INFINEON SPN03N60C3 User Manual
SPN03N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
Type Package Ordering Code
SPN03N60C3 SOT-223 Q67040S4552
VDS @ T
Marking
03N60C3
R
DS(on)
I
jmax
650 V
1.4 Ω
D
0.7 A
SOT-223
4
3
2
1
VPS05163
Maximum Ratings
Parameter
Continuous drain current
= 25 °C
T
A
T
= 70 °C
A
Pulsed drain current, tp limited by T
T
= 25 °C
A
jmax
Avalanche current, repetitive tAR limited by T
jmaxIAR
Symbol Value Unit
I
I
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
A
V
Operating and storage temperature T
D
D puls
GS
GS
tot
T
,
j
stg
0.7
0.4
3
3.2
±20
±30
1.8 W
-55... +150
A
V
°C
Rev. 2.1 Page 1
2005-02-21
Maximum Ratings
SPN03N60C3
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - soldering point R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
1)
thJS
thJA
- 25 - K/W
-
-
110
-
-
70
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=3.2A - 700 -
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th)
DSS
GSS
DS(on)
G
ID=135µΑ, VGS=V
VDS=600V, VGS=0V,
T
=25°C,
j
=150°C
T
j
VGS=30V, VDS=0V - - 100 nA
VGS=10V, ID=2A,
T
=25°C
j
=150°C
T
j
f=1MHz, open Drain - 10 -
2.1 3 3.9
DS
-
-
-
-
0.5
-
1.26
3.8
1
70
1.4
-
µA
Ω
Rev. 2.1 Page 2
2005-02-21
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPN03N60C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
2)
C
energy related
Effective output capacitance,
3)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
VDS≥2*I
I
D
V
f=1MHz
V
V
V
I
D
D*RDS(on)max
=0.4A
=0V, VDS=25V,
GS
=0V,
GS
=0V to 480V
DS
=350V, VGS=0/10V,
DD
=0.7A, RG=20Ω
min. typ. max.
,
- 3.4 - S
- 400 - pF
- 150 -
- 5 -
- 12 - pF
- 26 -
- 7 - ns
- 3 -
- 64 100
- 12 20
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
C
is a fixed capacitance that gives the same stored energy as C
o(er)
3
C
is a fixed capacitance that gives the same charging time as C
o(tr)
gs
gd
g
(plateau)
V
=420V, ID=0.7A - 2 - nC
DD
- 6 -
V
=420V, ID=0.7A,
DD
V
=0 to 10V
GS
V
=420V, ID=0.7A - 5.5 - V
DD
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 13 17
DSS
DSS
.
.
Rev. 2.1 Page 3
2005-02-21
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPN03N60C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
recovery current
S
SM
SD
rr
rr
rrm
min. typ. max.
T
=25°C - - 0.7 A
A
- - 3
VGS=0V, IF=IS - 1 1.2 V
VR=420V, IF=IS ,
/dt=100A/µs
di
F
- 250 400 ns
- 1.8 - µC
- 15 - A
- - 540 A/µs
Rev. 2.1 Page 4
2005-02-21
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