
Page 4
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
SPA07N65C3
1 Power dissipation
= f (TC)
P
tot
SPP07N65C3
100
W
80
70
tot
P
60
50
40
30
20
10
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
= f (TC)
P
tot
34
W
28
24
tot
P
20
16
12
8
4
160
T
C
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
= f ( VDS )
I
D
parameter : D = 0 ,
2
10
A
1
10
D
I
0
10
-1
10
-2
10
0
10
T
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
1
10
=25°C
10
4 Safe operating area FullPAK
= f (VDS)
I
D
parameter: D = 0,
2
10
A
1
10
D
I
0
10
-1
10
-2
2
V
3
10
V
DS
10
10
0
T
= 25°C
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
1
10
10
2
V
3
10
V
DS
Page 5
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
SPA07N65C3
5 Transient thermal impedance
= f (tp)
Z
thJC
parameter: D = t
1
10
K/W
0
10
thJC
Z
-1
10
-2
10
-3
10
-7
10
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
10
-5
10
-4
10
-3
6 Transient thermal impedance FullPAK
= f (tp)
Z
thJC
parameter: D =
1
10
K/W
0
10
thJC
Z
-1
10
-2
10
-3
-1
10
s
t
p
10
10-710-610-510-410-310-210
t
/t
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-1
1
10
s
t
p
7 Typ. output characteristic
= f (VDS); Tj=25°C
I
D
parameter: t
24
A
16
D
I
12
8
4
0
0 5 10 15
= 10 µs, V
p
20V
10V
8V
GS
8 Typ. output characteristic
= f (VDS); Tj=150°C
I
D
parameter: t
13
A
7V
6,5V
6V
5,5V
5V
4,5V
V
DS
25
V
11
10
9
D
I
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20 22 V25
= 10 µs, V
p
20V
8V
6.5V
GS
5.5V
5V
4.5V
4V
V
6V
DS
Page 6
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
SPA07N65C3
9 Typ. drain-source on resistance
R
DS(on)
parameter:
R
=f(ID)
T
=150°C, V
j
10
4V
Ω
8
7
DS(on)
6
5
4
3
2
1
0
0 2 4 6 8 10 12
4.5V
5V
GS
5.5V
6V
6.5V
8V
20V
A
I
D
15
10 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 4.6 A, VGS = 10 V
D
SPP07N65C3
3.4
Ω
2.8
2.4
DS(on)
2
1.6
1.2
0.8
0.4
0
-60 -20 20 60 100
98%
typ
°C
180
T
j
11 Typ. transfer characteristics
= f ( VGS ); V
I
D
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
24
A
20
18
16
D
I
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16
25°C
150°C
V
12 Typ. gate charge
V
= f (Q
GS
parameter: I
SPP07N65C3
16
V
12
GS
10
V
8
6
4
2
20
V
GS
0
0 4 8 12 16 20 24 28
)
Gate
= 7.3 A pulsed
D
V
0,2
DS max
0,8 V
DS max
nC
Q
34
Gate
Page 7
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
j
SPA07N65C3
13 Forward characteristics of body diode
= f (VSD)
I
F
parameter: T
2
SPP07N65C3
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
14 Typ. switching time
t = f (I
par.:
), inductive load, Tj=125°C
D
V
=380V, VGS=0/+13V, RG=12Ω
DS
90
ns
70
60
t
50
40
30
20
10
0
0 1 2 3 4 5 6
td(off)
tf
td(on)
tr
A
8
I
D
15 Typ. switching time
R
t = f (
par.:
t
), inductive load, Tj=125°C
G
V
=380V, VGS=0/+13V, ID=7.3 A
DS
500
ns
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100
td(on)
tf
tr
td(off)
16 Typ. drain current slope
di/dt = f(R
par.:
V
3000
A/µs
2000
di/dt
1500
1000
500
130
Ω
R
G
), inductive load, Tj = 125°C
G
=380V, VGS=0/+13V, ID=7.3A
DS
di/dt(on)
di/dt(off)
0
0 20 40 60 80 100
130
Ω
R
G
Page 8
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
SPA07N65C3
17 Typ. drain source voltage slope
dv/dt = f(R
par.:
V
100
V/ns
80
70
dv/dt
60
50
40
30
20
10
0
), inductive load, Tj = 125°C
G
=380V, VGS=0/+13V, ID=7.3A
DS
dv/dt(on)
dv/dt(off)
0 20 40 60 80
Ω
18 Typ. switching losses
E = f (I
par.:
mWs
E
120
R
G
), inductive load, Tj=125°C
D
V
=380V, VGS=0/+13V, RG=12Ω
DS
0.025
*) Eonincludes SDP06S60
diode commutation losses.
0.015
0.01
0.005
0
0 1 2 3 4 5 6
Eoff
Eon*
A
8
I
D
19 Typ. switching losses
R
E = f(
par.:
mWs
E
), inductive load, Tj=125°C
G
V
=380V, VGS=0/+13V,ID=11A
DS
0.2
*) Eon includes SDP06S60
diode commutation losses.
0.16
0.14
0.12
0.1
Eoff
0.08
0.06
0.04
0.02
0
0 20 40 60 80 100
Eon*
20 Avalanche SOA
= f (tAR)
I
AR
par.:
T
≤ 150 °C
j
8
A
T
6
AR
5
I
130
Ω
R
G
T
j(START)
4
3
2
1
0
10-310-210-110010110
=125°C
j(START)
=25°C
2
µs
t
AR
10
4
Page 9
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
SPA07N65C3
21 Avalanche energy
= f (Tj)
E
AS
par.: I
= 1.5 A, VDD = 50 V
D
260
mJ
220
200
180
AS
160
E
140
120
100
80
60
40
20
0
20 40 60 80 100 120
°C
22 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
160
T
j
= f (Tj)
SPP07N65C3
785
V
745
725
705
685
665
645
625
605
585
-60 -20 20 60 100
°C
180
T
j
23 Avalanche power losses
= f (f )
P
AR
parameter:
500
W
AR
P
300
200
100
E
=0.5mJ
AR
0
10
4
10
5
MHz
24 Typ. capacitances
V
C = f (
parameter:
10
pF
10
C
10
10
6
10
f
10
)
DS
V
=0V, f=1 MHz
GS
4
C
3
2
1
C
rss
0
0 100 200 300 400
iss
C
oss
V
600
V
DS
Page 10
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
SPA07N65C3
25 Typ. C
=f(VDS)
E
oss
5.5
µJ
4.5
4
oss
3.5
E
3
2.5
2
1.5
1
0.5
0
0 100 200 300 400
stored energy
oss
V
600
V
DS
Definition of diodes switching characteristics
Page 11
2007-08-30Rev. 1.8
PG-TO220-3-1, PG-TO220-3-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Page 12
2007-08-30Rev. 1.8
PG-TO-220-3-31 (FullPAK)
SPP07N65C3, SPI07N65C3
SPA07N65C3
Page 13
2007-08-30Rev. 1.8
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
SPP07N65C3, SPI07N65C3
SPA07N65C3
Page 14
2007-08-30Rev. 1.8
SPP07N65C3, SPI07N65C3
SPA07N65C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 15
2007-08-30Rev. 1.8
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